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Power - Pentode (NOT beam) ·Pentode

PE0410

Power pentode designed for RF transmitting, linear RF amplification, oscillation, modulation, or RF/LF power-amplifier service.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
12 V / 650 mA

Description

Power pentode intended for RF amplification, oscillator and/or modulation service, with published transmitting operating conditions and limiting ratings.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
12 V
Nominal heater current
650 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Transconductance
0.0075 S
Amplification factor
25
Max plate voltage
500 V
Max screen voltage
300 V
Max plate dissipation
10 W
Max screen dissipation
3 W

Pentode section of PE0410.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • verbrauches sehr hoch ist und die eine groBe Steuergitterstrom (Trennstufe)

    250 V

    ClassC

  • mechanische Festigkeit aufweist. Steuergitterstrom 250 'V

    15 W

    ClassC

  • H.F.-Klasse B (Telephonie)

    300 V

    ClassB;ClassC

  • Die PE 04/10 kann als H.F.-Verstirker- Anode)

    200 V

    ClassB;ClassC

  • witter)

    250 V

    ClassB;ClassC

  • Anode und dem Schirmgitter)

    210 V

    ClassB;ClassC

  • phie) [1]

    450 V

    ClassC

  • phie) [2]

    20 W

    ClassC

  • und dem Schirmgitter gemeinsam erfolgen. Bei H.F.-KlasseB (Telephonie) | [1]

    450 V

    ClassC

  • und dem Schirmgitter gemeinsam erfolgen. Bei H.F.-KlasseB (Telephonie) | [2]

    250 V

    ClassC

  • und dem Schirmgitter gemeinsam erfolgen. Bei H.F.-KlasseB (Telephonie) | [3]

    4 W

    ClassC

  • im Fanggitter) [1]

    450 V

    ClassC

  • im Fanggitter) [2]

    135 V

    ClassC

  • Schirmgitter) [1]

    400 V

    ClassC

  • Schirmgitter) [2]

    150 V

    ClassC

  • Anodenspannung von

    500 V

  • Heizspannung

    12 V

  • Heizstrom = ca

    650 mA

  • Séttigungsstrom ca

    800 mA

  • Anodenspannung max

    500 V

  • S — Schirmgittersioannung . max

    300 V

  • Héchstzulidssiger Anodenverlust - max

    10 W

  • Gepriifter Anodenverlust

    15 W

  • Héchstzuliassiger Schirmgitterverlust = max

    3 W

  • Steilheit bei Vg [1]

    500 V

  • Steilheit bei Vg [2]

    300 V

  • I, [1]

    50 mA

  • I, [2]

    7.5 mA/V

  • Héchstzuldssiger Kathodenstrom . max

    85 mA

  • max

    75 V