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Voltage Radio Detector Converter ·Diode-Diode-Pentode

UBF80

Series-heater double-diode variable-mu pentode for RF/IF amplification, detection, and automatic gain control. The pentode provides controllable gain while paired diodes handle detector and control rectification.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
-
Socket code
B9A
Base pins
9
Nominal heater
19 V / 100 mA

Description

Double-diode variable-mu pentode for detection and intermediate-frequency amplification. The supplied French datasheet was translated to English for descriptive output.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B9A
Base pins
9
Nominal heater voltage
19 V
Nominal heater current
100 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances
Max plate voltage
300 V
Rectifier peak inverse voltage
350 V
Rectifier nominal output current
0.8 mA

Detector diode section; repeated identical diode systems compressed.

Section 2

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Second physical detector diode section added in approved reconciliation.

Section 3

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1400000 Ω
Transconductance
0.0022 S
Max plate voltage
300 V
Max screen voltage
250 V
Max plate dissipation
2 W
Max screen dissipation
0.3 W
Max cathode current
10 mA

Published ratings/characteristics promoted where clearly stated; repeated identical sections compressed where applicable.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1953 RFT Rundfunk Technik

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristics

  • Heater voltage

    19 V

    Published nominal value

  • Heater current

    100 mA

    Published nominal value

  • Transconductance

    2200 µS

    Published operating characteristic

Other

  • Maximum plate dissipation

    1.7 W

    Published maximum rating

SECTION 3

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    300 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    300 V

  • Maximum Plate Dissipation

    1.5 W

  • Maximum Screen Dissipation

    0.3 W

Data set 02

1957 Philips Receiving and Amplifying Tubes

Published operating points and test conditions from this source.

SECTION 3

Pentode

Characteristics

  • Cutoff characteristic

    Variable-mu

Application

  • Application

    RF / IF amplifier

Data set 03

1963 Philips Electron Tubes Handbook V1

Published operating points and test conditions from this source.

SECTION 1

Diode

Other

  • Maximum inverse voltage

    350 V

  • Maximum average diode current

    0.8 mA

  • Maximum peak diode current

    5 mA

SECTION 3

Pentode

Other

  • Plate voltage

    170 V

    RF/IF amplifier

  • Screen voltage

    85 V

    RF/IF amplifier

  • Plate current

    5 mA

    RF/IF amplifier

  • Screen current

    1.75 mA

    RF/IF amplifier

  • Maximum plate voltage

    250 V

  • Maximum screen voltage

    250 V

  • Maximum plate dissipation

    2 W

Characteristic

  • Transconductance

    2200 uS

    RF/IF amplifier

  • Plate resistance

    0.9 Mohm

    RF/IF amplifier

Data set 04

1967 Mullard Receiving Tubes for Maintenance

Published operating points and test conditions from this source.

SECTION 1

Diode

Other

  • ~

    100 mA

    Published in approved UBF80.pdf target datasheet; Section2

  • c al d-g l <

    0.0008 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • CU '(/ _ 11 <

    0.2 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • CU" <l_ gl <

    0.001 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • Ca" d _ a <

    0.05 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • Ca_gl <

    0.0025 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • Co u t

    4.9 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • Cl n

    4.2 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • C gl ~ h <

    0.07 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • Ca1tL k

    2.2 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • Ca'I Ll_k

    2.35 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • c al d_ a" d <

    0.35 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • Ca' d _ h <

    0.02 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • CI1" <1._ h <

    0.005 pF

    Published in approved UBF80.pdf target datasheet; Section2

  • Vg2 max. (In<

    2 mA

    Published in approved UBF80.pdf target datasheet; Section2

  • Vg2 max. (la =

    5 mA

    Published in approved UBF80.pdf target datasheet; Section2

  • I k max

    10 mA

    Published in approved UBF80.pdf target datasheet; Section2

  • lad max

    0.8 mA

    Published in approved UBF80.pdf target datasheet; Section2

  • iad(Pk) max

    5 mA

    Published in approved UBF80.pdf target datasheet; Section2

  • input vo ltage , Vln. is not less th an

    25 mV

    Published in approved UBF80.pdf target datasheet; Section2

  • input vo ltage , Vln. is not less th an 25 mV for an ou tpu t of

    50 mW

    Published in approved UBF80.pdf target datasheet; Section2

SECTION 3

Pentode

Other

  • ~

    100 mA

    Published in approved UBF80.pdf target datasheet; Section1

  • c al d-g l <

    0.0008 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • CU '(/ _ 11 <

    0.2 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • CU" <l_ gl <

    0.001 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • Ca" d _ a <

    0.05 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • Ca_gl <

    0.0025 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • Co u t

    4.9 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • Cl n

    4.2 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • C gl ~ h <

    0.07 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • Ca1tL k

    2.2 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • Ca'I Ll_k

    2.35 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • c al d_ a" d <

    0.35 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • Ca' d _ h <

    0.02 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • CI1" <1._ h <

    0.005 pF

    Published in approved UBF80.pdf target datasheet; Section1

  • Vg2 max. (In<

    2 mA

    Published in approved UBF80.pdf target datasheet; Section1

  • Vg2 max. (la =

    5 mA

    Published in approved UBF80.pdf target datasheet; Section1

  • I k max

    10 mA

    Published in approved UBF80.pdf target datasheet; Section1

  • lad max

    0.8 mA

    Published in approved UBF80.pdf target datasheet; Section1

  • iad(Pk) max

    5 mA

    Published in approved UBF80.pdf target datasheet; Section1

  • input vo ltage , Vln. is not less th an

    25 mV

    Published in approved UBF80.pdf target datasheet; Section1

  • input vo ltage , Vln. is not less th an 25 mV for an ou tpu t of

    50 mW

    Published in approved UBF80.pdf target datasheet; Section1