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Power - Triode (over 1000V 100W) ·Triode

TYS53000

Silica-envelope high-power RF triode for self-excited RF-heating oscillators and transmitting or industrial amplifiers. Approximately 3.5 kW plate dissipation and 6 kV capability support substantial industrial RF generation.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
20.5 V / 26 A

Description

Silica-envelope RF power triode rated for 3.5 kW plate dissipation, intended for self-excited RF heating oscillators and transmitting/industrial RF amplifiers.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
20.5 V
Nominal heater current
26 A
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
2100 Ω
Transconductance
0.015 S
Amplification factor
32
Max plate voltage
6000 V
Max plate dissipation
3500 W
Max cathode current
2.8 A

Promoted values are mapped from the supplied datasheet; additional published ratings, characteristics, capacitances and operating points are retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Triode

Capacitance

  • Grid-to-plate capacitance

    35 pF

  • Plate-to-filament capacitance

    3.5 pF

  • Grid-to-filament capacitance

    25 pF

Characteristics

  • Transconductance

    15000 uS

    Va=5kV;Ia=800mA

  • Amplification factor

    32 ratio

    Va=5kV;Ia=800mA

  • Plate resistance

    2100 Ohm

    Va=5kV;Ia=800mA

Other

  • Maximum frequency

    20 MHz

    ReducedPlateVoltageAt20MHz

  • Plate voltage

    6000 V

    ClassC;Amplifier;f=3MHz

  • Plate current

    2.33 A

    ClassC;Amplifier;f=3MHz

  • Grid current

    350 mA

    ClassC;Amplifier;f=3MHz

  • Efficiency

    75 %

    ClassC;Amplifier;f=3MHz

  • RF output power

    10.5 kW

    ClassC;Amplifier;f=3MHz

  • RF output power

    6.3 kW

    ClassC;DielectricHeater;f=20MHz

  • RF output power

    9.1 kW

    ClassC;InductionHeater;f=450kHz