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Power - Tetrode (NOT beam) ·Tetrode-Tetrode

YL1060

Radiation-cooled VHF double tetrode for RF amplification, oscillation, multiplication, and modulation. The paired power sections support push-pull Class C operation around 175 MHz, with published output reaching roughly 180 W under intermittent service conditions.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
-
Socket code
SEPTAR7
Base pins
7
Nominal heater
12.6 V / 900 mA

Description

The Mullard YL1060 is a radiation-cooled VHF double tetrode for amplifier, oscillator, frequency multiplier and modulator service.

Socket description

Septar 7-contact base

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
SEPTAR7
Base pins
7
Nominal heater voltage
12.6 V
Nominal heater current
900 mA
Parallel heater voltage
6.3 V
Parallel heater current
1.8 A
Series capable
Yes

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.0045 S
Max plate voltage
1000 V
Max screen voltage
360 V
Max plate dissipation
34 W
Max screen dissipation
8 W

Representative of two identical RF-power tetrode sections.

Section 2

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.0045 S
Max plate voltage
1000 V
Max screen voltage
360 V
Max plate dissipation
34 W
Max screen dissipation
8 W

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

  • Maximum Operating Frequency

    175 MHz

  • Maximum Plate Voltage

    1000 V

  • Maximum Plate Dissipation

    34 W

    EachSection

  • RF Output Power

    180 W

    RepresentativePublishedMaximum

  • RF Output Power

    150 W

    ClassC; CCS; 175MHz

  • RF Output Power

    180 W

    ClassC; ICAS; 175MHz

  • Plate Voltage

    1000 V

    ClassC; 175MHz

  • Plate Current

    120 mA

    EachSection; ClassC; ICAS

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

  • Heater voltage Ve [1]

    6.3 V

  • Heater voltage Ve [2]

    12.6 V

  • Heater current Ip [1]

    1.8 A

  • Heater current Ip [2]

    900 mA

  • When the tube

    1 s

  • Temperature of base pin seals = max.,

    180 °C

  • Anode voltage Va = max

    1000 V

  • Anode current Ig = max. 2x1

    10 mA

  • Anode dissipation Wy = max. 2x3

    0 W

  • Anode input power Wia = max. 2x1

    0 W

  • Grids No.2 voltage Vgz,gé = max,

    300 V

  • Grids No.2 dissipation w82:82'= max

    7 W

  • voltage 'V81 = max

    175 V

  • Heater to cathode voltage Vi max,

    100 V

  • Frequency r = 175

    175 Mc/s

  • Anode voltage Vg = 1000

    900 V

  • Grids No.2 voltage Vgo,g0'= 230

    245 V

  • Anode current I = 2x100 2x1

    10 mA

  • Grids No.2 current 182,85 = 11,2

    12.5 mA

  • Grids No.t! current Ig,,gf = 5.7

    5.9 mA

  • Anode 1input power Wiy = 200

    198 W

  • Anode dissipation Wag = 2x27 2x2

    5 W

  • Grids No.2 dissipation Wgo,g0'= 2.5

    3 W

  • Driver output power War = 3.5

    3.5 W

  • Qutput power ¥o = 146

    150 W

  • Useful power in the load L7} = 125

    132 W

  • Anode voltage Va = max

    1000 V

  • Anode current I = max. 2x1

    20 mA

  • Anode dissipation Wag = max. 2x3

    4 W

  • Anode input power ¥y, = max, 2x1

    20 W

  • Erids No.2 voltage . Vgz,sé = max,

    300 V

  • Srids No.2 dissipation Wgzvgf = max

    8 W

  • voltage —Vg1 max

    175 V

  • Heater to cathode voltage Ve = max,

    100 V

  • Frequency T = 175

    175 Mc/s

  • Anode voltage Va = 1000

    900 V

  • Grids No.2 voltage VSQ:SZ' 260

    260 V

  • Grid No.1 voltage VS1

    -85 -85 V

  • Common grids No.1 resistor R51,51‘ 15

    15 kQ

  • Anode current Ig = 2X120 2x1

    20 mA

  • Grids No.2 current Igs,85' = 16.5

    17 mA

  • Grids No.1 current Igi,81'= 5.7

    5.7 mA

  • Anode input power Wig = 240

    216 W

  • Anode dissipation Va = 2x30 2x2

    5 W

  • Grids No.2 dissipation W52,82'= 4.3

    4.5 W

  • Driver output power Har = 3.5

    3.5 W

  • Qutput power Wo 180

    166 W

  • Useful power in the load W = 163

    147 W

  • Anode voltage Va = max. 800

    800 V

  • Anode current Ia = max. 2x90 2x1

    0 mA

  • Anode dissipation Wa = max. 2x21 2x2

    3.5 W

  • Anode input power Wiz = max., 140

    160 W

  • Grids No.2 dissipation W52,82'= max. 5.0

    5.5 W

  • voltage Vg =max. 175

    175 V

  • Heater to cathode voltage Vkf = max. 100

    100 V

  • Frequency f = 175

    175 Mc/s

  • Anode voltage Vg = 750

    800 V

  • Grids No.2 voltage V82.g2' = 250

    225 V

  • Grid No.1 voltage Vg; = -66

    ~-75 V

  • Anode current In = 2x90 2x1

    0 mA

  • Grids No.2 current 152,52' = 10.2

    8.8 mA

  • Anode input power Wig = 135

    160 W

  • Anode dissipation Wg = 2x19 2x2

    1 W

  • Grids No.2 dissipation gy .85 = 2.6

    2 W

  • Driver output power Wr = 3.4

    3 W

  • Output power o = 97

    122 W

  • Useful power in the load W = 85

    107 W

  • Modulation power Wmod = 68

    80 W

  • hlozrez /1

    9 %

  • filozisz 7

    69 %

  • 7201450 /

    3512 ff

  • g,

    250 V

  • 200 400 600

    800 V

  • Vg, V92

    250 V

  • 20 ¥ smssssaassusm {64

    14 A

  • 20 ¥ smssssaassusm {64

    4 A

  • 0 200 400 600

    800 V

  • ‘?Q}\ \

    0 s

  • 1 T F

    7 w

  • Y,

    200 V

  • S35

    400 mA

  • ot PT

    300 mA

  • Ban 014

    4 A

  • 20 02411 LT SESAESANNEENEBAR NN N __54

    3 A

  • 7 B 1962.12.12

    8 C

Capacitance

  • ments except grid No.1 Ca

    3.2 pF

  • elements except anode Cg1

    10.5 pF

  • Anode to grid No.1 Cagq

    < 0.09 PF

Characteristic

  • Mutual conductance S

    4.5 mA