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Power - Tetrode (NOT beam) ·Tetrode

RS1002A

Siemens directly heated transmitting tetrode with a heavy five-volt filament. Available manufacturer material supports substantial RF power service.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
5 V / 14.5 A

Description

Siemens tetrode datasheet.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
5 V
Nominal heater current
14.5 A
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.004 S
Amplification factor
5.1

Ratings, characteristics, and operating tables audited semantically; repeated identical systems represented once where applicable.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Siemens

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

  • Ug = 5V

    -

  • Ugz = 600 V ng = 35 w

    -

  • Ug = -500 V Qgt = 10 W

    -

  • f = 140 110 MHz

    -

  • Ug2 = 500 500 \4

    -

  • Ug1 = -170 -470 v

    -

  • Ugits = 240 235 v

    -

  • Qa = 280 225 w

    -

  • Qg2 = 8 8,5 w

    -

  • Qg1 = 0,4 0,3 w

    -

  • Uz = 600 v Qg = 35w

    -

  • Ugt = -500 v Qg = 10w

    -

  • Uz = 500 500 500 v

    -

  • Ugts = 305 308 305 v

    -

  • Q2 = 18 19 20 w

    -

  • Ugzs = 400 400 400 v 3)

    -

  • Ugz = 600 v ng = 35 w

    -

  • Ug = -500 V Qg = 10 w

    -

  • f = 30 MHz

    -

  • Ug2 = 500 \'

    -

  • Ugi = -225 v

    -

  • Ugts = 308 v

    -

  • Ugz = 850 vV Qg2 = 35 w

    -

  • Ugy = -500 V Qg1 10 w

    -

  • Uy = 4000 3500 3000 \'Z

    -

  • Ugz = 705 750 810 v

    -

  • Ugy = -130 -135 -140 \'s

    -

  • Ugis =~ 0 130 0 135 0 140 \'s

    -

  • Qg2 = 0 7 5 0 9 6,3 0 12 8,5 w

    -

  • Uge = goo v ) Qg = 35w

    -

  • Ug1 = -500 v Qg1 = 10 w

    -

  • Ua = 4000 3500 v

    -

  • Ugz = 750 750 v

    -

  • Uy = -150 -145 v

    -

  • Upz = goo v 1 Qg2 = W

    -

  • Ugt = -500 Vv Qg1 = 10 w

    -

  • Ugz = 750 750 v

    -

  • Ugy = -137 -130 v

    -

  • Qa = 2x240 2x400 2x366 2x370 w

    -

  • Q2 = 0 2x10, 25 0 2x8,7 W

    -

  • Ugz == 800 v 1) ng == 35 w

    -

  • Ugy = -500 v Qg1 = 10 w

    -

  • Ugz = 500 500 v

    -

  • U = -90 -85 v

    -

  • Uga = goo v 1) Qg2 = 35 w

    -

  • Ug1 = -500 v Qg1 = 10 w

    -

  • Ua = 3000 2500 v

    -

  • Ug2 = 500 500 v

    -

  • Uy = -80 -75 v

    -

  • \ Ugy= 300 V 1 225

    -

  • 3 Ugy = Parameter [ 175

    -

  • U92 = 300V

    -

Current

  • Hg2gt = 5,1 bei U, = 2,5 kV; Ug2 = 500 v; I3 =100 mA

    -

  • = 2,5 kV; Ugz =500 Vi I =100

    -

  • I = 480 mA Ikep = 2,6 A

    -

  • I = 270 250 mA

    -

  • Ig2 = 16 17 mA

    -

  • Iyt = 9,5 9 mA

    -

  • I = 405 mA Igp = 2,6 A

    -

  • Igz = 30 mA

    -

  • Ik = 480 mA Iksp = 2,6 A

    -

  • Iz = 0 1C 7 0 12 8,4 0 15 10,5 mA

    -

  • I = 480 mA Ingp = 2,6 A

    -

  • Igz = 0 2x15 0 2x13,5 mA

    -

  • I = 480 maA Tap = 2,6 A

    -

  • Ig2 = 0 2x11 0 2x11,6 mA

    -

  • I = 480 mA Ixsp = 2,6 A

    -

  • Ia = 2x80 2x319 2x80 2x350 mA

    -

  • Ig2 = 0 2x20 0 2x20 mA

    -

  • Ig1 = 0 2x6 0 2x6,5 mA

    -

  • Ik = 480 mA Iksp = 2,6 A

    -

  • Ig2 = 0 2x20 0 2x30 mA

    -

  • Ig4 = 0 2x6,5 0 2x7 mA

    -

  • i =5

    -

  • Ig2 = f(Uqg)

    -

  • ROHREN la =1(Uy) Igi =1(Uy,)

    -

Characteristic

  • s = 4mA/V bei U,

    -

Capacitance

  • Ce = 12,7 pF

    -

  • Ca = 4,9 pF

    -

  • Cg1a = 0,12 pF

    -