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Power - Tetrode (NOT beam) (over 1000V 100W) ·Tetrode

GU73B

High-transconductance Soviet tetrode for single-sideband RF power amplification to approximately 250 MHz.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
27 V / -

Description

The GU-73B tetrode is used for single-sideband power amplification at frequencies up to 250 MHz. It has an indirectly heated oxide-coated cathode, metal-ceramic envelope, and forced-air cooling.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
27 V
Nominal heater current
-
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.065 S
Amplification factor
37
Max plate voltage
3000 V
Max screen voltage
325 V
Max plate dissipation
2500 W
Max screen dissipation
35 W
Max grid dissipation
5 W
Max cathode current
2.2 A

Promoted-field audit performed from English ratings/characteristics; detailed electrical values retained in parameter table. REDO promoted-field audit completed from English Limit Operating Values / Electrical Parameters tables.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1968 Electronintorg

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

  • power [1]

    736 W

    ["eHepartopHbin TeTpog I'Y-736 npeaHasHayeH ana The I'Y-73b tetrode is used for single-sideband power

  • power [2]

    73 W

    ["eHepartopHbin TeTpog I'Y-736 npeaHasHayeH ana The I'Y-73b tetrode is used for single-sideband power

  • YCUMEHUs1 MOLHOCTM OAHOMOMNOCHOrO CurHana Ha [1]

    4

    YCUMEHUs1 MOLHOCTM OAHOMOMNOCHOrO CurHana Ha 4a- amplification at frequencies up to 250 MHz.

  • YCUMEHUs1 MOLHOCTM OAHOMOMNOCHOrO CurHana Ha [2]

    250

    YCUMEHUs1 MOLHOCTM OAHOMOMNOCHOrO CurHana Ha 4a- amplification at frequencies up to 250 MHz.

  • anode; / - contact surfaces [1]

    71

    K — cathode; /71— heater; C1 — grid 1, C2 — grid 2; A — anode; / - contact surfaces

  • anode; / - contact surfaces [2]

    1

    K — cathode; /71— heater; C1 — grid 1, C2 — grid 2; A — anode; / - contact surfaces

  • anode; / - contact surfaces [3]

    2

    K — cathode; /71— heater; C1 — grid 1, C2 — grid 2; A — anode; / - contact surfaces

  • temperature, °C ... .... ... — [1]

    88 C

    JIMHERHDBI® . . .o v it ettt e e 88 Lowest permissible ambient temperature, °C ... .... ... —-60

  • temperature, °C ... .... ... — [2]

    -60 C

    JIMHERHDBI® . . .o v it ettt e e 88 Lowest permissible ambient temperature, °C ... .... ... —-60

  • voltage (ACorDC),V

    27 V

    Hanpsxenue Hakana (~wim =),B .............. 27 Heater voltage (ACorDC),V ...................

  • voltage, V [1]

    250 V

    e 250 Negative grid 1 bias voltage, V . .................

  • voltage, V [2]

    1 V

    e 250 Negative grid 1 bias voltage, V . .................

  • voltage, V,atmost

    1840 V

    CMELLEHUA CETKUNEPBOMA . . ................. MuHyc 1840 Negative cutoff voltage, V,atmost ... ............

  • Mutual conductance, mA/V, atleast

    -130 mA/V

    TOK CeTKM BTOPOR, MA . . .. .. .. ..., —130 Mutual conductance, mA/V, atleast ..............

  • grid2) [1]

    65

    KpyTusHa xapakTepucTuku, MA/B, He meHee . ... .. 65 Gain coefficient (grid 1 grid2) ...................

  • grid2) [2]

    1

    KpyTusHa xapakTepucTuku, MA/B, He meHee . ... .. 65 Gain coefficient (grid 1 grid2) ...................

  • Voltage level of combination frequencies of third

    0 V

    KoadhduumeHT ycuneHus ceTku nepeoi 0THOCUTENb- Voltage level of combination frequencies of third

  • grid [1]

    37 kV

    HOCETKMBTOPOM ... .v.oiiniinnnnnanennnnnnns 37 and fifth orders (at anode voltage 3 kV, grid 2

  • grid [2]

    3 kV

    HOCETKMBTOPOM ... .v.oiiniinnnnnanennnnnnns 37 and fifth orders (at anode voltage 3 kV, grid 2

  • grid [3]

    2 kV

    HOCETKMBTOPOM ... .v.oiiniinnnnnanennnnnnns 37 and fifth orders (at anode voltage 3 kV, grid 2

  • current [1]

    300 mA

    YpoBeHb HanpsHKeHUin KOMOMHALUOHHBIX HacToT voltage 300 V, anode current 750 mA, grid 2 current

  • current [2]

    750 mA

    YpoBeHb HanpsHKeHUin KOMOMHALUOHHBIX HacToT voltage 300 V, anode current 750 mA, grid 2 current

  • current [3]

    2 mA

    YpoBeHb HanpsHKeHUin KOMOMHALUOHHBIX HacToT voltage 300 V, anode current 750 mA, grid 2 current

  • aHopaa [1]

    3 s

    aHopaa 3 kB, Hanpsixenuun ceTku BTopow 300 B, Warm up time,s,atmost ......................

  • aHopaa [2]

    300 s

    aHopaa 3 kB, Hanpsixenuun ceTku BTopow 300 B, Warm up time,s,atmost ......................

  • power under conditions of class AB [1]

    750 W

    Toke aHoaa 750 MA, Toke ceTku BTOpon He 6onee Oscillatory power under conditions of class AB;

  • power under conditions of class AB [2]

    6 W

    Toke aHoaa 750 MA, Toke ceTku BTOpon He 6onee Oscillatory power under conditions of class AB;

  • anode [1]

    -30 kV

    . —-30 (atanode voltage 3 kV, grid 2 voltage 300 V, anode

  • anode [2]

    3 kV

    . —-30 (atanode voltage 3 kV, grid 2 voltage 300 V, anode

  • anode [3]

    2 kV

    . —-30 (atanode voltage 3 kV, grid 2 voltage 300 V, anode

  • anode [4]

    300 kV

    . —-30 (atanode voltage 3 kV, grid 2 voltage 300 V, anode

  • current at most [1]

    6 mA

    Bpems roToBHOCTH, C, HE 6Onee ... ............. 210 current 750 mA, grid 2 current at most 110 mA),

  • current at most [2]

    210 mA

    Bpems roToBHOCTH, C, HE 6Onee ... ............. 210 current 750 mA, grid 2 current at most 110 mA),

  • current at most [3]

    750 mA

    Bpems roToBHOCTH, C, HE 6Onee ... ............. 210 current 750 mA, grid 2 current at most 110 mA),

  • current at most [4]

    2 mA

    Bpems roToBHOCTH, C, HE 6Onee ... ............. 210 current 750 mA, grid 2 current at most 110 mA),

  • current at most [5]

    110 mA

    Bpems roToBHOCTH, C, HE 6Onee ... ............. 210 current 750 mA, grid 2 current at most 110 mA),

  • Interelectrode capacitance, pF

    3 pF

    (npv HanpsxxeHun aHoaa 3 KB, HaNpsiXKeHnn ceTku Interelectrode capacitance, pF:

  • input [1]

    300

    BTOpoK 300 B, Toke aHoga 750 MA, TOKe ceTku input ... 190

  • input [2]

    750

    BTOpoK 300 B, Toke aHoga 750 MA, TOKe ceTku input ... 190

  • input [3]

    190

    BTOpoK 300 B, Toke aHoga 750 MA, TOKe ceTku input ... 190

  • output [1]

    6

    B8TOpOW He 6onee 110 MA), kBT, He meHee . .... ... 2,5 output .. ...

  • output [2]

    110

    B8TOpOW He 6onee 110 MA), kBT, He meHee . .... ... 2,5 output .. ...

  • output [3]

    25

    B8TOpOW He 6onee 110 MA), kBT, He meHee . .... ... 2,5 output .. ...

  • voltage, V [1]

    325 V

    CETKMN BTOPOM, MOCTOAHHOE . ... ............. 325 Negativegrid 1 voltage, V... .................... 150

  • voltage, V [2]

    1 V

    CETKMN BTOPOM, MOCTOAHHOE . ... ............. 325 Negativegrid 1 voltage, V... .................... 150

  • voltage, V [3]

    150 V

    CETKMN BTOPOM, MOCTOAHHOE . ... ............. 325 Negativegrid 1 voltage, V... .................... 150

  • dissipation, kW

    150 kW

    oTpULaTeNibHOe CeTKU NEPBON . . . . .. ... ... ... 150 Anode dissipation, kW:

  • PaccenBaemas Han6onbLIAA MOWHOCTb single-sideband signal amplification

    25

    PaccenBaemas Han6onbLIAA MOWHOCTb single-sideband signal amplification ........... 25

  • aHoAoM, kKBT: TV signal amplification

    3.5

    aHoAoM, kKBT: TV signal amplification ..................... 3.5

  • dissipation, W [1]

    4 W

    npyu yCUneHn 04HOMONOCHOTO Grid 2 dissipation, W . ............. .. ... .. ...

  • dissipation, W [2]

    2 W

    npyu yCUneHn 04HOMONOCHOTO Grid 2 dissipation, W . ............. .. ... .. ...

  • dissipation, W [1]

    2 W

    [ = T 2T 2,5 Grid 1 dissipation, W .........................

  • dissipation, W [2]

    25 W

    [ = T 2T 2,5 Grid 1 dissipation, W .........................

  • dissipation, W [3]

    1 W

    [ = T 2T 2,5 Grid 1 dissipation, W .........................

  • current (DC component), A

    2.2 A

    Npy YCUNEeHUM TEeNeBU3NOHHOIO Cathode current (DC component), A ............. 2.2

  • current (instantaneous value), A

    3.5 mA

    CUTHAMA . . ..ottt i e e e e e 3.5 Anode current (instantaneous value), A ...........

  • frequency, MHz

    250 MHz

    PaccenBaemas Han6onbLUasA MOLWHOCTD, BT: Operating frequency, MHz ..................... 250

  • anode, stem and seals,°C [1]

    35 C

    CETKOMBTOPOM ... .oviiienieiieie e 35 Temperature at anode, stem and seals,°C ........ 200

  • anode, stem and seals,°C [2]

    200 C

    CETKOMBTOPOM ... .oviiienieiieie e 35 Temperature at anode, stem and seals,°C ........ 200