Data set 01
1957 Philips Receiving and Amplifying Tubes
Published operating points and test conditions from this source.
SECTION 1
Pentode
Characteristics
Cutoff characteristic
Variable-mu
Application
Application
RF / IF / AF amplifier
Voltage Radio Detector Converter ·Diode-Pentode
UAF41
Series-heater diode variable-mu pentode for RF/IF amplification and signal detection. The pentode provides controlled gain for automatic gain control while the diode handles detector or control rectification.
Directly heatedCold cathodeCommon cathodeDissimilar
- Sections
- 2
- Base
- -
- Socket code
- RIMLOCK8
- Base pins
- 8
- Nominal heater
- 12.6 V / 100 mA
Description
Variable-mu diode-pentode for RF, IF, or AF amplifier service.
Socket description
Rimlock 8-contact base
General specifications
Tube and section characteristics
Properties common to every published source and operating point.
Heater and base
- Base
- -
- Socket code
- RIMLOCK8
- Base pins
- 8
- Nominal heater voltage
- 12.6 V
- Nominal heater current
- 100 mA
- Parallel heater voltage
- -
- Parallel heater current
- -
- Series capable
- No
Terminal pinout
Electrical assignments shared by every tube using this base designation.
No verified pinout is recorded for this base designation.
Section ratings
2 physical sections, each with unique specifications.
Section 1
Pentode
X-ray radiationInterelectrode capacitances
- Plate resistance
- 900000 Ω
- Transconductance
- 0.0018 S
- Max plate voltage
- 250 V
- Max screen voltage
- 250 V
- Max plate dissipation
- 2 W
- Max screen dissipation
- 0.3 W
- Max cathode current
- 10 mA
Variable-mu pentode section.
Section 2
Diode
X-ray radiationInterelectrode capacitances
- Max plate voltage
- 350 V
- Max cathode current
- 0.8 mA
Detector diode section.
Source-dependent data
Operating conditions by source
Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.
Data set 02
1963 Philips Electron Tubes Handbook V1
Published operating points and test conditions from this source.
SECTION 1
Pentode
Other
Plate voltage
170 V
RF/IF amplifier
Screen voltage
85 V
RF/IF amplifier
Plate current
5 mA
RF/IF amplifier
Screen current
1.5 mA
RF/IF amplifier
Maximum plate voltage
250 V
Maximum screen voltage
250 V
Maximum plate dissipation
2 W
Characteristic
Transconductance
1800 uS
RF/IF amplifier
Plate resistance
0.9 Mohm
RF/IF amplifier
SECTION 2
Diode
Other
Maximum inverse voltage
350 V
Maximum average diode current
0.8 mA
Maximum peak diode current
5 mA
Data set 03
1999 Philips E-Z
Published operating points and test conditions from this source.
SECTION 1
Pentode
Characteristic
Input capacitance
4 pF
Pentode
Output capacitance
6.5 pF
Pentode
Other
Anode-grid capacitance
0.002 pF
Pentode
Typical transconductance
1800 µS
RFIFAmplifier