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Voltage Pentode - Remote Cutoff (single) ·Pentode

UF89

Variable-mu or remote-cutoff pentode designed for RF, IF, broadband, or AVC-controlled receiver amplification.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: B9A
Base pins: 9
Nominal heater: 12.6 V / 100 mA

Description

Variable-mu voltage pentode for radio-frequency or intermediate-frequency amplification. The supplied French datasheet was translated to English for descriptive output.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: B9A
Base pins: 9
Nominal heater voltage: 12.6 V
Nominal heater current: 100 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 400000 Ω
Transconductance: 0.0044 S
Max plate voltage: 250 V
Max screen voltage: 250 V
Max plate dissipation: 2.25 W
Max screen dissipation: 0.45 W
Max cathode current: 16.5 mA

Published maximum ratings and typical characteristics promoted from the approved source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1957 Philips Receiving and Amplifying Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Plate Voltage
170 V
Plate Current
12 mA
Screen Voltage
100 V
Screen Current
4.4 mA

Characteristic

Transconductance
4400 µS
Plate Resistance
400000 ohm

Data set 02

1961 Ferranti Technical Handbook

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

Cutoff characteristic
Variable-mu

Application

Application
RF / IF amplifier

Data set 03

1963 Philips Electron Tubes Handbook V1

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

Anode capacitance
5.1 pF
Control-grid capacitance
5.5 pF
Anode-to-control-grid capacitance
- to 0.002 pF
Maximum
Control-grid-to-heater capacitance
0.05 pF

Characteristic

Plate voltage
170 V
Typical
Screen voltage
100 V
Typical
Grid voltage
-1.2 V
Typical
Plate current
12 mA
Typical
Screen current
4.4 mA
Typical
Transconductance
4400 uS
Typical
Plate resistance
0.4 MOhm
Typical
Amplification factor grid2-grid1
21
Typical
Transconductance
3850 uS
RF/IF amplifier; PlateVoltage=200V
Plate resistance
0.55 MOhm
RF/IF amplifier; PlateVoltage=200V

Other

Plate voltage
200 V
RF/IF amplifier
Plate current
11.1 mA
RF/IF amplifier; PlateVoltage=200V
Screen current
3.8 mA
RF/IF amplifier; PlateVoltage=200V

Data set 04

1967 Mullard Receiving and Amplifying Valves

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Vg Z
110 V
CHARACTERISTICS
gm
3.8 mA
CHARACTERISTICS
negati ve bias should be increased to
-2
CHARACTERISTICS
Vg3
0 a
CHARACTERISTICS
gm
3.85 V
CHARACTERISTICS
gm (Vg , =
160 V
CHARACTERISTICS
acce pta ble the negati ve grid bias should be increased to
-2
CHARACTERISTICS
UF8
9
CHARACTERISTICS

Other

V a (b) max
550 V
LIMITING VALUES
V a max
250 V
LIMITING VALUES
Vg
550 V
LIMITING VALUES
Vg
250 V
LIMITING VALUES
*W it h gr id current biasing Rg1_ k max.=
22 W
LIMITING VALUES
VAR IABLE-MU R.F. PENTODE UF8
9
LIMITING VALUES
Vg1eV)
0
LIMITING VALUES
UF8
9
LIMITING VALUES
2982 UF89 gm
9
LIMITING VALUES
Vg l(V)
0 V
LIMITING VALUES
VARIABLE·MU R.F. PENTODE UF8
9
LIMITING VALUES
VARIABLE-MU R.F. PENTODE UF8
9
LIMITING VALUES

Data set 05

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Tension filament ..………eerenenennnnnnnnnennnnnnnnnnmennnenn "Vf
12.6 V
Tension d'anode ……c
250 V
Tension de grille n°2
250 V
Tension entre filament et Cathod@ .…s rasrenmercuse Vfk
150 V

Characteristic

s00 If
100 mA
Tension d'alimentation.….....….….…...…….e YN 100
100 v
Tension d'anode …… … Va 100
100 v
Tension de grille n° 3 …… … V8; 0
0 v
Résistance de grille n° 2 …… Rg 15
0 kΩ
Résistance de cathode ...s Rk 130
160 Ω
Tension de grille n° 1 ……s Vg, -1{| -10 -1,9;
-10 V
Pent@ .….….....cerrrereerennennannnnnnnnnn Ss 3,2 | 0,15 3,3
0.16 mA

Data set 06

1972 Philips Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

HeaterVoltageNominal
12.6 V
Nominal
HeaterCurrentNominal
100 mA
Nominal
Maximum Plate Voltage
250 V
Maximum Screen Voltage
250 V
Maximum Plate Dissipation
2.25 W
Maximum Screen Dissipation
0.45 W
Maximum Cathode Current
16.5 mA

Characteristic

Transconductance
4400 µS
Typical
Amplification Factor
21
Typical
Plate Resistance
400000 ohm
Typical

Data set 07

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

Anode current I, 12 mA
12 A
Anode current I, 12 mA
Transconductance S 4.4 mA/V
4.4 a
Transconductance S 4.4 mA/V
Amplification factor Hgog) 21
21 A
Amplification factor Hgog) 21
Internal resistance R; 400 k2
400 a
Internal resistance R; 400 k2
Heater current If 100 mA
100 a
Heater current If 100 mA
Heater voltage Vs 12.6 V
12.6 a
Heater voltage Vs 12.6 V
Anode to all except grid No.1 Ca(gl) 5.1 pF
5.1 A
Anode to all except grid No.1 Ca(gl) 5.1 pF
Grid No.l to all except anode Cgl(a) 5.5 pF
5.5 a
Grid No.l to all except anode Cgl(a) 5.5 pF
Grid No.l to heater Cglf 0.05 pF
0.05 a
Grid No.l to heater Cglf 0.05 pF
Anode voltage Va 170 Vv
170 A
Anode voltage Va 170 Vv
Grid No.2 voltage Vg2 100 V
2 v
Grid No.2 voltage Vg2 100 V
Grid No.3 voltage Vg3 0 v
3 v
Grid No.3 voltage Vg3 0 v
Anode current Iy 12 mA
12 A
Anode current Iy 12 mA
Grid No.1 voltage Vg, -1.2 vl
1 v
Grid No.1 voltage Vg, -1.2 vl
Grid No.2 current Ig2 4.4 mA
4.4 mA
Grid No.2 current Ig2 4.4 mA
Internal resistance R-1 0.4 MQ
0.4 a
Internal resistance R-1 0.4 MQ
Amplification factor “gZgl 21
21 A
Amplification factor “gZgl 21
Anode voltage, supply voltage Vg
170 A
Anode voltage, supply voltage Vg=Vp 200 170 v
Grid No.3 voltage Vg3 0 0 v
3 v
Grid No.3 voltage Vg3 0 0 v
Grid No.2 resistor RgZ 24 15 k2
2 s
Grid No.2 resistor RgZ 24 15 k2
Cathode resistor Ry 130 130 Q
130 a
Cathode resistor Ry 130 130 Q
Grid No.1 voltage Vgl -1.95 -20 -1.95
1 v
Grid No.1 voltage Vgl -1.95 -20 -1.95 =20 V
Anode current Iq 11.1 - 11.0 - mA
11 A
Anode current Iq 11.1 - 11.0 - mA
Grid No.2 current Ig2 3.8 - 3.9 - mA
3.9 mA
Grid No.2 current Ig2 3.8 - 3.9 - mA
Transconductance S 3.85 0.16 3.8 0.11 mA/V
0.11 a
Transconductance S 3.85 0.16 3.8 0.11 mA/V
Internal resistance Rj 550 - 450 - k@
450 a
Internal resistance Rj 550 - 450 - k@
Equivalent noise resistance Req 4.2 - 4.5 - kR
4.5 v
Equivalent noise resistance Req 4.2 - 4.5 - kR
negative grid bias should be increased to a value of 1.5 V at least
1.5 a
negative grid bias should be increased to a value of 1.5 V at least.
Anode voltage, supply voltage Va
100 A
Anode voltage, supply voltage Va=Vy 100 100 v
Grid No.2 resistor Rg, 15 0 kQ
2 s
Grid No.2 resistor Rg, 15 0 kQ
Cathode resistor Rk~ 130 160 Q
160 a
Cathode resistor Rk~ 130 160 Q
Grid No.l voltage Vgl -1.05 -10 —’l_.9~‘—_10 A%
10 v
Grid No.l voltage Vgl -1.05 -10 —’l_.9~‘—_10 A%

Other

Anode to grid No.1 Cagl max. 0.002 pF
2 mA
Anode to grid No.1 Cagl max. 0.002 pF