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Voltage Pentode - Remote Cutoff (single) ·Pentode

4BZ6

Semi-remote-cutoff pentode designed for gain-controlled television video-IF amplifier stages. Its transfer characteristic supports AGC operation while preserving the wide bandwidth needed for television signals.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
7CM
Socket code
B7G
Base pins
7
Nominal heater
4.2 V / 450 mA

Description

Semiremote-cutoff pentode used in gain-controlled television video-IF amplifier stages.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
7CM
Socket code
B7G
Base pins
7
Nominal heater voltage
4.2 V
Nominal heater current
450 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

7CM - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1G1AG1 — Control Grid

EIA chart transcription; manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CM

PIN2KAK — Cathode

EIA chart transcription; manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CM

PIN3H—H — Heater

EIA chart transcription; manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CM

PIN4H—H — Heater

EIA chart transcription; manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CM

PIN5PAP — Plate (Anode)

EIA chart transcription; manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CM

PIN6G2AG2 — Screen Grid

EIA chart transcription; manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CM

PIN7G3AG3 — Suppressor GridGroup 7CM7

EIA chart transcription; manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CM

PIN7ISAIS — Internal ScreenGroup 7CM7

EIA chart transcription; manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CM

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
260000 Ω
Transconductance
0.008 S
Max plate voltage
330 V
Max screen voltage
330 V
Max plate dissipation
2.3 W
Max screen dissipation
0.55 W
Rectifier warm-up time
11 s

Reference/equivalence-only source: ratings/characteristics for this section are not reproduced; missing promoted values intentionally not inferred from the external 6BZ6 datasheet.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Heater Warmup Time

    11 s

Data set 02

1965 Sylvania Electronic Tubes Vol3

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    125 V

  • Screen-grid voltage

    125 V

  • Cathode bias resistor

    56 Ohm

  • Plate current

    14 mA

  • Screen-grid current

    3.6 mA

Characteristics

  • Plate resistance

    260000 Ohm

  • Transconductance

    8000 uS

  • Control-grid cutoff voltage

    -19 V

Capacitance

  • Grid-to-plate capacitance

    0.015 pF

    Shielded

  • Input capacitance

    7 pF

    Shielded

  • Output capacitance

    3 pF

    Shielded

Data set 03

1965 Westinghouse Data Book

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater Voltage

    4.2 V

  • Heater Current

    450 mA

  • Transconductance

    9000 uS

    RepresentativePublishedPoint

  • Plate Resistance

    260000 ohm

    RepresentativePublishedPoint

Other

  • Maximum Plate Voltage

    300 V

  • Maximum Plate Dissipation

    2 W

Data set 04

1966 Tung Sol Electronic Tubes 1 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    125 V

    IFAmplifier

  • Screen voltage

    125 V

    IFAmplifier

  • Plate current

    12 mA

    IFAmplifier

  • Screen current

    3.8 mA

    IFAmplifier

Characteristic

  • Transconductance

    9000 µS

    Section1

  • Plate resistance

    350000 Ω

    Section1

Capacitance

  • Grid-to-plate capacitance maximum

    0.025 pF

    Section1

  • Input capacitance

    6.3 pF

    Section1

  • Output capacitance

    7.9 pF

    Section1

Data set 05

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater Voltage

    4.2 V

  • Heater Current

    450 mA

Data set 06

1971 RCA HB3 Binder 4 of 7

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater Current

    420 mA to 480 mA

    Published nominal ± tolerance

  • Heater Voltage

    4.2 V

    At heater current 0.45 A

  • Warm-Up Time

    11 s

    Average

  • Plate Voltage

    125 V

    Inherited from explicitly referenced 6-volt parent type; heater variant

  • Screen Voltage

    125 V

    Inherited from explicitly referenced 6-volt parent type; heater variant

Characteristics

  • Transconductance

    8000 µS

    Inherited from explicitly referenced 6-volt parent type; heater variant

Data set 07

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Peak Plate Current

    180 mA

    Published in approved 12BZ6 target entry; Section1

  • Heater Voltage (ac/dc) 3.15 4.2 6.3

    12.6 V

    Published in approved 12BZ6 target entry; Section1

  • Heater Current 0.6 0.45 0.3

    150 mA

    Published in approved 12BZ6 target entry; Section1

  • age)

    11 seconds

    Published in approved 12BZ6 target entry; Section1

  • Plate Voltage

    330 V

    Published in approved 12BZ6 target entry; Section1

  • Grid No.3 (Suppressor-Grid) Voltage, Positive value

    0 V

    Published in approved 12BZ6 target entry; Section1

  • Grid-No.2 (Screen-Grid) Supply Voltage

    330 V

    Published in approved 12BZ6 target entry; Section1

  • Grid-No.l (Control-Grid) Voltage, Positive-bias value

    0 V

    Published in approved 12BZ6 target entry; Section1

  • Plate Dissipation

    2.3 W

    Published in approved 12BZ6 target entry; Section1

  • For grid-No. 2 voltages up to

    165 V

    Published in approved 12BZ6 target entry; Section1

  • For grid-No. 2 voltages up to 165 volts

    0.55 W

    Published in approved 12BZ6 target entry; Section1

  • For grid-No.2 voltages between 165 and

    330 V

    Published in approved 12BZ6 target entry; Section1

  • For fixed-bias operation

    0.25 MΩ

    Published in approved 12BZ6 target entry; Section1

  • For cathode-bias operation

    1 MΩ

    Published in approved 12BZ6 target entry; Section1

Characteristic

  • Plate Supply Voltage

    125 V

    Published in approved 12BZ6 target entry; Section1

  • Grid-No.2 Supply Voltage

    125 V

    Published in approved 12BZ6 target entry; Section1

  • Cathode-Bias Resistor

    56 Ω

    Published in approved 12BZ6 target entry; Section1

  • Plate Resistance (Approx.)

    0.26 MΩ

    Published in approved 12BZ6 target entry; Section1

  • Grid-No.l Voltage (Approx.) for transconductance of

    50 µS

    Published in approved 12BZ6 target entry; Section1

  • Grid-No.l Voltage (Approx.) for transconductance of 50 /imhos

    -3.6 V

    Published in approved 12BZ6 target entry; Section1

  • Grid-No.l Voltage (Approx.) for transconductance of

    700 µS

    Published in approved 12BZ6 target entry; Section1

  • Heater Voltage (ac/dc)

    6.3 V

    Published in approved 12BZ6 target entry; Section1

  • Heater Current

    150 mA

    Published in approved 12BZ6 target entry; Section1