TYS2250

Silica-envelope RF power triode for self-excited oscillators and RF amplifiers in industrial heating and transmitting equipment. Moderate plate dissipation and multi-kilovolt operation support rugged industrial RF generation.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 6.5 V / 12 A

Description

Silica-envelope RF power triode for self-excited oscillator and RF amplifier service in industrial heating and transmitting equipment.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 6.5 V
Nominal heater current: 12 A
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances

Plate resistance: 3000 Ω
Transconductance: 0.0035 S
Amplification factor: 10.5
Max plate voltage: 2500 V
Max plate dissipation: 250 W
Max cathode current: 500 mA

Promoted values are mapped from the supplied datasheet; additional published ratings, characteristics, capacitances and operating points are retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Triode

Capacitance

Grid-to-plate capacitance
1 pF
Grid-to-filament capacitance
5 pF
Plate-to-filament capacitance
1 pF

Characteristics

Transconductance
3500 uS
Va=2kV;Ia=80mA
Amplification factor
10.5 ratio
Va=2kV;Ia=80mA
Plate resistance
3000 Ohm
Va=2kV;Ia=80mA

Other

Maximum frequency
75 MHz
ReducedRatingsAbove75MHz
Plate voltage
2000 V
ClassC;Amplifier;f=75MHz
Plate current
400 mA
ClassC;Amplifier;f=75MHz
Grid current
50 mA
ClassC;Amplifier;f=75MHz
RF output power
550 W
ClassC;Amplifier;f=75MHz
Efficiency
69 %
ClassC;Amplifier;f=75MHz