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Power - Tetrode Single (NOT beam) (under 10W) ·Tetrode

QQV0415

VHF power double tetrode designed for RF amplifier and oscillator service to approximately 250 MHz. Its paired sections support compact transmitter output circuits.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
6.3 V / 1.6 A

Description

VHF power double tetrode for RF amplifier and oscillator service to 250 MHz.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
6.3 V
Nominal heater current
1.6 A
Parallel heater voltage
6.3 V
Parallel heater current
1.6 A
Series capable
Yes

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.003 S
Max plate voltage
750 V
Max screen voltage
250 V
Max plate dissipation
7.5 W
Max cathode current
55 mA

Two electrically similar RF tetrode sections; represented once under identical-section compression.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

  • Maximum operating frequency

    250 MHz

  • RF operating frequency

    200 MHz

    ClassC

  • RF plate voltage

    500 V

    ClassC

  • RF screen voltage

    200 V

    ClassC

  • RF control-grid voltage

    -65 V

    ClassC

  • RF plate current per section

    36 mA

    ClassC

  • RF output power

    26 W

    ClassC

  • RF operating frequency

    250 MHz

    ClassC

  • RF plate voltage

    500 V

    ClassC

  • RF screen voltage

    200 V

    ClassC

  • RF control-grid voltage

    -65 V

    ClassC

  • RF plate current per section

    32 mA

    ClassC

  • RF output power

    18 W

    ClassC

  • RF operating frequency

    200 MHz

    ClassC,Modulated

  • RF plate voltage

    600 V

    ClassC,Modulated

  • RF screen voltage

    200 V

    ClassC,Modulated

  • RF control-grid voltage

    -65 V

    ClassC,Modulated

  • RF plate current per section

    18 mA

    ClassC,Modulated

  • RF output power

    17 W

    ClassC,Modulated

  • Maximum anode dissipation per section

    7.5 W

  • Heater-cathode voltage maximum

    100 V

Capacitance

  • Plate-grid capacitance per section

    0.07 pF

  • Push-pull input capacitance

    8 pF

    PushPull

  • Push-pull output capacitance

    3.8 pF

    PushPull

Characteristics

  • Transconductance

    3 mA/V

  • Grid1-to-grid2 amplification factor

    6.5

Application

  • Application

    RF power amplifier / oscillator / frequency multiplier