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Power - Tetrode (NOT beam) ·Tetrode

QQV0325

UHF power double tetrode designed for VHF/UHF amplification and frequency multiplication to approximately 600 MHz. Two power sections provide compact high-frequency operation.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 6.3 V / 1.3 A

Description

UHF power double tetrode for VHF/UHF amplifier and frequency-multiplier service to 600 MHz.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 6.3 V
Nominal heater current: 1.3 A
Parallel heater voltage: 6.3 V
Parallel heater current: 1.3 A
Series capable: Yes

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances

Transconductance: 0.0025 S
Max plate voltage: 750 V
Max screen voltage: 250 V
Max plate dissipation: 12.5 W

Two electrically similar RF tetrode sections; represented once under identical-section compression.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Other

Maximum operating frequency
600 MHz
RF operating frequency
180 MHz
ClassC
RF plate voltage
700 V
ClassC
RF screen voltage
250 V
ClassC
RF control-grid voltage
-65 V
ClassC
RF plate current per section
60 mA
ClassC
RF output power
67 W
ClassC
RF operating frequency
470 MHz
ClassC
RF plate voltage
500 V
ClassC
RF screen voltage
250 V
ClassC
RF control-grid voltage
-55 V
ClassC
RF plate current per section
60 mA
ClassC
RF output power
38 W
ClassC
RF operating frequency
600 MHz
ClassC
RF plate voltage
400 V
ClassC
RF screen voltage
250 V
ClassC
RF control-grid voltage
-50 V
ClassC
RF plate current per section
59 mA
ClassC
RF output power
22 W
ClassC
RF operating frequency
475 MHz
ClassC,FrequencyMultiplier
RF plate voltage
300 V
ClassC,FrequencyMultiplier
RF screen voltage
250 V
ClassC,FrequencyMultiplier
RF control-grid voltage
-175 V
ClassC,FrequencyMultiplier
RF plate current per section
50 mA
ClassC,FrequencyMultiplier
RF output power
10 W
ClassC,FrequencyMultiplier
Base-pin temperature maximum
180 C
Bulb/anode-seal temperature maximum
250 C

Capacitance

Plate-grid capacitance per section
0.04 pF
Push-pull input capacitance
4.4 pF
PushPull
Push-pull output capacitance
1.6 pF
PushPull
Grid-to-all capacitance per section
7.5 pF
Plate-to-all capacitance per section
2.6 pF

Characteristics

Transconductance
2.5 mA/V
Grid1-to-grid2 amplification factor
8

Application

Application
RF power amplifier / oscillator / frequency multiplier