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Power - Tetrode (NOT beam) (over 1000V 100W) ·Tetrode

TT16D

Marconi VHF power tetrode designed for RF amplifier, modulator, and audio-frequency power-amplifier service. Its versatile output construction supports both radio and low-frequency power applications.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
-

Description

The TT16D is a VHF power tetrode for RF amplifier, modulator, and audio-frequency power-amplifier service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
-
Nominal heater current
-
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.0222 S
Max plate voltage
3000 V
Max screen voltage
600 V
Max plate dissipation
125 W
Max screen dissipation
20 W

Published maximum ratings and characteristics audited; remaining useful numerical data retained in parameter table.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1955 Marconi

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

  • General. The TT

    16 W

    General. The TT 16D is a power tetrode fitted with a

  • thoriated tungsten filament. The valve may be —-‘

    9

    thoriated tungsten filament. The valve may be —-‘ 9 I——-

  • ( [1]

    1 W

    (1) RF POWER AMPLIFIER Pa 112 120 122 w

  • ( [2]

    112 W

    (1) RF POWER AMPLIFIER Pa 112 120 122 w

  • ( [3]

    120 W

    (1) RF POWER AMPLIFIER Pa 112 120 122 w

  • ( [4]

    122 W

    (1) RF POWER AMPLIFIER Pa 112 120 122 w

  • (

    3 W

    (3) RF POWER AMPLIFIER CLASS C

  • ( [1]

    2 W

    (2) RF POWER AMPLIFIER CLASS B Par 20 1-7 w

  • ( [2]

    20 W

    (2) RF POWER AMPLIFIER CLASS B Par 20 1-7 w

  • ( [3]

    1 W

    (2) RF POWER AMPLIFIER CLASS B Par 20 1-7 w

  • ( [4]

    -7 W

    (2) RF POWER AMPLIFIER CLASS B Par 20 1-7 w

  • (

    4 W

    (4) AF POWER AMPLIFIER OR MODULATOR

  • Published value

    1

    1. The RF circuit returns must be brought to the filament

  • Pa [1]

    2 A

    Pa 2x78 2x%92 2x95 2. To ensure equal distribution of the currents through the

  • Pa [2]

    8 A

    Pa 2x78 2x%92 2x95 2. To ensure equal distribution of the currents through the

  • Pa [3]

    2 A

    Pa 2x78 2x%92 2x95 2. To ensure equal distribution of the currents through the

  • Pa [4]

    92 A

    Pa 2x78 2x%92 2x95 2. To ensure equal distribution of the currents through the

  • Pa [5]

    2 A

    Pa 2x78 2x%92 2x95 2. To ensure equal distribution of the currents through the

  • Pa [6]

    5 A

    Pa 2x78 2x%92 2x95 2. To ensure equal distribution of the currents through the

  • Pa [7]

    2 A

    Pa 2x78 2x%92 2x95 2. To ensure equal distribution of the currents through the

  • (a) Corresponding to anode temperature of

    850

    (a) Corresponding to anode temperature of 850°C, i.e. red heat.

  • Diot [1]

    35

    Diot 35 3-6 40 %o (b) With a circuit transfer efficiency of 80%.

  • Diot [2]

    3

    Diot 35 3-6 40 %o (b) With a circuit transfer efficiency of 80%.

  • Diot [3]

    -6

    Diot 35 3-6 40 %o (b) With a circuit transfer efficiency of 80%.

  • Diot [4]

    40

    Diot 35 3-6 40 %o (b) With a circuit transfer efficiency of 80%.

  • Diot [5]

    80

    Diot 35 3-6 40 %o (b) With a circuit transfer efficiency of 80%.