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Power - Beam (NOT sweep) ·BeamPower

QC0535

Quick-heating beam-power tetrode designed for RF amplification, oscillation, and frequency multiplication, suitable for rapid-start transmitting service.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
OCTAL 8P
Socket code
IO
Base pins
8
Nominal heater
1.6 V / 3.2 A

Description

Quick-heating beam-power tetrode for RF amplifier, oscillator, and frequency-multiplier service.

Socket description

International Octal

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
OCTAL 8P
Socket code
IO
Base pins
8
Nominal heater voltage
1.6 V
Nominal heater current
3.2 A
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

OCTAL 8P - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Beam Power

X-ray radiationInterelectrode capacitances
Transconductance
0.007 S
Amplification factor
4.5
Max plate voltage
650 V
Max screen voltage
250 V
Max plate dissipation
25 W
Max screen dissipation
5 W
Max cathode current
160 mA

Promoted where the locked schema directly matches published RF values; frequency/service-specific limits and operating conditions are retained as parameter rows.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V4

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Other

  • Maximum plate voltage

    650 V

    RFPowerTube

  • Maximum screen voltage

    250 V

    RFPowerTube

  • Application

    Quick-heating beam-power tetrode for RF amplifier, oscillator, and frequency-multiplier service.

    SourceDescription

  • Service category

    RF/AF power service as specified in source

    RFPowerTube

  • Heater/filament voltage

    1.6 V

    RFPowerTube

  • Heater/filament current

    3.2 A

    RFPowerTube

  • Operating frequency

    60 MHz

    RFPowerAmplifier;IntermittentMobile

  • Plate voltage

    600 V

    RFPowerAmplifier;IntermittentMobile

  • Screen voltage

    180 V

    RFPowerAmplifier;IntermittentMobile

  • Control-grid voltage

    -71 V

    RFPowerAmplifier;IntermittentMobile

  • Plate current

    150 mA

    RFPowerAmplifier;IntermittentMobile

  • Power output

    65 W

    RFPowerAmplifier;IntermittentMobile

  • Operating frequency

    175 MHz

    RFPowerAmplifier;IntermittentMobile

  • Plate voltage

    400 V

    RFPowerAmplifier;IntermittentMobile;175MHz

  • Power output

    35 W

    RFPowerAmplifier;IntermittentMobile;175MHz

Construction

  • Heating method

    Direct

    RFPowerTube

  • Device class

    BeamPower

    RFPowerTube

Characteristic

  • Transconductance

    7000 µS

    RFPowerTube

  • Screen-to-control-grid amplification factor

    4.5

    RFPowerTube

  • Cathode heating time to >70% output

    0.4 s

    QuickHeating

Capacitance

  • Plate capacitance

    8.5 pF

    RFPowerTube

  • Control-grid capacitance

    13.5 pF

    RFPowerTube

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Characteristics

  • Heater/filament voltage

    1.6 V

  • Heater/filament current

    3.2 A

  • Transconductance

    7000 uS

  • Screen-grid amplification factor

    4.5

  • Cathode heating time to >70% output

    0.4 sec

Other

  • Maximum plate/anode voltage

    650 V

  • Maximum screen-grid voltage

    250 V

  • Maximum plate/anode dissipation

    25 W

  • Maximum screen-grid dissipation

    5 W

  • Operating plate voltage

    600 V

    ClassC;Telegraphy;60MHz

  • RF output power

    65 W

    ClassC;Telegraphy;60MHz

  • Operating plate voltage

    400 V

    ClassC;Telegraphy;175MHz

  • RF output power

    35 W

    ClassC;Telegraphy;175MHz

  • Maximum anode input power

    90 W

    60MHz

Capacitance

  • Plate/anode capacitance

    8.5 pF

  • Control-grid capacitance

    15.5 pF

  • Plate-grid capacitance

    0.24 pF