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Power - Beam (NOT sweep) ·BeamPower

QE08200H

26.5-volt heater variant of the QE08200 high-power transmitting beam tetrode, with all other data explicitly referred to the parent type.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
26.5 V / 700 mA

Description

26.5 V heater variant of QE08200; the sheet explicitly refers all other data and curves to QE08200.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
26.5 V
Nominal heater current
700 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Beam Power

X-ray radiationInterelectrode capacitances
Transconductance
0.009 S
Amplification factor
5.7
Max plate voltage
825 V
Max screen voltage
300 V
Max plate dissipation
100 W
Max screen dissipation
10 W
Max cathode current
400 mA

26.5 V heater variant of QE08200; the sheet explicitly refers all other data and curves to QE08200.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V4

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Characteristic

  • Heizung : indirekt If

    3.9 A

    | Heizung : indirekt If = 3.9A

Capacitance

  • Capacitances Ca

    12.7 pF

    Capacitances | Capacitances Ca = 12.7 pF

  • Kapazitaten Cgi

    30 pF

    Capacitances | Kapazitaten Cgi = 30 pF

  • Cagi <

    0.9 pF

    Capacitances | Cagi < 0.9 pF

Other

  • Caracteristiques types Vg p

    250 V

    Typical characteristics | Caracteristiques types Vg p = 250V

  • Plate current

    100 mA

    Typical characteristics | Ia = 100 mA

  • Transconductance

    9 mA/V

    Typical characteristics | S = 9 mA/V

  • Temperature du scellement de l'anode max

    220 °C

    Cooling | Temperature du scellement de l'anode max. 220 °C

  • Temperature des broches max

    180 °C

    Cooling | Temperature des broches max. 180 °C

  • Temperature de l'ampoule max

    300 °C

    Cooling | Temperature de l'ampoule max. 300 °C

  • Plate voltage

    825 V

    Maximum ratings | Va = max. 825 V

  • +ia = max

    300 W

    Maximum ratings | +ia = max. 300 W

  • Na = max

    100 W

    Maximum ratings | Na = max. 100 W

  • Plate current

    400 mA

    Maximum ratings | Ia = max. 400 mA

  • Screen-grid voltage

    300 V

    Maximum ratings | Vg2 = max. 300 V

  • Ng

    12 W

    Maximum ratings | Ng2 = max. 12 W

  • Vg = max

    150 V

    Maximum ratings | -Vg = max. 150 V

  • Igi = max

    30 mA

    Maximum ratings | Igi = max. 30 mA

  • Vkf = max

    125 V

    Maximum ratings | Vkf = max. 125 V

  • Plate voltage

    750 V

    Maximum ratings | Va = 750 V

  • Vg

    250 V

    Maximum ratings | Vg2 250 V

  • Plate current

    385 mA

    Maximum ratings | Ia = 385 mA

  • I

    20 mA

    Maximum ratings | I82 = 20 mA

  • Igo

    7 mA

    Maximum ratings | Igo = 7 mA

  • Vgip

    120 V

    Maximum ratings | Vgip = 120 V

  • Wia

    285 W

    Maximum ratings | Wia = 285 W

  • Wigs

    1 W

    Maximum ratings | Wigs 1.0 W

  • W

    5 W

    Maximum ratings | W82 = 5 W

  • Wa

    85 W

    Maximum ratings | Wa = 85 W

  • Power output

    200 W

    Maximum ratings | Wo = 200 W

  • Vgz = max

    300 V

    Maximum ratings | Vgz = max. 300 V

  • f

    30 MHz

    Maximum ratings | f = 30 Mc/s - Wg2 = max. 10 W

  • f

    10 W

    Maximum ratings | f = 30 Mc/s - Wg2 = max. 10 W

  • Control-grid voltage

    650 V

    Maximum ratings | Va = max. 650 V -Vg1 = max. 150 V

  • Control-grid voltage

    150 V

    Maximum ratings | Va = max. 650 V -Vg1 = max. 150 V

  • Wia = max

    200 W

    Maximum ratings | Wia = max. 200 W Igi = max. 30 mA

  • Wia = max

    30 mA

    Maximum ratings | Wia = max. 200 W Igi = max. 30 mA

  • Wa = max

    67 V

    Maximum ratings | Wa = max. 67 V1 Rg1 = max. 25 kO

  • Plate current

    350 mA

    Maximum ratings | Ia = max. 350 mA Vkf = max. 125 V

  • Plate current

    125 V

    Maximum ratings | Ia = max. 350 mA Vkf = max. 125 V

  • f

    30 MHz

    Maximum ratings | f = 30 Mc/s

  • Plate voltage

    600 v

    Maximum ratings | Va = 600v

  • Screen-grid voltage

    250 V

    Maximum ratings | Vg2 = 250V

  • Control-grid voltage

    -100 V

    Maximum ratings | Vg1 _ -100 V

  • Plate current

    300 mA

    Maximum ratings | Ia = 300 mA

  • Screen-grid current

    20 mA

    Maximum ratings | Ig2 = 20 mA

  • Igo

    4 mA

    Maximum ratings | Igo = 4 mA

  • Vg ~ p

    110 V

    Maximum ratings | Vg ~ p = 110 V

  • is

    180 W

    Maximum ratings | is = 180 W

  • Wig?

    4 W

    Maximum ratings | Wig? = 0 .4 W

  • Wgz

    5 W

    Maximum ratings | Wgz = 5 W

  • Wa

    50 V

    Maximum ratings | Wa = 50V1

  • Power output

    0 W

    Maximum ratings | Wo = 13 0 W

  • vg

    220 V

    Maximum ratings | vg2p 220 V ')

  • Grenzdaten Ia = max

    400 mA

    Maximum ratings | Grenzdaten Ia = max. 400 mA

  • f

    350 V

    Maximum ratings | f = 30 Pc/s Vg2 = max. 350 V

  • Plate voltage

    825 V

    Maximum ratings | Va = max. 825 V Wg2 = max. 12 W

  • Plate voltage

    12 W

    Maximum ratings | Va = max. 825 V Wg2 = max. 12 W

  • Wa = max

    2 V

    Maximum ratings | Wa = max. 100 2 Vkf = max. 125 V

  • Wa = max

    125 V

    Maximum ratings | Wa = max. 100 2 Vkf = max. 125 V

  • Die HF-Spannung

    1 s

    Maximum ratings | Die HF-Spannung 1st mittels zweier sinusformigen NP-

  • Screen-grid voltage

    310 V

    Maximum ratings | Vg2 = 310 V

  • za

    270 mA

    Maximum ratings | za = 130 270 mA

  • Igz = <

    26 mA

    Maximum ratings | Igz = <5 26 mA

  • Igi

    0 mA

    Maximum ratings | Igi = 0 0 mA

  • Wia

    200 W

    Maximum ratings | Wia = 98 200 W

  • WO

    220 W

    Maximum ratings | WO = 220 W 3)

  • Published electrical value

    130 mA

    Maximum ratings | 1 ) To be adjusted so that Ia = 130 mA at Vgip = 0

  • A regler jusqu'a ce que Ia

    130 mA

    Maximum ratings | A regler jusqu'a ce que Ia = 130 mA a Vgip = 0

  • Einzustellen bis Ia

    130 mA

    Maximum ratings | Einzustellen bis Ia = 130 mA wenn Vgip = 0

  • Wa = max

    100 a

    Maximum ratings | Wa = max. 100 a

  • la = max

    400 mA

    Maximum ratings | la = max. 400 mA

  • Vgp = max

    300 V

    Maximum ratings | Vgp = max. 300 V

  • Vgt = max

    150 V

    Maximum ratings | -Vgt = max. 150 V

  • Igt = max

    30 mA

    Maximum ratings | Igt = max. 30 mA

  • Vgf = max

    125 V

    Maximum ratings | Vgf = max. 125 V

  • Plate voltage

    600 V

    Maximum ratings | Va = 750 600 V

  • Vgz

    250 V

    Maximum ratings | Vgz = 250 250 V

  • Vgf

    -45 V

    Maximum ratings | Vgf = -45 -45 V

  • Vgtgtp

    105 V

    Maximum ratings | Vgtgtp 110 ~0 X 105 V

  • Ia

    235 mA

    Maximum ratings | Ia 2x45 2x280 2x25 2x235 mA

  • Published electrical value

    24 mA

    Maximum ratings | 152 0 2x40 2x0.5 2x24 mA

  • Control-grid current

    0.5 mA

    Maximum ratings | Ig1 = 0 2x1 0 2x0.5 mA

  • Wia

    140 W

    Maximum ratings | Wia = 2x34 2x210 2x15 2x140 W

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Characteristics

  • Heater/filament voltage

    26.5 V

  • Heater/filament current

    850 mA

  • Transconductance

    9000 uS

  • Screen-grid amplification factor

    5.7

Other

  • Maximum plate/anode voltage

    825 V

  • Maximum screen-grid voltage

    350 V

  • Maximum plate/anode dissipation

    100 W

  • Maximum screen-grid dissipation

    12 W

  • Operating plate voltage

    750 V

    ClassC;Telegraphy;30MHz

  • RF output power

    200 W

    ClassC;Telegraphy;30MHz

  • Operating plate voltage

    600 V

    ClassC;PlateScreenModulation;30MHz

  • RF output power

    130 W

    ClassC;PlateScreenModulation;30MHz

  • Electrical data reference

    QE08200

    FamilySheet

Capacitance

  • Plate/anode capacitance

    12.7 pF

  • Control-grid capacitance

    30 pF

  • Plate-grid capacitance

    0.5 pF