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Power - Tetrode (NOT beam) ·Tetrode

QC0515

Directly heated screen-grid transmitting tetrode designed for short-wave RF amplification. Philips documentation provides filament data, capacitances, limiting ratings, and representative RF operating conditions.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
4 V / 1.1 A

Description

Directly heated screen-grid transmitting tetrode for short-wave RF amplification. The supplied Philips source was read for heater or filament data, capacitances, limiting ratings, and representative RF/television operating conditions, with variant-sheet cross-references preserved.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
4 V
Nominal heater current
1.1 A
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances
Transconductance
0.0015 S
Amplification factor
3
Max plate voltage
500 V
Max screen voltage
125 V
Max plate dissipation
15 W
Max screen dissipation
6 W
Max cathode current
75 mA

Published transmitting-tube ratings and principal characteristics promoted; additional RF operating points retained as parameters.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Characteristics

  • Heater/filament voltage

    4 V

  • Heater/filament current

    1.1 A

  • Transconductance

    1500 uS

  • Screen-grid amplification factor

    3

  • Maximum transconductance

    2500 uS

Other

  • Maximum plate/anode voltage

    500 V

  • Maximum screen-grid voltage

    125 V

  • Maximum plate/anode dissipation

    15 W

  • Maximum screen-grid dissipation

    6 W

  • Operating plate voltage

    500 V

    ClassC;Telegraphy;15m

  • RF output power

    15 W

    ClassC;Telegraphy;15m

  • Operating plate voltage

    500 V

    ClassC;PlateModulation;15m

  • RF output power

    8.5 W

    ClassC;PlateModulation;15m

  • Maximum screen-grid dissipation

    6 W

Capacitance

  • Plate/anode capacitance

    14.5 pF

  • Control-grid capacitance

    13.7 pF

  • Plate-grid capacitance

    0.004 pF