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Voltage Pentode - Sharp Cutoff (single) ·Pentode

EF95

Sharp-cutoff pentode designed for RF or IF amplification in high-frequency wide-band applications to approximately 400 MHz. Its compact construction provides fixed-gain broadband signal performance.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
7BD
Socket code
B7G
Base pins
7
Nominal heater
6.3 V / 175 mA

Description

Sharp-cutoff pentode used as an RF or IF amplifier in high-frequency wide-band applications up to about 400 MHz.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
7BD
Socket code
B7G
Base pins
7
Nominal heater voltage
6.3 V
Nominal heater current
175 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

7BD - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1G1AG1 — Control Grid

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN2G3AG3 — Suppressor GridGroup 7BD2

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN2ISAIS — Internal ScreenGroup 7BD2

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN2KAK — CathodeGroup 7BD2

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN3H—H — Heater

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN4H—H — Heater

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN5PAP — Plate (Anode)

EIA chart transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN6G2AG2 — Screen Grid

EIA chart transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN7G3AG3 — Suppressor GridGroup 7BD7

EIA chart transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN7ISAIS — Internal ScreenGroup 7BD7

EIA chart transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

PIN7KAK — CathodeGroup 7BD7

EIA chart transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 128, 7BD

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
250000 Ω
Transconductance
0.0052 S
Max plate voltage
180 V
Max screen voltage
180 V
Max plate dissipation
1.7 W
Max screen dissipation
0.5 W
Max cathode current
18 mA

Promoted ratings and characteristics are taken from the printed target-tube entry in the approved PDF.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X Tesla

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    175 mA

    Nominal

  • Maximum Plate Voltage

    180 V

  • Maximum Screen Voltage

    180 V

  • Maximum Plate Dissipation

    1.8 W

Characteristic

  • Transconductance

    5000 µS

    Typical

Data set 02

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Input capacitance

    4 pF

    Pentode; shielded

  • Output capacitance

    3.1 pF

    Pentode; shielded

Characteristic

  • Anode current

    7.7 mA

    Va=180V; Vg2=120V

  • Screen current

    2.4 mA

    Va=180V; Vg2=120V

  • Triode transconductance

    6800 uS

    TriodeConnection

  • Triode plate resistance

    5200 ohm

    TriodeConnection

  • Triode amplification factor

    35

    TriodeConnection

Data set 03

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Heater voltage

    6.3 V

    Published heater rating

  • Heater current

    175 mA

    Published heater rating

  • Transconductance

    5000 µS

    RFAmplifier

Other

  • Plate voltage

    120 V

    RFAmplifier

  • Screen voltage

    120 V

    RFAmplifier

Data set 04

1967 Mullard Receiving and Amplifying Valves

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • ( in 4.0

    4 pF

    Published in approved EF95 target datasheet entry; Section1

  • Cout 2.2

    3.1 pF

    Published in approved EF95 target datasheet entry; Section1

  • ( a - g'! 23 <

    0.02 pF

    Published in approved EF95 target datasheet entry; Section1

  • Ch- k 2

    2 pF

    Published in approved EF95 target datasheet entry; Section1

  • Cin 2.7

    2.8 pF

    Published in approved EF95 target datasheet entry; Section1

  • Cou t 4.2

    5.1 pF

    Published in approved EF95 target datasheet entry; Section1

  • ( ( a- g 1.4

    1.4 pF

    Published in approved EF95 target datasheet entry; Section1

  • gm 5.0

    5.1 mA

    Published in approved EF95 target datasheet entry; Section1

  • Pg2 max

    500 mW

    Published in approved EF95 target datasheet entry; Section1

  • T h ul h max

    170 °C

    Published in approved EF95 target datasheet entry; Section1

Data set 05

1969 Tesla Manual of Electronic Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    175 mA

    Published nominal value

  • Transconductance

    5100 µS

    Published operating characteristic

Other

  • Maximum plate dissipation

    1.7 W

    Published maximum rating

Data set 06

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • 100 /iA

    -5.4 V

    Published in approved EF95 target datasheet entry; Section1

  • For fixed-bias operation 0.5

    0.1 MΩ

    Published in approved EF95 target datasheet entry; Section1

  • For cathode-bias operation 1

    0.25 MΩ

    Published in approved EF95 target datasheet entry; Section1

  • 7BD cies up to

    400 MHz

    Published in approved EF95 target datasheet entry; Section1

  • Heater Voltage (ac/dc)

    6.3 V

    Published in approved EF95 target datasheet entry; Section1

  • Heater Current

    175 mA

    Published in approved EF95 target datasheet entry; Section1

  • Plate Voltage

    180 V

    Published in approved EF95 target datasheet entry; Section1

  • Grid-No.2 Supply Voltage

    180 V

    Published in approved EF95 target datasheet entry; Section1

  • Grid-No.l Voltage, Positive-bias value

    0 V

    Published in approved EF95 target datasheet entry; Section1

  • Plate Dissipation

    1.7 W

    Published in approved EF95 target datasheet entry; Section1

  • For grid-No. 2 voltages up to

    90 V

    Published in approved EF95 target datasheet entry; Section1

  • For grid-No. 2 voltages up to 90 volts

    0.5 W

    Published in approved EF95 target datasheet entry; Section1

  • For grid-No.2 voltages between 90 and

    180 V

    Published in approved EF95 target datasheet entry; Section1

  • Cathode Current

    18 mA

    Published in approved EF95 target datasheet entry; Section1

  • Grid-No.2 Supply Voltage 120

    120 V

    Published in approved EF95 target datasheet entry; Section1

  • Heater Voltage (ae/de)

    6.3 V

    Published in approved EF95 target datasheet entry; Section1

  • Heater Current

    160 mA

    Published in approved EF95 target datasheet entry; Section1

  • Plate Voltage

    300 V

    Published in approved EF95 target datasheet entry; Section1

  • Screen Voltage (Grid No. 2)

    260 V

    Published in approved EF95 target datasheet entry; Section1

  • Plate Dissipation

    2.75 W

    Published in approved EF95 target datasheet entry; Section1

  • Screen Dissipation

    0.75 W

    Published in approved EF95 target datasheet entry; Section1

  • Screen Voltage

    180 V

    Published in approved EF95 target datasheet entry; Section1

  • Grid Voltage (Grid No. 1)

    -9 V

    Published in approved EF95 target datasheet entry; Section1

  • Peak A-F Grid Voltage

    9 V

    Published in approved EF95 target datasheet entry; Section1

  • Zero-Signal Plate Current

    15 mA

    Published in approved EF95 target datasheet entry; Section1

  • Transconductance

    2300 µS

    Published in approved EF95 target datasheet entry; Section1

  • Load Resistance

    10000 Ω

    Published in approved EF95 target datasheet entry; Section1

  • Max.-Sig. Power Output

    1.1 W

    Published in approved EF95 target datasheet entry; Section1

  • For fixed-bias operation

    0.1 MΩ

    Published in approved EF95 target datasheet entry; Section1

  • For cathode-bias operation

    0.5 MΩ

    Published in approved EF95 target datasheet entry; Section1

Capacitance

  • Internal Shield

    4 pF

    Published in approved EF95 target datasheet entry; Section1

  • Internal Shield

    2.8 pF

    Published in approved EF95 target datasheet entry; Section1

  • Grid to Plate

    0.12 pF

    Published in approved EF95 target datasheet entry; Section1

  • Output

    4.2 pF

    Published in approved EF95 target datasheet entry; Section1

Characteristic

  • Cathode- Bias Resistor 180

    180 Ω

    Published in approved EF95 target datasheet entry; Section1

  • Plate Resistance tApprox.) 0.3

    0.5 MΩ

    Published in approved EF95 target datasheet entry; Section1

  • Transconductanee 5000

    5100 µS

    Published in approved EF95 target datasheet entry; Section1

  • Plate Current 7.5

    7.7 mA

    Published in approved EF95 target datasheet entry; Section1

  • Grid-No. 2 Current 2.5

    2.4 mA

    Published in approved EF95 target datasheet entry; Section1

  • Grid-No. 1 Voltage for plate current of 10 pA —8.5

    -8.6 V

    Published in approved EF95 target datasheet entry; Section1

Data set 07

1981 Russian Tubes Katsnelson and Larionov

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Heater voltage

    6.3 V

    Published nominal/basic-parameter heater condition.

  • Heater current

    175 mA

    Published heater current.

  • Plate current

    7.5 mA

    Published basic-parameter operating point.

  • Screen current

    3.5 mA

    Published basic-parameter operating point.

  • Transconductance

    5200 µS

    Published basic-parameter value; normalized to µS.

  • Plate resistance

    250000 Ω

    Published internal/plate resistance.

  • Input capacitance

    4.5 pF

    Published in the filename-designated tube entry.

  • Output capacitance

    2.8 pF

    Published in the filename-designated tube entry.

  • Grid-to-plate capacitance

    0.025 pF

    Published in the filename-designated tube entry.

Other

  • Maximum plate voltage

    200 V

    Published limiting operating value.

  • Maximum screen voltage

    150 V

    Published limiting operating value.

  • Maximum cathode current

    18 mA

    Published limiting cathode-current value.

  • Maximum plate dissipation

    1.7 W

    Published limiting plate-dissipation value.

  • Maximum screen dissipation

    0.5 W

    Published limiting screen-dissipation value.

Data set 08

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater voltage

    6.3 V

    Heating

  • Heater current

    175 mA

    Heating

Characteristic

  • Plate resistance

    340000 Ω

    Promoted published datasheet value

  • Transconductance

    9000 µS

    Promoted published datasheet value

  • Cnauffage: 1ndirect par C.A. ou C.C.; Vg =

    6.3 V

    Published datasheet value

  • b i Ca =

    2.8 pF

    Published datasheet value

  • Abschirmung) Cgi =

    4 pF

    Published datasheet value

  • Ia = 1,5

    7.7 ma

    Published datasheet value

  • Ig2 = 2,5

    2.4 ma

    Published datasheet value