QB51750

Transmitting power tetrode designed for RF amplification, linear/SSB service, oscillation, modulation, broadcasting, or frequency multiplication.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 10 V / 9.9 A

Description

Transmitting tetrode for RF amplifier, frequency-multiplier, and modulator service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 10 V
Nominal heater current: 9.9 A
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances

Transconductance: 0.007 S
Amplification factor: 9.5
Max plate voltage: 5000 V
Max screen voltage: 700 V
Max plate dissipation: 500 W
Max screen dissipation: 65 W
Max cathode current: 450 mA

Promoted where the locked schema directly matches published RF values; frequency/service-specific limits and operating conditions are retained as parameter rows.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V4

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

Maximum plate voltage
5000 V
RFPowerTube
Maximum screen voltage
700 V
RFPowerTube
Application
Transmitting tetrode for RF amplifier, frequency-multiplier, and modulator service.
SourceDescription
Service category
RF/AF power service as specified in source
RFPowerTube
Heater/filament voltage
10 V
RFPowerTube
Heater/filament current
9.9 A
RFPowerTube
Operating frequency
60 MHz
RFPowerAmplifier
Plate voltage
5000 V
RFPowerAmplifier
Power output
1760 W
RFPowerAmplifier
Maximum frequency
110 MHz
RFPowerAmplifier

Construction

Heating method
Direct
RFPowerTube
Device class
Tetrode
RFPowerTube

Characteristic

Transconductance
7000 µS
RFPowerTube
Screen-to-control-grid amplification factor
9.5
RFPowerTube

Capacitance

Plate capacitance
8.3 pF
RFPowerTube
Control-grid capacitance
24 pF
RFPowerTube

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Characteristics

Heater/filament voltage
10 V
Heater/filament current
9.9 A
Transconductance
7000 uS
Screen-grid amplification factor
9.5
Typical plate-current reference
120 mA

Other

Maximum plate/anode voltage
5000 V
Maximum screen-grid voltage
700 V
Maximum plate/anode dissipation
500 W
Maximum screen-grid dissipation
65 W
Operating plate voltage
5000 V
ClassC;Telegraphy;60MHz
RF output power
1760 W
ClassC;Telegraphy;60MHz
Operating plate voltage
4000 V
ClassC;Telegraphy;60MHz
RF output power
1410 W
ClassC;Telegraphy;60MHz
Maximum anode input power
2250 W
HigherPowerCase

Capacitance

Plate/anode capacitance
8.3 pF
Control-grid capacitance
24 pF
Plate-grid capacitance
0.25 pF