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Voltage Triode Pentode ·Pentode-Triode

ECF80

Triode-pentode combination for receiver and amplifier service; available source material does not establish a narrower functional role confidently.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
9C12
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 430 mA

Description

Triode-pentode for VHF oscillator and frequency-converter service.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9C12
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
430 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9C12 - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
4000000 Ω
Transconductance
0.0065 S
Amplification factor
47
Max plate voltage
250 V
Max screen voltage
175 V
Max plate dissipation
1.7 W
Max screen dissipation
0.5 W
Max cathode current
14 mA

Pentode section; values semantically promoted from published characteristics/maximum-ratings tables where present.

Section 2

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
4000 Ω
Transconductance
0.005 S
Amplification factor
50
Max plate voltage
250 V
Max plate dissipation
1.5 W
Max cathode current
14 mA

Triode section; values semantically promoted from published characteristics/maximum-ratings tables where present.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1953 La Radiotechnique

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Indirect (cathodes isolees du filament)

    63 V

    Pentode

  • Alimentatlon du filament en parallele. { F

    145 A

    Pentode

Other

  • Tension de l'anode

    170 V

    Pentode

  • Tension de la grille 2

    170 V

    Pentode

  • Tension de la grille 1

    -2 V

    Pentode

  • Courant anodique

    10 mA

    Pentode

  • Courant de la grille 2

    28 mA

    Pentode

  • Resistance interne

    4 Mohm

    Pentode

  • Capacite de la grille 1

    55 pF

    Pentode

  • Capacite de l'anode

    38 pF

    Pentode

  • Capacite anode-grille 1

    0.025 pF

    Pentode

  • Resistance du circuit de la grille 1 Rg

    0.1 Mohm

    Pentode

  • Resistance de polarisation

    820 ohm

    Pentode

  • Tension eff. d'oscillation (grille 1). V osc

    3.5 V

    Pentode

  • Courant anodique

    5.2 mA

    Pentode

  • Courant de la grille 2

    1.5 mA

    Pentode

  • Pente de conversion

    2.1 mA/V

    Pentode

SECTION 2

Triode

Other

  • Tension de l'anode

    100 V

    Triode

  • Tension de la grille

    2 V

    Triode

  • Courant anodique

    14 mA

    Triode

  • Resistance interne

    4 kohm

    Triode

  • Pente

    5 mA/V

    Triode

  • 82140 %Ë ZZkQËÈ

    82140 %

    Triode

Capacitance

  • Capacite de la grille

    25 pF

    Triode

  • Capacite anode-grille

    1.5 pF

    Triode

  • Capacite anode pentode-anode triode

    0.07 pF

    Triode

  • Capacite anode pentode-grille triode

    2 pF

    Triode

  • Capacite grille 1 pentode-anode triode

    0.16 pF

    Triode

Data set 02

1961 Ferranti Technical Handbook

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • MaximumFrequencyChangerFrequency

    220 MHz

    Television

SECTION 2

Triode

Characteristic

  • Heater Voltage

    6.3 V

  • Heater Current

    430 mA

Data set 03

1963 Amperex Condensed

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Mixer plate voltage

    100 V

    PentodeSection Mixer

  • Mixer plate current

    14 mA

    PentodeSection Mixer

Characteristic

  • Mixer amplification factor

    20

    PentodeSection Mixer

  • Mixer plate resistance

    400000 ohm

    PentodeSection Mixer

  • Mixer transconductance

    5000 µS

    PentodeSection Mixer

SECTION 2

Triode

Characteristic

  • Heater voltage

    6.3 V

    Published heater rating

  • Heater current

    430 mA

    Published heater rating

  • Triode amplification factor

    47

    TriodeSection Oscillator

Other

  • Triode plate voltage

    170 V

    TriodeSection Oscillator

  • Triode control-grid bias

    -2 V

    TriodeSection Oscillator

  • Triode plate current

    10 mA

    TriodeSection Oscillator

Data set 04

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 2

Triode

Characteristic

  • Heater voltage

    6.3 V

    Published heater rating

  • Heater current

    430 mA

    Published heater rating

  • Triode transconductance

    5000 µS

    TriodeSection

Other

  • Pentode plate voltage

    170 V

    PentodeSection

  • Pentode screen voltage

    170 V

    PentodeSection

  • Pentode grid bias

    -2 V

    PentodeSection

  • Pentode plate current

    10 mA

    PentodeSection

  • Triode plate voltage

    100 V

    TriodeSection

  • Triode grid bias

    -2 V

    TriodeSection

  • Triode plate current

    14 mA

    TriodeSection

Data set 05

1967 Mullard Receiving and Amplifying Valves

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Plate Voltage

    250 V

    PentodeSection

  • Screen Voltage

    200 V

    PentodeSection

  • Plate Current

    7 mA

    PentodeSection

  • Screen Current

    1.8 mA

    PentodeSection

  • Transconductance

    5500 uS

    PentodeSection

  • Plate Resistance

    900000 ohm

    PentodeSection

  • Grid1-to-Grid2 Amplification Factor

    47

    PentodeSection

  • Plate Resistance

    900000 ohm

  • Transconductance

    5500 uS

  • Amplification Factor

    47

Other

  • Maximum Plate Voltage

    250 V

  • Maximum Screen Voltage

    200 V

  • Maximum Plate Dissipation

    1.7 W

  • Maximum Screen Dissipation

    0.75 W

  • Maximum Cathode Current

    14 mA

  • Interelectrode Capacitance Data Published

    1

    SourceTablePresent

SECTION 2

Triode

Characteristic

  • Plate Voltage

    100 V

    TriodeSection

  • Plate Current

    14 mA

    TriodeSection

  • Grid Voltage

    -2 V

    TriodeSection

  • Transconductance

    5000 uS

    TriodeSection

  • Amplification Factor

    20

    TriodeSection

  • Plate Resistance

    4000 ohm

    TriodeSection

  • Plate Resistance

    4000 ohm

  • Transconductance

    5000 uS

  • Amplification Factor

    20

Other

  • Maximum Plate Voltage

    250 V

  • Maximum Plate Dissipation

    1.5 W

  • Maximum Cathode Current

    14 mA

  • Interelectrode Capacitance Data Published

    1

    SourceTablePresent

Data set 06

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    430 mA

    Published nominal value

Other

  • Maximum plate dissipation

    1.7 W

    Published maximum rating

  • Application

    VHF oscillator-frequency converter

    Printed source application

SECTION 2

Triode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    430 mA

    Published nominal value

Other

  • Maximum plate dissipation

    1.5 W

    Published maximum rating

Data set 07

1972 Philips Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    430 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    300 V

  • Maximum Plate Dissipation

    2.5 W

  • Maximum Screen Dissipation

    0.6 W

  • Maximum Cathode Current

    30 mA

Characteristic

  • Transconductance

    6500 µS

    Typical

  • Plate Resistance

    300000 ohm

    Typical

SECTION 2

Triode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    430 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Plate Dissipation

    1.5 W

  • Maximum Cathode Current

    20 mA

Characteristic

  • Transconductance

    5500 µS

    Typical

  • Amplification Factor

    50

    Typical

  • Plate Resistance

    15000 ohm

    Typical

Data set 08

1973 Mazda Valves Binder 2

Published operating points and test conditions from this source.

SECTION 2

Triode

Characteristic

  • up to

    220 MHz

Other

  • Heater Voltage Vh

    63 V

  • Heater Current Ih

    430 mA

  • Heater Positive 100

    100 V

  • Heater Negative 150

    150 V

Data set 09

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • • Pulse duration must not exceed 15% of a vertical scanning cycle (

    2.5 milliseconds

    Published in approved ECF80 target datasheet entry; Section2

  • Heater Voltage (ac/dc) 4.6

    6.3 V

    Published in approved ECF80 target datasheet entry; Section2

  • Heater Current 0.6

    450 mA

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Supply Voltage 550

    550 V

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Voltage 250

    250 V

    Published in approved ECF80 target datasheet entry; Section2

  • Grid-No.2 (Screen-Grid) Supply Voltage

    550 V

    Published in approved ECF80 target datasheet entry; Section2

  • With cathode current of

    14 mA

    Published in approved ECF80 target datasheet entry; Section2

  • With cathode current of 14 mA

    175 V

    Published in approved ECF80 target datasheet entry; Section2

  • With cathode current less than

    10 mA

    Published in approved ECF80 target datasheet entry; Section2

  • With cathode current less than 10 mA

    200 V

    Published in approved ECF80 target datasheet entry; Section2

  • Cathode Current 14

    14 mA

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Dissipation 1.5

    1.7 W

    Published in approved ECF80 target datasheet entry; Section2

  • With plate dissipation greater than

    1.2 W

    Published in approved ECF80 target datasheet entry; Section2

  • With plate dissipation greater than 1.2 watts

    0.5 W

    Published in approved ECF80 target datasheet entry; Section2

  • With p.late dissipation less than

    1.2 W

    Published in approved ECF80 target datasheet entry; Section2

  • Input Resistance at frequency of

    50 MHz

    Published in approved ECF80 target datasheet entry; Section2

  • Equivalent Noise Resistance

    1500 Ω

    Published in approved ECF80 target datasheet entry; Section2

  • For fixed-bias operation 0.5

    0.5 MΩ

    Published in approved ECF80 target datasheet entry; Section2

  • For cathode-bias operation 0.5

    1 MΩ

    Published in approved ECF80 target datasheet entry; Section2

  • Heater Voltage 6.3

    50 V

    Published in approved ECF80 target datasheet entry; Section2

  • Heater Current 0.78

    100 mA

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Supply Voltage 550

    900 V

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Voltage 300

    600 V

    Published in approved ECF80 target datasheet entry; Section2

  • Grid-No.2 Supply Voltage

    550 V

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Dissipation 1

    7 W

    Published in approved ECF80 target datasheet entry; Section2

  • Grid-No.2 Input

    1.8 W

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Voltage 100

    200 V

    Published in approved ECF80 target datasheet entry; Section2

  • For fixed-bias operation I

    1 MΩ

    Published in approved ECF80 target datasheet entry; Section2

  • For cathode-bias operation 2

    2 MΩ

    Published in approved ECF80 target datasheet entry; Section2

Characteristic

  • Plate Voltage 100

    170 V

    Published in approved ECF80 target datasheet entry; Section2

  • Transconductance 5000

    6200 µS

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Current 14

    10 mA

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Resistance (Approx.)

    0.02 MΩ

    Published in approved ECF80 target datasheet entry; Section2

  • Transconductance 2500

    6400 µS

    Published in approved ECF80 target datasheet entry; Section2

  • Plate Current 3.5

    35 mA

    Published in approved ECF80 target datasheet entry; Section2

  • Grid-No.2 Current

    7 mA

    Published in approved ECF80 target datasheet entry; Section2

SECTION 2

Triode

Other

  • • Pulse duration must not exceed 15% of a vertical scanning cycle (

    2.5 milliseconds

    Published in approved ECF80 target datasheet entry; Section1

  • Heater Voltage (ac/dc) 4.6

    6.3 V

    Published in approved ECF80 target datasheet entry; Section1

  • Heater Current 0.6

    450 mA

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Supply Voltage 550

    550 V

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Voltage 250

    250 V

    Published in approved ECF80 target datasheet entry; Section1

  • Grid-No.2 (Screen-Grid) Supply Voltage

    550 V

    Published in approved ECF80 target datasheet entry; Section1

  • With cathode current of

    14 mA

    Published in approved ECF80 target datasheet entry; Section1

  • With cathode current of 14 mA

    175 V

    Published in approved ECF80 target datasheet entry; Section1

  • With cathode current less than

    10 mA

    Published in approved ECF80 target datasheet entry; Section1

  • With cathode current less than 10 mA

    200 V

    Published in approved ECF80 target datasheet entry; Section1

  • Cathode Current 14

    14 mA

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Dissipation 1.5

    1.7 W

    Published in approved ECF80 target datasheet entry; Section1

  • With plate dissipation greater than

    1.2 W

    Published in approved ECF80 target datasheet entry; Section1

  • With plate dissipation greater than 1.2 watts

    0.5 W

    Published in approved ECF80 target datasheet entry; Section1

  • With p.late dissipation less than

    1.2 W

    Published in approved ECF80 target datasheet entry; Section1

  • Input Resistance at frequency of

    50 MHz

    Published in approved ECF80 target datasheet entry; Section1

  • Equivalent Noise Resistance

    1500 Ω

    Published in approved ECF80 target datasheet entry; Section1

  • For fixed-bias operation 0.5

    0.5 MΩ

    Published in approved ECF80 target datasheet entry; Section1

  • For cathode-bias operation 0.5

    1 MΩ

    Published in approved ECF80 target datasheet entry; Section1

  • Heater Voltage 6.3

    50 V

    Published in approved ECF80 target datasheet entry; Section1

  • Heater Current 0.78

    100 mA

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Supply Voltage 550

    900 V

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Voltage 300

    600 V

    Published in approved ECF80 target datasheet entry; Section1

  • Grid-No.2 Supply Voltage

    550 V

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Dissipation 1

    7 W

    Published in approved ECF80 target datasheet entry; Section1

  • Grid-No.2 Input

    1.8 W

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Voltage 100

    200 V

    Published in approved ECF80 target datasheet entry; Section1

  • For fixed-bias operation I

    1 MΩ

    Published in approved ECF80 target datasheet entry; Section1

  • For cathode-bias operation 2

    2 MΩ

    Published in approved ECF80 target datasheet entry; Section1

Characteristic

  • Plate Voltage 100

    170 V

    Published in approved ECF80 target datasheet entry; Section1

  • Transconductance 5000

    6200 µS

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Current 14

    10 mA

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Resistance (Approx.)

    0.02 MΩ

    Published in approved ECF80 target datasheet entry; Section1

  • Transconductance 2500

    6400 µS

    Published in approved ECF80 target datasheet entry; Section1

  • Plate Current 3.5

    35 mA

    Published in approved ECF80 target datasheet entry; Section1

  • Grid-No.2 Current

    7 mA

    Published in approved ECF80 target datasheet entry; Section1

Data set 10

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Cathode to heater voltage Vkf max.

    100 V

    Cathode to heater voltage Vkf max. 100 V

SECTION 2

Triode

Other

  • Heater voltage Vs

    6.3 V

    Heater voltage Vs 6.3 V

  • Heater current If

    430 mA

    Heater current If 430 mA

  • Cathode to heater voltage Vkg max.

    100 V

    Cathode to heater voltage Vkg max. 100 V