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Power - Tetrode (NOT beam) ·Tetrode

RS1032C

Siemens UHF transmitting tetrode with 10 kW plate dissipation for television broadcast service around 600–790 MHz.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
6.3 V / 70 A

Description

Die RS 1032 C ist eine forciert luftgekithite Tetrode in Metall-Keramik- Technik mit konzentrisch ausgebildeten Schirmgitter-, Steuergitter- und Kathodendurchftthrungen. Sie ist besonders fur die Besttickung von Fern- sehsendern in Steuergitter-Schirmgitterbasisschaltung geeignet. Ihre Anodenverlustlieistung betragt 10 kW.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
6.3 V
Nominal heater current
70 A
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.038 S
Amplification factor
6
Max plate dissipation
10000 W

Ratings, characteristics, and operating tables audited semantically; repeated identical systems represented once where applicable.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Siemens

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

  • Ug = 4,1 ' Ne=530

    -

  • Uag = 5,2 kv

    -

  • Ug2gi = 800 v

    -

  • Uxkg1 = 300 v

    -

  • f = 600 790 MHz

    -

  • Uagi = 5 5 kv

    -

  • Ugagi = 700 700 v

    -

  • Ukgt = 140 140 v

    -

  • Uagi = 4,7 kv

    -

  • Ugogt = 800 v

    -

  • Ugegi = 300 v

    -

  • Qg2 = 120 w

    -

  • Qg1 = 30 w

    -

  • f = 790 790 790 MHz

    -

  • Uag1 = 4,5 3 4,5 kV

    -

  • Ug2gi = 640 640 640 \

    -

  • Ukgt = 140 140 140 v

    -

  • ring fiilr hohe Frequenzen einer intensiven Kthlung bedlirfen, ist es zweckmi8ig,

    -

  • leistung von 530 Watt ergibt, Dabei darf die Hochfrequenzansteuerung nicht an

    -

  • SIMENS Ukgt = f (Uagy) |a = Parameter 1032 C

    -

  • -20 q = 10

    -

  • 1032 C Ukg1 = f (Uag1) jgz = Parameter

    -

  • +100 ! / // Ug2g1 = 700V

    -

  • U = f(Upnqq) |41 = Parameter

    -

Current

  • I = 130 A

    -

  • Ie = 20 A bei U, = Upgp = Ugy = 200 V

    -

  • I = 3,6 Al

    -

  • I = 4 A

    -

  • Iksp = 20 A

    -

  • Iy = 2,4 1,9 1,2 A

    -

  • 15 Iy = Fllg) \\\ 06 15 [ Ugg0 =00V _

    -

  • f(Ukg1) Igz = f(Uag1)

    -

  • -100 N - Ia=TGA____

    -

  • -80 \ = Io = 16AT—

    -

  • v Io=20816 12 10] [og 06 05

    -

  • Ig2 = Parameter

    -

  • ! Ig =32A7||

    -

  • Ukg1 =f (Uag1) Ig1 = Parameter

    -

  • Ig1 = Parameter

    -

Characteristic

  • s = 38 mA/V bei U, = 2 KV, Ug, = 450 V

    -

Capacitance

  • Ckg1 = 53. pF

    -

  • Cra = 0,09 pF 2)

    -

  • Cgza = 21 pF

    -