Z5317

High-mu metal-ceramic planar triode for continuous-wave RF power-amplifier and frequency-multiplier service. High transconductance and compact planar geometry provide useful high-frequency power from modest dissipation.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 6.3 V / 750 mA

Description

High-mu metal-and-ceramic planar triode for CW RF power-amplifier or frequency-multiplier service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 6.3 V
Nominal heater current: 750 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances

Transconductance: 0.0135 S
Amplification factor: 35
Max plate voltage: 350 V
Max plate dissipation: 8 W
Max cathode current: 35 mA

Promoted fields mapped semantically from printed ratings/characteristics headings; pulsed and microwave-specific limits remain in parameter rows when fixed-field semantics are ambiguous.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Triode

Characteristic

Heater Current
750 mA
Heater Current 0.75 Amperes
Plate Voltage --- -—
350 V
Plate Voltage --- -—- 350 Volts
DC Grid Bias, approximate -1.5 -3.5
-5.25 V
DC Grid Bias, approximate -1.5 -3.5 -5.25 Volts
Transconductance 13500 16500
19000 uS
Transconductance 13500 16500 19000 Micromhos
Plate Current --- -—
35 mA
Plate Current --- -—- 35 Milliamperes
Frequency
1000 MHz
Frequency 1000 Megacycles
DC Plate Voltage
350 V
DC Plate Voltage 350 Volts
DC Plate Current
35 mA
DC Plate Current 35 Milliamperes
DC Grid Current
8 mA
DC Grid Current 8.0 Milliamperes
Useful Power Qutput
5 W
Useful Power Qutput 5.0 Watts
CATHOOE
0 C
CATHOOE 0 C sqmu {

Capacitance

Grid to Plate 2.10 2.3
2.45 pf
Grid to Plate 2.10 2.3 2.45 pf
Grid to Cathode, Eh = 0 4.60 5.1
5.45 pf
Grid to Cathode, Eh = 0 4.60 5.1 5.45 pf
Plate to Cathode, Eh = O --- 0.035
0.045 pf
Plate to Cathode, Eh = O --- 0.035 0.045 pf
Envelope Temperature
175 C
Envelope Temperature 175 C
Frequency
1000 MHz
Frequency 1000 Megacycles
DC Plate Voltage
350 V
DC Plate Voltage 350 Volts
Negative DC Grid Voltage
50 V
Negative DC Grid Voltage 50 Volts

Other

DC Plate Current
35 mA
DC Plate Current 35 Milliamperes
DC Grid Current
15 mA
DC Grid Current 15 Milliamperes
Plate Dissipation
8 W
Plate Dissipation 8.0 Watts
Heater Positive with Respect to Cathode
90 V
Heater Positive with Respect to Cathode 90 Volts
Heater Negative with Respect to Cathode
90 V
Heater Negative with Respect to Cathode 90 Volts
Envelope Temperature at Hottest Point
175 c
Envelope Temperature at Hottest Point 175 c