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Power - Tetrode (NOT beam) (over 1000V 100W) ·Tetrode

QB52000

Transmitting power tetrode designed for RF amplification, linear/SSB service, oscillation, modulation, broadcasting, or frequency multiplication.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
GIANT 5P
Socket code
-
Base pins
-
Nominal heater
7.5 V / 22.6 A

Description

Directly heated power tetrode for AM and single-sideband amplifier service. The supplied Philips source was read for heater or filament data, capacitances, limiting ratings, and representative RF/television operating conditions, with variant-sheet cross-references preserved.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
GIANT 5P
Socket code
-
Base pins
-
Nominal heater voltage
7.5 V
Nominal heater current
22.6 A
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

GIANT 5P - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.01 S
Amplification factor
6.1
Max plate voltage
5500 V
Max screen voltage
800 V
Max plate dissipation
800 W
Max screen dissipation
120 W
Max cathode current
700 mA

Published transmitting-tube ratings and principal characteristics promoted; additional RF operating points retained as parameters.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Characteristics

  • Heater/filament voltage

    7.5 V

  • Heater/filament current

    22.6 A

  • Transconductance

    10000 uS

  • Screen-grid amplification factor

    6.1

  • Typical plate voltage

    4000 V

  • Typical screen-grid voltage

    600 V

  • Typical plate current

    200 mA

Other

  • Maximum plate/anode voltage

    5500 V

  • Maximum screen-grid voltage

    800 V

  • Maximum plate/anode dissipation

    800 W

  • Maximum screen-grid dissipation

    120 W

  • Operating plate voltage

    5000 V

    ClassC;Telegraphy;30MHz

  • RF output power

    2400 W

    ClassC;Telegraphy;30MHz

  • Maximum anode input power

    3500 W

    ClassC

Capacitance

  • Plate/anode capacitance

    9.5 pF

  • Control-grid capacitance

    47.6 pF

  • Plate-grid capacitance

    0.1 pF