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Power - Tetrode (NOT beam) ·Tetrode

RS2012CL

Forced-air-cooled coaxial tetrode for approximately 10 kW-class SSB communications transmitters to 110 MHz.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
10 V / 83 A

Description

Coaxial metal-ceramic tetrode for frequencies up to 110 MHz, forced-air-cooled or water-cooled; particularly suitable for single-sideband communications transmitters up to 10 kW with grid-current Forced-air-cooled version Water-cooled version The radiator and the terminals are of concentric design with the following diameters:

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
10 V
Nominal heater current
83 A
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.07 S
Amplification factor
8.4
Max plate voltage
9000 V
Max screen voltage
1100 V
Max screen dissipation
200 W
Max grid dissipation
70 W
Max cathode current
6 A

Maximum ratings promoted from published rating tables; additional condition-specific values preserved in parameters.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Siemens

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Characteristics

  • Amplification factor

    8.4

  • Transconductance

    70000 µS

  • Emission current

    35 A A

  • Amplification factor of screen grid

    8,4

  • UG2 = 600

    1000 V, V

  • Transconductance

    70 mA/V mA/V

  • I A = 2,5

    3,5 A A

Other

  • Heater voltage

    10 V V

  • Heater current

    ≈ 83 A A

  • Frequency

    110 MHz MHz

  • Anode voltage (dc)

    7,5 kV kV

  • Screen grid voltage (dc)

    1000 V V

  • Control grid voltage (dc)

    – 250 V V

  • Cathode current (dc)

    4,0 A A

  • Peak cathode current

    35 A A

  • Anode dissipation (RS 2012 CL)

    12 kW kW

  • Anode dissipation (RS 2012 CJ)

    18 kW 5) kW

  • Screen grid dissipation

    200 W W

  • Control grid dissipation

    70 W W

  • Frequency

    ≤ 110 50 ≤ 110 MHz MHz

  • Output power

    11 15+0,26 3) 10,8+0,23 3) kW 1) kW

  • Anode voltage (dc)

    6,0 9,0 7,0 kV kV

  • Screen grid voltage (dc)

    800 800 800 V V

  • Control grid voltage (dc)

    – 120 – 125 – 120 V 4) V

  • Peak control grid voltage (ac)

    140 140 130 V V

  • Anode current (dc)

    2,9 2,5 2,3 A A

  • Screen grid current (dc)

    130 120 120 mA mA

  • Control grid current (dc)

    70 40 10 mA mA

  • Anode input power

    17,5 22,7 16 kW A

  • Drive power

    9,0 2) 6 + 260 3) 1 + 230 3) W 1) W

  • Anode dissipation

    6,5 7,7 5,2 kW kW

  • Screen grid dissipation

    104 96 110 W W

  • Control grid dissipation

    1,0 1,0 0,1 W W

  • Efficiency

    63 66 68 %

  • Transmitter Tetrode

    2012 C

  • Frequency

    30 MHz MHz

  • Anode voltage (dc)

    6,0 kV kV

  • Screen grid voltage (dc)

    750 V V

  • Control grid voltage (dc)

    – 250 V V

  • Cathode current (dc)

    4,0 A A

  • Peak cathode current

    35 A A

  • Anode dissipation (RS 2012 CL)

    12 kW kW

  • Anode dissipation (RS 2012 CJ)

    18 kW 6) kW

  • Screen grid dissipation

    200 W W

  • Control grid dissipation

    70 W W

  • Frequency

    ≤ 30 ≤ 30 MHz MHz

  • Carrier power

    12 6,0 kW 1) kW

  • Anode voltage (dc)

    6,0 5,0 kV kV

  • Screen grid voltage (dc)

    700 500 V V

  • Control grid bias (dc), fixed

    – 90 – 70 V V

  • Control grid resistance

    500 470 Ω Ω

  • Control grid voltage (dc)

    – 220 – 150 V V

  • Peak control grid voltage (ac)

    280 190 V V

  • Anode current (dc)

    2,4 1,45 A A

  • Screen grid current (dc)

    200 120 mA mA

  • Control grid current (dc)

    260 170 mA mA

  • Anode input power

    14,4 7,3 kW A

  • Drive power

    64 30 W 1) W

  • Anode dissipation

    2,4 1,3 kW 2) kW

  • Screen grid dissipation

    140 60 W W

  • Control grid dissipation

    7,0 5,0 W W

  • Efficiency

    83 82 %

  • Anode load resistance

    1,2 1,7 kΩ kΩ

  • Modulation factor

    100 100 %

  • Peak screen grid voltage (ac)

    600 350 V 3) V

  • Modulation power

    7,2 3,7 kW kW

  • Control grid current (dc)

    400 240 mA 4) mA

  • Drive power

    100 40 W 1) 4) W

  • Anode dissipation at modulation

    3,6 2,0 kW 5) kW

  • Screen grid dissipation at modulation

    170 75 W 5) W

  • tion the anode dissipation increases

    1,5 times the power dissipation stated for the carrier value.

  • Transmitter Tetrode

    2012 C

  • Anode voltage (dc)

    7,0 kV kV

  • Screen grid voltage (dc)

    1100 V V

  • Control grid voltage (dc)

    – 200 V V

  • Cathode current (dc)

    4,0 A A

  • Peak cathode current

    35 A A

  • Anode dissipation (RS 2012 CL)

    12 kW kW

  • Anode dissipation (RS 2012 CJ)

    18 kW 1) kW

  • Screen grid dissipation

    200 W W

  • Control grid dissipation

    70 W W

  • 20 kW

    10 kW kW

  • Output power

    0 16 0 8 kW kW

  • Anode voltage (dc)

    6 6 5 5 kV kV

  • Screen grid voltage (dc)

    1000 1000 800 800 V V

  • Control grid voltage (dc)

    – 130 – 130 – 110 – 110 V V

  • between 2 tubes

    0 220 0 180 V V

  • Anode current (dc)

    2 × 0,5 2 × 2,4 2 × 0,3 2 × 1,5 A A

  • Screen grid current (dc)

    0 2 × 90 0 2 × 30 mA mA

  • Anode input power

    2×3 2 × 14,4 2 × 1,5 2 × 7,5 kW A

  • Anode dissipation

    2×3 2 × 6,4 2 × 1,5 2 × 3,5 kW kW

  • Screen grid dissipation

    0 2 × 90 0 2 × 24 W W

Capacitance

  • Cathode/control grid

    ≈ 76 pF pF

  • Cathode/screen grid

    ≈ 5,50 pF pF

  • Cathode/anode

    ≈ 0,07 pF 1) pF

  • Control grid/screen grid

    ≈ 122 pF pF

  • Control grid/anode

    ≈ 0,75 pF 1) pF

  • Screen grid/anode

    ≈ 22 pF pF

  • Transmitter Tetrode

    2012 C

  • Transmitter Tetrode

    2012 C