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Voltage Pentode - Remote Cutoff (single) ·Pentode

12SK7

Variable-mu pentode designed for AVC-controlled RF and IF amplification with broad gain reduction and reduced cross-modulation.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
8N
Socket code
IO
Base pins
8
Nominal heater
12.6 V / 150 mA

Description

12SK7 — Remote-Cutoff RF Pentode

An indirectly heated, triple-grid variable-mu pentode designed for radio-frequency and intermediate-frequency amplification with automatic volume control, offering minimized cross-modulation.

Overview

The 12SK7 (along with its glass-envelope variants 12SK7GT and 12SK7GT/G) is a remote-cutoff (variable-mu) pentode designed primarily for use as a radio-frequency (RF) and intermediate-frequency (IF) amplifier. Its design incorporates three grids—a control grid, a screen grid, and a suppressor grid—to achieve stable high-gain amplification while minimizing cross-modulation. The tube is specifically optimized for circuits employing automatic volume control (AVC), where the gain of the stage must be smoothly varied over a wide range of signal levels.

The 12SK7 features an indirectly heated, coated unipotential cathode and is designed to operate from a nominal 12.6 V heater supply. With the exception of its heater ratings, the electrical characteristics and maximum ratings of the 12SK7 family are identical to those of the 6SK7 and 6SK7GT series.

Construction, Physical Dimensions, and Base Pinout

The 12SK7 is manufactured in both metal-shell and glass-bulb configurations, allowing flexibility in physical installation and shielding requirements:

  • 12SK7 (Metal Shell): Housed in an MT8 or MT8G-1 metal envelope with a maximum overall height of 2-5/8 inches, a maximum seated height of 2-5/16 inches, and a maximum diameter of 1-5/16 inches.
  • 12SK7GT / 12SK7GT/G (Glass Bulb): Housed in a T-9 glass envelope with a maximum overall height of 3-5/16 inches, a maximum seated height of 2-3/4 inches (or 2-11/16 inches depending on the specific variant), and a maximum diameter of 1-5/16 inches.

Both versions utilize a small wafer 8-pin octal base (basing designation 8N) and can be mounted in any position. The pin connections, viewed from the bottom of the base, are assigned as follows:

PinElectrode Connection
Pin 1Shield (S) / Metal Shell
Pin 2Heater (H)
Pin 3Suppressor Grid (G3 / Su)
Pin 4Control Grid (G1)
Pin 5Cathode (K / C)
Pin 6Screen Grid (G2 / Gs)
Pin 7Heater (H)
Pin 8Plate (P / A)

In typical applications, the suppressor grid (Pin 3) is connected directly to the cathode (Pin 5) at the socket.

Heater Characteristics

The heater is designed for either AC or DC operation. The calculated heater power is 1.89 W, derived from the nominal heater voltage of 12.6 V and the nominal heater current of 0.15 A ($12.6\text{ V} \times 0.15\text{ A} = 1.89\text{ W}$).

Heater ParameterValue
Nominal Heater Voltage12.6 V
Nominal Heater Current0.15 A
Calculated Heater Power1.89 W
Supply TypeAC or DC
Cathode TypeCoated unipotential

Electrical Characteristics and Typical Operating Points

The 12SK7 is characterized by its remote-cutoff control grid, which allows the transconductance to be varied smoothly over a wide range of negative grid bias voltages. Typical Class A1 amplifier operating points are documented at two distinct plate voltages:

ParameterLow-Voltage PointStandard-Voltage Point
Plate (Anode) Voltage100 V250 V
Screen (Grid #2) Voltage100 V100 V
Control Grid (Grid #1) Voltage-1 V-3 V
Cathode Bias Resistor—220 Ω
Suppressor Grid (Grid #3)Connected to cathodeConnected to cathode
Plate Current13 mA to 15 mA9.2 mA
Screen Current4.0 mA2.4 mA to 2.6 mA
Plate Resistance (Anode Impedance)0.12 MΩ0.8 MΩ
Transconductance (Mutual Conductance)2,350 µmhos2,000 µmhos (2.0 mA/V)
Control Grid Voltage for Gm = 10 µmhos-35 V-35 V

At the standard operating point of 250 V on the plate and 100 V on the screen, a negative control grid bias of -3 V yields a transconductance of 2,000 µmhos and a high plate resistance of 0.8 Megohm. When the control grid bias is increased to -35 V, the transconductance is reduced to approximately 10 µmhos (0.01 mA/V), demonstrating the remote-cutoff characteristic.

Maximum Ratings

The maximum ratings for the 12SK7 family, interpreted according to the RMA Standard M8-210, establish the safe operating boundaries for the device:

Rating ParameterLimit Value
Maximum Plate Voltage300 V
Maximum Screen (Grid #2) Supply Voltage300 V
Maximum Screen (Grid #2) Voltage125 V to 150 V
Maximum Heater-Cathode Voltage90 V
Minimum External Control Grid Bias Voltage0 V
Maximum Plate Dissipation4.0 W
Maximum Screen (Grid #2) Dissipation0.4 W

Direct Interelectrode Capacitances

The interelectrode capacitances of the 12SK7 differ slightly between the metal-shell and glass-bulb versions. These values are measured with the shell (for the metal tube) or an external shield (for the glass tube) connected directly to the cathode:

Capacitance Parameter12SK7 (Metal Shell)12SK7GT / 12SK7GT/G (Glass)
Control Grid to Cathode (Input)6.0 µµF6.5 µµF
Plate to Cathode (Output)7.0 µµF7.5 µµF
Control Grid to Plate (Maximum)0.003 µµF0.005 µµF

The extremely low grid-to-plate capacitance (0.003 to 0.005 µµF maximum) is a critical design feature of this RF pentode, preventing unwanted feedback and self-oscillation in high-gain RF and IF amplifier stages.

Characteristic Curves and Variable-Mu Behavior

The published characteristic curves for the 12SK7 family illustrate the electrical behavior of the tube under varying voltage conditions:

  • Plate Current vs. Plate Voltage (IbI_b vs. EbE_b): The family of curves plotted for a screen voltage (Ec2E_{c2}) of 100 V and suppressor grid (E[c3](/tubes/C3)E_{[c3](/tubes/C3)}) at 0 V shows typical pentode characteristics. Above a plate voltage of approximately 50 V, the plate current curves flatten out, indicating very high plate resistance. The spacing of the curves for different control grid voltages (E[c1](/tubes/C1)E_{[c1](/tubes/C1)}) from 0 V down to -15 V shows a gradual compression, which is characteristic of a remote-cutoff grid structure.
  • Transconductance and Currents vs. Control Grid Voltage (gmg_m, IbI_b, Ic2I_{c2} vs. E[c1](/tubes/C1)E_{[c1](/tubes/C1)}): At a plate voltage of 250 V and screen voltage of 100 V, the transconductance (gmg_m) decreases smoothly as the control grid voltage is made more negative. Rather than cutting off abruptly, the plate and screen currents taper off gradually, allowing the tube to handle large input signals without clipping or generating excessive cross-modulation when biased near cutoff by an AVC circuit.
  • Characteristics vs. Screen Voltage (gmg_m, IbI_b, Ic2I_{c2}, rpr_p vs. Ec2E_{c2}): With a constant plate voltage of 250 V and control grid bias of -3 V, increasing the screen voltage from 25 V to 150 V results in a linear increase in transconductance and plate current, while the plate resistance (rpr_p) drops from approximately 2.5 Megohms down to less than 0.5 Megohm.

Related Designations and Comparisons

The 12SK7, 12SK7GT, and 12SK7GT/G share identical electrical characteristics and ratings, differing only in their physical construction (metal shell versus glass bulb) and slight variations in interelectrode capacitances.

The 12SK7 family is electrically identical to the 6SK7 and 6SK7GT series, with the sole exception of the heater requirements. The 6SK7 series operates on a 6.3 V, 0.3 A heater supply, whereas the 12SK7 series is designed for a 12.6 V, 0.15 A supply. This makes the 12SK7 family highly suitable for series-string heater arrangements or 12-volt electrical systems.

Within the 12-volt octal lineup, the 12SK7 serves as the remote-cutoff RF pentode, complementing other specialized types such as the 12SJ7 (a sharp-cutoff RF pentode) and the 12SQ7 (a double diode triode). While these tubes share similar physical dimensions and octal bases, their internal structures and electrical characteristics are distinct, and they cannot be directly substituted for one another without circuit modification.

Technical Summary

The 12SK7 is an octal-based, indirectly heated remote-cutoff RF pentode. It features a 12.6 V, 0.15 A heater, a coated unipotential cathode, and a triple-grid structure designed to minimize cross-modulation and facilitate automatic volume control in RF and IF amplifier stages.

At its standard operating point of 250 V on the plate and 100 V on the screen, the tube provides a transconductance of 2,000 µmhos and a plate resistance of 0.8 Megohm, with plate and screen currents of 9.2 mA and 2.4 to 2.6 mA, respectively. Its remote-cutoff characteristic allows the transconductance to be reduced smoothly to 10 µmhos at a control grid bias of -35 V. Available in both metal (12SK7) and glass (12SK7GT, 12SK7GT/G) envelopes, this versatile pentode remains a standard reference for variable-gain voltage amplification in classic receiver designs.

Socket description

International Octal

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
8N
Socket code
IO
Base pins
8
Nominal heater voltage
12.6 V
Nominal heater current
150 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

8N - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1SHASH — Internal Shield

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN2H—H — Heater

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN3G3AG3 — Suppressor Grid

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN4G1AG1 — Control Grid

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN5KAK — Cathode

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN6G2AG2 — Screen Grid

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN7H—H — Heater

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

PIN8PAP — Plate (Anode)

EIA transcription; independent manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8N

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
800000 Ω
Transconductance
0.002 S
Max plate voltage
300 V
Max screen voltage
150 V
Max plate dissipation
4 W
Max screen dissipation
0.11 W

Promoted from printed maximum/characteristic columns; additional published values retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1948 Brimar Radio Valve Manual

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Anode Voltage

    250 V

  • Anode Current

    9.2 mA

  • Screen Voltage

    100 V

  • Screen Current

    2.4 mA

  • Control Grid Voltage

    -3 V

  • Cathode Bias Resistor

    220 ohm

  • Control Grid Voltage for Low Transconductance

    -35 V

    Transconductance=0.01mA/V

Data set 02

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Input capacitance

    6 pF

    Section1

  • Output capacitance

    7 pF

    Section1

  • Grid-to-plate capacitance

    0.003 pF

    Section1

Other

  • Plate voltage

    250 V

    ClassA

  • Screen voltage

    100 V

    ClassA

  • Control-grid voltage

    -3 V

    ClassA

  • Plate current

    9.2 mA

    ClassA

  • Screen current

    2.6 mA

    ClassA

Characteristic

  • Plate resistance

    800000 Ω

    Section1

  • Transconductance

    2000 µS

    Section1

Data set 03

1966 Tung Sol Electronic Tubes 2 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • GRID TO PLATE

    0.003 pF

    Interelectrode capacitances; published column 1

  • GRID TO PLATE

    0.005 pF

    Interelectrode capacitances; published column 2

Other

  • HEATER VOLTAGE

    6.3 V

    Maximum ratings

  • MAXIMUM HEATER CATHODE VOLTAGE

    90 V

    Maximum ratings

  • MAXIMUM PLATE VOLTAGE

    300 V

    Maximum ratings

  • MAXIMUM GRID #2 SUPPLY VOLTAGE

    300 V

    Maximum ratings

  • MAXIMUM POSITIVE

    0 V

    Maximum ratings; published column 1

  • MAX EMUM PLATE DISSIPATION

    4 W

    Maximum ratings; published column 1

  • MAX EMUM PLATE DISSIPATION

    0 W

    Maximum ratings; published column 2

  • MAXIMUM GRID #2 DISSIPATION

    0 W

    Maximum ratings; published column 1

  • MAXIMUM GRID #2 DISSIPATION

    11 W

    Maximum ratings; published column 2

  • HEATER VOLTAGE

    6 V

    Typical operating conditions; published column 1

  • HEATER CURRENT

    0 mA

    Typical operating conditions; published column 1

  • PLATE VOLTAGE

    100 V

    Typical operating conditions; published column 1

  • PLATE VOLTAGE

    25 V

    Typical operating conditions; published column 2

  • PLATE VOLTAGE

    0 V

    Typical operating conditions; published column 3

  • PLATE CURRENT jj

    9.2 mA

    Typical operating conditions

  • GRID #2 CURRENT

    11 mA

    Typical operating conditions; published column 1

  • GRID #2 CURRENT

    2 mA

    Typical operating conditions; published column 2

  • PLATE RESISTANCE (APPRO%.)

    12000000 ohm

    Typical operating conditions; published column 1

  • PLATE RESISTANCE (APPRO%.)

    0 ohm

    Typical operating conditions; published column 2

  • GRID #i VOLTAGE (APPRO%.) FOR Gm

    10 uS

    Typical operating conditions; published column 1

  • GRID #i VOLTAGE (APPRO%.) FOR Gm

    -35 uS

    Typical operating conditions; published column 2

  • Ef =

    6.3 V

    Typical operating conditions

  • EcZ =

    100 V

    Typical operating conditions

  • Eci '

    0 V

    Typical operating conditions; published column 1

  • PLATE CURRENT (

    1 mA

    Typical operating conditions; published column 1

  • PLATE CURRENT (

    0 mA

    Typical operating conditions; published column 2

  • Eq =

    6.3 V

    Typical operating conditions

  • Eb =

    250 V

    Typical operating conditions

  • EC1

    0 V

    Typical operating conditions

  • Ef =

    2.5 V

    Typical operating conditions; published column 2

  • E~i

    -3 V

    Typical operating conditions

  • Eo3

    0 V

    Typical operating conditions; published column 1

  • EC3

    0 V

    Typical operating conditions

  • Maximum plate voltage

    300 V

    Published datasheet; promoted section value

  • Maximum plate dissipation

    4 W

    Published datasheet; promoted section value

  • Maximum screen dissipation

    0.11 W

    Published datasheet; promoted section value

Characteristic

  • Plate resistance

    800000 ohm

    Published datasheet; promoted section value

  • Transconductance

    0.002 A/V

    Published datasheet; promoted section value