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Power - Tetrode (NOT beam) ·Tetrode

RS1007

Radiation-cooled transmitting tetrode for communications, electromedical equipment, and industrial high-frequency generators. Its heavy filament supports substantial RF power.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
5 V / 6.5 A

Description

Strahlungsgekiihite Tetrode fir Nachrichtentechnik, Elektromedizin und indu- strielle HF-Gerite.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
5 V
Nominal heater current
6.5 A
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Ratings, characteristics, and operating tables audited semantically; repeated identical systems represented once where applicable.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Siemens

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

  • fur Frequenzen bis 220 MHz

    -

  • Rdhre mit Frequenzen oberhalb 50 MHz ist ein schwacher Luftstrom auf die

    -

  • Ug = 5 v

    -

  • ] = 2,2 mA/V, beiU,=3KkV; Uga=400V; I, =40 mA

    -

  • Ug2 = 400 400 400 \'

    -

  • Qg2 = 14 14 14 w

    -

  • Ug2 = 350 350 350 v

    -

  • Ugt = -50 -50 -50 v

    -

  • Ugts = 50 55 65 \s

    -

  • Qg2 = 0,35 0,35 0,52 w

    -

  • Ug2 = 400 400 400 v

    -

  • Qg2 = 20 20 20 w

    -

  • Ugt = -500 -500 -500 v

    -

  • f = 120 120 120 MHz

    -

  • Ua = 2500 2000 1500 v

    -

  • Ug2 = 350 350 300 v

    -

  • Ugs = -210 -220 -150 v

    -

  • Ugts = 380 390 250 v

    -

  • Qg2 = 10,5 11,5 10 w

    -

  • Ugzs = 300 300 255 v

    -

  • Rs 1007 HOCHFREQUENZVERSTARKER SIEMENS

    -

  • Ua = 3000 v

    -

  • Ugz = 660 v

    -

  • Ug1 = -500 v

    -

  • Qg2 = 20 w

    -

  • f = 120 120 MHz

    -

  • Ugl = 600 600 v

    -

  • Ug1 = -108 -103 v

    -

  • Ugis = 0 108 108 0 103 103 v

    -

  • UgZ = 660 v

    -

  • Ug1 = -500 v

    -

  • Ugz = 600 600 v

    -

  • Ugy = -99 -100 v

    -

  • Ugts = o 99 99> 7 o 100 100 v

    -

  • Qg2 = 0,6 16,2 6,6 0,6 9,6 4,8 w

    -

  • Ugz = 600 v

    -

  • Qg2 = 20 W je Rihre

    -

  • Ugy = -500 v

    -

  • Ugz = 600 600 600 v

    -

  • Ugt = -97 -95,5 -94 v

    -

  • Qg2 = 2x0, 1 \/Zx7,8, 2x0, 1 vzx7,z, 2x0,1 2x8,1 w

    -

  • Ugp = 400 v

    -

  • Ugy = -500 v

    -

  • Ua = 2500 2000 41500 v

    -

  • Ugz = 350 350 350 v

    -

  • Ugy = -51 -50 -48 v

    -

  • 5 Ug,=+200V Ugy= Parameter

    -

  • 15 Uy=+200V]

    -

  • ] Ugy = 30V

    -

  • I, W Ugr= #+ 200V

    -

  • —50 Ugy = 350V

    -

  • Ua = 3000V Ug

    -

  • 200 Ugy= 350V Ug2 350 Vv = 3OV N 10

    -

  • U = -50V Ug,= -50V = 50V

    -

  • . Ugz = 3?0 v

    -

Current

  • If = 6,5 A

    -

  • ig2 = 1 1 1,5 mA

    -

  • Iy = 4,5 4 4

    -

  • Ig1 = 15 15 15 mA

    -

  • Ig2 = 30 33 33 mA

    -

  • Igq = 4,5 5 10 mA

    -

  • I = 225 mA

    -

  • Ig2 = 1 27 11 1 16 8 mA

    -

  • I91=0

    -

  • Ia = 225 mA je Rbhre

    -

  • I = 2x0, 1 2x13 2x0,1 2x12 2x0,15 2x13,5 mA

    -

  • IgZ = 2x0, 1 2x18 2x0,15 2x32 2x0,25 2x42 mA

    -

  • Ig1 =1 (Ua)

    -

  • mA T 7 [ | I = f(Ug)

    -

  • 705 . A025 Igy=01A

    -

  • 2 Réhren in Gegentaktschaltung, Ig1 =0

    -