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Power - Triode ·Triode

RS1016

Siemens transmitting power triode for professional RF service. Approximately 450 W plate dissipation provides medium-power amplifier and oscillator capability for communications and industrial high-frequency equipment.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
10 V / -

Description

Siemens triode datasheet.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
10 V
Nominal heater current
-
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Transconductance
0.0045 S
Max plate dissipation
450 W

Ratings, characteristics, and operating tables audited semantically; repeated identical systems represented once where applicable.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Siemens

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Bei Frequenzen > 50 MHz und bei voller Ausnutzung der Grenzwerte ist ein

    -

  • Ug = 10 v

    -

  • n = 28 bei Uy = 3,5kV; I; =125 mA

    -

  • Ug = -350 - -300 -250 ~200 v

    -

  • Ugs = 580 520 460 405 \

    -

  • Qg = 50 w

    -

  • Ua = 4000 3500 3000 2500 v

    -

  • Ugs = 580 520 460 405 v

    -

  • Qa = 450 450 425 390 w

    -

  • f = 100 100 100 100 MHz

    -

  • Ugs = 580 520 460 405 v

    -

  • Qg = 50 w

    -

  • f = 100 MHz

    -

  • Ugr = 3400 v 2)

    -

  • Ug = -500 v

    -

  • Qg = 50 w

    -

  • f = 100 100 MHz

    -

  • Utr = 3400 2900 v 2)

    -

  • Uasp = 5700 v

    -

  • Ugr = 4000 v o2

    -

  • Uy = -320 v

    -

  • Qg = 50 w

    -

  • Qg = 50 w

    -

  • Ug = -135 -114 v

    -

  • Qg = 50 w

    -

  • Ug = -94 -75 v

    -

  • Qg = 2x210 2x345 2x175 2x387 w

    -

  • Ua = 4000V

    -

  • Ua = 3000V mA

    -

  • Uy =—135V

    -

Current

  • Ig = 9,9 A

    -

  • Ie = 5 A

    -

  • Ig = 115 mA

    -

  • Iy = 535 535 535 535 mA

    -

  • Ig1 = 115 115 115 115 mA

    -

  • I = 650 mA

    -

  • Iksp = 5 A

    -

  • Ig = 115 mA

    -

  • I = 115 115 115 115 mA

    -

  • I = 115 mA

    -

  • I = 550 mA

    -

  • Ieap = 5 A

    -

  • Ig = 115 mA

    -

  • Ig = 85 mA

    -

  • I = 650 mA

    -

  • Iksp = 5 A

    -

  • Iy = 535 450 mA

    -

  • Ig = 115 100 mA

    -

  • I = 575 mA

    -

  • Iksp = 5 A

    -

  • I = 700 mA

    -

  • Iksp = 5 A

    -

  • Ig = 130 mA

    -

  • Ik = 700 mA

    -

  • Iksp = 5 A

    -

  • Ig = 130 mA

    -

  • Ig = 0 2x130 0 2x126 mA

    -

  • Iy Igy =1(Uy)

    -

Characteristic

  • S = 4,5 mA/V bei U, =3,5kV; I,=125mA

    -

Capacitance

  • Cga = 7,0 pF

    -