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Voltage Pentode - Remote Cutoff (single) ·Pentode

12SK7GT

Glass-tubular variable-mu pentode for automatic-gain-controlled RF and IF receiver amplification in series-string equipment.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
8N
Socket code
IO
Base pins
8
Nominal heater
12.6 V / 150 mA

Description

12SK7GT — Remote-Cutoff RF Pentode

The 12SK7GT is an indirectly heated, remote-cutoff (variable-mu) pentode designed for use as a radio-frequency (RF) or intermediate-frequency (IF) amplifier in radio receivers. Housed in a T-9 glass envelope with an eight-pin octal base, it is particularly suited for AC/DC receivers where series-string heater operation is employed.

Overview

The 12SK7GT is engineered to operate in stages utilizing automatic volume control (AVC). Its remote-cutoff characteristic allows the tube to handle a wide range of signal voltages with minimal cross-modulation and distortion. The design features a single-ended construction, meaning all electrode connections, including the control grid, are brought out through the base pins, eliminating the need for a top cap.

The electrical characteristics, ratings, and physical dimensions of the 12SK7GT are identical to those of the 6SK7GT, with the sole exception of the heater ratings. It is also the glass-envelope equivalent of the metal-shell 12SK7.

Construction, Heater, and Basing

The 12SK7GT incorporates a coated unipotential cathode. The heater is designed to operate from either AC or DC power supplies.

Heater ParameterValue
Nominal Heater Voltage12.6 V
Nominal Heater Current0.15 A (150 mA)
Heating MethodIndirect
Cathode TypeCoated unipotential

Physical Dimensions

The tube is housed in a T-9 glass bulb with a small wafer octal 8-pin base (basing designation 8N). It can be operated in any mounting position.

  • Maximum Diameter: 1.188 inches
  • Maximum Seated Height: 2.750 inches
  • Maximum Overall Height: 3.312 inches

Pin Connections

The 8N basing configuration provides the following pin assignments, viewed from the bottom of the tube:

Pin NumberElectrode Connection
Pin 1Shell / Shield (NC or connected to external shield)
Pin 2Heater
Pin 3Grid No. 3 (Suppressor Grid)
Pin 4Grid No. 1 (Control Grid)
Pin 5Cathode
Pin 6Grid No. 2 (Screen Grid)
Pin 7Heater
Pin 8Plate (Anode)

In typical applications, Grid No. 3 (Pin 3) is tied directly to the Cathode (Pin 5) at the tube socket.

Electrical Ratings

The maximum ratings for the 12SK7GT are established under the Design Center Rating System (RMA Standard M8-210). These limits represent the maximum values that the tube can safely withstand under normal operating variations:

  • Maximum Plate Voltage: 300 V
  • Maximum Grid No. 2 (Screen) Supply Voltage: 300 V
  • Maximum Grid No. 2 Voltage: See Rating Chart (typically up to 150 V)
  • Maximum Positive DC Grid No. 1 Voltage: 0 V
  • Maximum Plate Dissipation: 4.0 W
  • Maximum Grid No. 2 Dissipation: 0.4 W
  • Maximum Heater-Cathode Voltage: 90 V

Typical Operating Conditions and Characteristics

The 12SK7GT can be operated under different typical Class A1 amplifier conditions depending on the plate supply voltage. The following table outlines two standard operating points:

ParameterOperating Point AOperating Point B
Plate Voltage100 V250 V
Grid No. 2 Voltage100 V100 V
Grid No. 1 Voltage-1 V-3 V
Grid No. 3 VoltageConnected to CathodeConnected to Cathode
Plate Current13 mA9.2 mA
Grid No. 2 Current4.0 mA2.6 mA
Plate Resistance (Approx.)120,000 Ω800,000 Ω
Transconductance2,350 µmhos2,000 µmhos
Grid No. 1 Voltage for Gm = 10 µmhos (Approx.)-35 V-35 V

Calculations and Variable-Mu Behavior

The remote-cutoff characteristic is mathematically demonstrated by the relationship between the control grid bias and the transconductance.

  • At a grid bias of -3 V (Operating Point B), the transconductance is 2,000 µmhos.
  • When the grid bias is increased to -35 V, the transconductance drops to 10 µmhos.

This represents a transconductance reduction ratio calculation of: 2000 \mumhos10 \mumhos=200\frac{2000\text{ \mu mhos}}{10\text{ \mu mhos}} = 200

This wide control range allows the tube to handle strong local signals without overloading, as the AVC circuit can apply a highly negative bias to reduce the stage gain by a factor of 200.

Direct Interelectrode Capacitances

The capacitances of the 12SK7GT vary depending on whether the tube is shielded. When measured with a close-fitting external shield connected to Pin 5, the typical capacitances are:

  • Grid No. 1 to Plate (Max): 0.005 pF
  • Input (Grid No. 1 to all other electrodes except Plate): 6.5 pF
  • Output (Plate to all other electrodes except Grid No. 1): 7.5 pF

For the unshielded metal-shell version (12SK7), the capacitances are:

  • Grid No. 1 to Plate (Max): 0.003 pF
  • Input: 6.0 pF
  • Output: 7.0 pF

The extremely low grid-to-plate capacitance (0.005 pF or less) is essential for preventing Miller-effect feedback, which can cause instability or oscillation in high-gain RF and IF amplifier stages.

Characteristic Curves and Qualitative Interpretation

The relationship between the electrode voltages and currents is illustrated by the tube's characteristic curves:

  • Plate Current vs. Plate Voltage: The family of curves shows typical pentode behavior. Above a plate voltage of approximately 50 V, the plate current curves become nearly horizontal, indicating that plate current is largely independent of plate voltage and is primarily controlled by the Grid No. 1 and Grid No. 2 voltages.
  • Transconductance vs. Grid No. 1 Voltage: At a constant plate voltage of 250 V and screen voltage of 100 V, the transconductance curve decreases smoothly and gradually as the control grid bias is made more negative. This gradual slope is the defining feature of the remote-cutoff design, preventing the abrupt cutoff of plate current that occurs in sharp-cutoff pentodes.
  • Transconductance and Plate Resistance vs. Grid No. 2 Voltage: With a fixed plate voltage of 250 V and a grid bias of -3 V, increasing the screen grid (Grid No. 2) voltage from 25 V to 150 V results in a significant increase in transconductance and plate current, while the plate resistance decreases. This highlights the importance of maintaining a stable screen voltage to preserve the desired gain characteristics.

Related Designations and Comparisons

The 12SK7GT is part of a family of closely related tubes:

  • 6SK7GT / 6SK7: These tubes share identical electrical ratings, typical operating points, and physical dimensions with the 12SK7GT, but utilize a 6.3 V, 0.3 A heater.
  • 12SK7: This is the metal-shell version of the 12SK7GT. It shares the same electrical characteristics and 12.6 V heater rating but is housed in a metal envelope rather than glass.
  • 12SF7 / 12SF7GT: While also remote-cutoff pentodes, these types include an internal diode plate, making them distinct from the pure pentode structure of the 12SK7GT.

Direct substitution between these types must take into account the heater voltage differences (12.6 V vs. 6.3 V) and envelope shielding characteristics.

Technical Summary

The 12SK7GT is an octal-based, remote-cutoff RF pentode featuring a 12.6 V, 0.15 A heater. It is designed for RF and IF amplification in radio receivers, particularly in AC/DC series-string configurations. With a maximum plate voltage rating of 300 V and a plate dissipation limit of 4.0 W, it provides reliable service under typical operating conditions of 100 V to 250 V on the plate. Its variable-mu design allows for smooth automatic volume control with a transconductance range extending from 2,000–2,350 µmhos down to 10 µmhos at a grid bias of -35 V.

Socket description

International Octal

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
8N
Socket code
IO
Base pins
8
Nominal heater voltage
12.6 V
Nominal heater current
150 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

8N - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1SHASH — Internal Shield

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN2H—H — Heater

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN3G3AG3 — Suppressor Grid

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN4G1AG1 — Control Grid

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN5KAK — Cathode

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN6G2AG2 — Screen Grid

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN7H—H — Heater

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN8PAP — Plate (Anode)

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
800000 Ω
Transconductance
0.002 S
Max plate voltage
300 V
Max screen voltage
150 V
Max plate dissipation
4 W
Max screen dissipation
0.11 W

Promoted from printed maximum/characteristic columns; additional published values retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Input capacitance

    6.5 pF

    Section1

  • Output capacitance

    7.5 pF

    Section1

  • Grid-to-plate capacitance

    0.005 pF

    Section1

Other

  • Plate voltage

    100 V

    ClassA

  • Screen voltage

    100 V

    ClassA

  • Control-grid voltage

    -1 V

    ClassA

  • Plate current

    13 mA

    ClassA

  • Screen current

    4 mA

    ClassA

Characteristic

  • Plate resistance

    120000 Ω

    Section1

  • Transconductance

    2350 µS

    Section1

Data set 02

1961 Ferranti Technical Handbook

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Cutoff characteristic

    Variable-mu

Application

  • Application

    RF / IF amplifier

Data set 03

1966 Tung Sol Electronic Tubes 2 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • GRID TO PLATE

    0.003 pF

    Interelectrode capacitances; published column 1

  • GRID TO PLATE

    0.005 pF

    Interelectrode capacitances; published column 2

Other

  • HEATER VOLTAGE

    6.3 V

    Maximum ratings

  • MAXIMUM HEATER CATHODE VOLTAGE

    90 V

    Maximum ratings

  • MAXIMUM PLATE VOLTAGE

    300 V

    Maximum ratings

  • MAXIMUM GRID #2 SUPPLY VOLTAGE

    300 V

    Maximum ratings

  • MAXIMUM POSITIVE

    0 V

    Maximum ratings; published column 1

  • MAX EMUM PLATE DISSIPATION

    4 W

    Maximum ratings; published column 1

  • MAX EMUM PLATE DISSIPATION

    0 W

    Maximum ratings; published column 2

  • MAXIMUM GRID #2 DISSIPATION

    0 W

    Maximum ratings; published column 1

  • MAXIMUM GRID #2 DISSIPATION

    11 W

    Maximum ratings; published column 2

  • HEATER VOLTAGE

    6 V

    Typical operating conditions; published column 1

  • HEATER CURRENT

    0 mA

    Typical operating conditions; published column 1

  • PLATE VOLTAGE

    100 V

    Typical operating conditions; published column 1

  • PLATE VOLTAGE

    25 V

    Typical operating conditions; published column 2

  • PLATE VOLTAGE

    0 V

    Typical operating conditions; published column 3

  • PLATE CURRENT jj

    9.2 mA

    Typical operating conditions

  • GRID #2 CURRENT

    11 mA

    Typical operating conditions; published column 1

  • GRID #2 CURRENT

    2 mA

    Typical operating conditions; published column 2

  • PLATE RESISTANCE (APPRO%.)

    12000000 ohm

    Typical operating conditions; published column 1

  • PLATE RESISTANCE (APPRO%.)

    0 ohm

    Typical operating conditions; published column 2

  • GRID #i VOLTAGE (APPRO%.) FOR Gm

    10 uS

    Typical operating conditions; published column 1

  • GRID #i VOLTAGE (APPRO%.) FOR Gm

    -35 uS

    Typical operating conditions; published column 2

  • Ef =

    6.3 V

    Typical operating conditions

  • EcZ =

    100 V

    Typical operating conditions

  • Eci '

    0 V

    Typical operating conditions; published column 1

  • PLATE CURRENT (

    1 mA

    Typical operating conditions; published column 1

  • PLATE CURRENT (

    0 mA

    Typical operating conditions; published column 2

  • Eq =

    6.3 V

    Typical operating conditions

  • Eb =

    250 V

    Typical operating conditions

  • EC1

    0 V

    Typical operating conditions

  • Ef =

    2.5 V

    Typical operating conditions; published column 2

  • E~i

    -3 V

    Typical operating conditions

  • Eo3

    0 V

    Typical operating conditions; published column 1

  • EC3

    0 V

    Typical operating conditions

  • Maximum plate voltage

    300 V

    Published datasheet; promoted section value

  • Maximum plate dissipation

    4 W

    Published datasheet; promoted section value

  • Maximum screen dissipation

    0.11 W

    Published datasheet; promoted section value

Characteristic

  • Plate resistance

    800000 ohm

    Published datasheet; promoted section value

  • Transconductance

    0.002 A/V

    Published datasheet; promoted section value