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Power - Pentode (NOT beam) ·Pentode

PE0525

Power pentode designed for RF transmitting, linear RF amplification, oscillation, modulation, or RF/LF power-amplifier service.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
12.6 V / 700 mA

Description

Indirectly heated pentode for RF/LF amplification and oscillator service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
12.6 V
Nominal heater current
700 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Transconductance
0.0033 S
Amplification factor
7.6
Max plate voltage
500 V
Max screen voltage
300 V
Max plate dissipation
12 W
Max screen dissipation
5 W
Max cathode current
130 mA

Promoted where the locked schema directly matches published RF values; frequency/service-specific limits and operating conditions are retained as parameter rows.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Maximum plate voltage

    500 V

    RFPowerTube

  • Maximum screen voltage

    300 V

    RFPowerTube

  • Application

    Indirectly heated pentode for RF/LF amplification and oscillator service.

    SourceDescription

  • Service category

    RF/AF power service as specified in source

    RFPowerTube

  • Heater/filament voltage

    12.6 V

    RFPowerTube

  • Heater/filament current

    700 mA

    RFPowerTube

  • Plate voltage

    500 V

    RFPowerAmplifier

  • Plate current

    90 mA

    RFPowerAmplifier

Construction

  • Heating method

    Indirect

    RFPowerTube

  • Device class

    Pentode

    RFPowerTube

Characteristic

  • Transconductance

    3300 µS

    RFPowerTube

Capacitance

  • Plate capacitance

    7.8 pF

    RFPowerTube

  • Control-grid capacitance

    14.5 pF

    RFPowerTube

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Capacitances Ca

    7.8 pF

  • Kapazitéten Cagl

    0.15 pF

  • Kenndaten 5 (Ta=30 mi)

    3.3 mA/V

Other

  • Va = max

    500 V

  • Wa = max, [1]

    12 W

  • Wa = max, [2]

    100 kΩ

  • Vg2 = max, [1]

    300 V

  • Vg2 = max, [2]

    130 mA

  • Wg2 = max, [1]

    5 W

  • Wg2 = max, [2]

    800 mA

  • Wgl = mex [1]

    0.5 W

  • Wgl = mex [2]

    75 V

  • Va = 500

    400 V

    ClassB

  • Vg2 = 250

    250 V

  • Vg3 = 0

    0 V

  • Ia = 36

    42.5 mA

  • Va = 4C0

    300 V

    ClassC

  • Vg1 = =80

    80 V

    ClassC

  • Vge = 200

    200 V

    ClassC

  • Ig = 70

    71 nA

    ClassC

  • Va = 400 400

    400 V

    ClassC

  • Vg1 = -175 =200

    250 V

    ClassC

  • Vg2 = 250 250

    250 V

    ClassC

  • Ia = 47 50

    52.5 mA

    ClassC

  • Vg1 = 24

    -18.5 V

    ClassB;TwoTubes

  • Vg2 = 250

    200 V

    ClassB;TwoTubes

  • Vg1gip = "o 70 0 g

    2 V

    ClassB;TwoTubes

Characteristic

  • Ig2 = 3

    3.5 mA

  • Vgip = 17,5

    21.25 V

  • Wgo = 0,75

    0.9 W

  • Wa = 18

    17 W

  • Wa = 12

    11.6 W

  • Wo = 6 5+

    4 W

  • Ig'l = 2

    3.4 mA

  • Vigl = 0,07

    0.13 W

  • Ig1 = 2,5

    3.5 mA

  • Igo

    4.5 mA

  • Vgip = 100

    105 V

  • Wigi = 0,25

    0.35 W

  • Wig = 28

    23 W

  • Vg = 8

    17 W

  • W = 20

    16 W

  • Vg2p = 190

    190 V

  • W¥mod = 15

    13 W

  • Igt = 0,9 1

    152 mA

  • Igz = 2 2,5

    3 mA

  • Vgip = 200 220

    270 V

  • Wigl = 0,16 0.2

    0.3 W

  • Vg2 = 0,5 0,65 C,

    75 W

  • Wig = 18,8 20

    21 W

  • Wa = 12 12

    1 W

  • Wa = 6,8 8

    9 W

  • Ila = 2x18 2x71 2x1% 2x

    89 mA

    TwoTubes

  • Ig1 = o} 2x1,8 0 2x

    4.4 mA

  • Iz2z = 2x0,6 2x11,2 2x0,5 2x

    10.5 mA

  • Wigi = 0 2x57 0 2x

    165 mW

  • Wg2 2x0,18% 2x2,8 2x0,1 2x

    2.1 W

  • Wia = 2x9 2x35,5 2x6 2x

    35.5 W

  • Wo = 0 19 0

    49 W

  • Vg1

    -18 V

  • Vg2

    200 V

  • Vg3

    0 V

  • Vgiglp = 0

    100 V

  • Ia = 2x15 2x

    108 mA

  • Ig1 [¢] 2x

    6 mA

  • Ig2 = 2x0,5 2x

    13 mA

  • wig‘l = [¢] 2x

    270 mW

  • Vg2 = 2x0,1 2x

    2.6 W

  • Wia = 2x4,5 2x

    32.5 W

  • Wa = 2x4,5 2x

    12.5 W

  • Yo = 0

    40 W

  • (A Vgs

    0 V

  • Iyt Vg2

    200 V

  • MmAF [1]

    1 A

  • MmAF [2]

    0 V

  • 20 B

    0 mA

  • EEEmaEs Vpa

    250 V

  • Vez

    0 V

  • O3AfRAr Ao B

    0 mA

  • §nh) Vyo

    250 V

  • Vgz

    0 V

  • 20 lh2

    250 V

  • Vgr=—

    28 V

  • 200y =—

    28 V

  • V3

    0 V

  • 40y,

    500 V

  • BE ‘(7’ =—

    24 V