Alternatives & variations Download PDF datasheet

PE1100

Power pentode designed for RF transmitting, linear RF amplification, oscillation, modulation, or RF/LF power-amplifier service.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 12.6 V / 1.35 A

Description

Indirectly heated power pentode for RF and LF amplifier service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 12.6 V
Nominal heater current: 1.35 A
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Transconductance: 0.006 S
Max plate voltage: 1000 V
Max screen voltage: 300 V

Promoted where the locked schema directly matches published RF values; frequency/service-specific limits and operating conditions are retained as parameter rows.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Maximum plate voltage
1000 V
RFPowerTube
Maximum screen voltage
300 V
RFPowerTube
Application
Indirectly heated power pentode for RF and LF amplifier service.
SourceDescription
Service category
RF/AF power service as specified in source
RFPowerTube
Heater/filament voltage
12.6 V
RFPowerTube
Heater/filament current
1.35 A
RFPowerTube
Plate voltage
1000 V
RFPowerAmplifier
Plate current
177 mA
RFPowerAmplifier

Construction

Heating method
Indirect
RFPowerTube
Device class
Pentode
RFPowerTube

Characteristic

Transconductance
6000 µS
RFPowerTube
Screen-to-control-grid amplification factor
6.7
RFPowerTube

Capacitance

Plate capacitance
11 pF
RFPowerTube
Control-grid capacitance
20.5 pF
RFPowerTube

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Transconductance
6000 µS
Ia=40mA
Anode capacitance
11 pF
Grid capacitance
20.5 pF
Anode-grid capacitance
0.1 pF