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Power - Beam (NOT sweep) ·BeamPower

QQV0320A

Double beam tetrode designed for RF power, frequency-multiplier, and AF modulator service, with operation extending to approximately 600 MHz.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 6.3 V / 1.3 A

Description

Beam-power double tetrode for RF power, frequency-multiplier, and AF modulator service to 600 MHz.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 6.3 V
Nominal heater current: 1.3 A
Parallel heater voltage: 6.3 V
Parallel heater current: 1.3 A
Series capable: Yes

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Beam Power

X-ray radiationInterelectrode capacitances

Transconductance: 0.0025 S
Amplification factor: 8
Max plate voltage: 600 V
Max screen voltage: 300 V
Max plate dissipation: 10 W
Max screen dissipation: 1.5 W
Max grid dissipation: 0.5 W
Max cathode current: 55 mA

Two electrically similar RF tetrode sections; represented once under identical-section compression.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Other

Maximum operating frequency
600 MHz
RF operating frequency
200 MHz
ClassC
RF plate voltage
200 V
ClassC
RF screen voltage
200 V
ClassC
RF control-grid voltage
-30 V
ClassC
RF plate current per section
50 mA
ClassC
RF output power
13 W
ClassC
RF operating frequency
600 MHz
ClassC
RF plate voltage
600 V
ClassC
RF screen voltage
250 V
ClassC
RF control-grid voltage
-60 V
ClassC
RF plate current per section
50 mA
ClassC
RF output power
48 W
ClassC
RF operating frequency
470 MHz
ClassC,FrequencyTripler
RF plate voltage
300 V
ClassC,FrequencyTripler
RF screen voltage
250 V
ClassC,FrequencyTripler
RF control-grid voltage
-175 V
ClassC,FrequencyTripler
RF plate current per section
45 mA
ClassC,FrequencyTripler
RF output power
8 W
ClassC,FrequencyTripler
RF operating frequency
0 MHz
ClassB
RF plate voltage
500 V
ClassB
RF screen voltage
250 V
ClassB
RF control-grid voltage
-26 V
ClassB
RF plate current per section
36.5 mA
ClassB
RF output power
23.5 W
ClassB
Base-pin temperature maximum
180 C
Bulb/anode-seal temperature maximum
250 C

Capacitance

Plate-grid capacitance per section
0.04 pF
Push-pull input capacitance
4 pF
PushPull
Push-pull output capacitance
1.3 pF
PushPull
Grid-to-all capacitance per section
6.25 pF
Plate-to-all capacitance per section
2.2 pF

Characteristics

Transconductance
2.5 mA/V
Grid1-to-grid2 amplification factor
8

Application

Application
RF power amplifier / oscillator / frequency multiplier