PB3800

Philips RF power pentode designed for high-frequency amplifier and oscillator service. It combines transmitter output capability with radio-frequency generation in professional equipment.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 12 V / 8.5 A

Description

RF power pentode for high-frequency amplifier and oscillator service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 12 V
Nominal heater current: 8.5 A
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Transconductance: 0.0065 S
Amplification factor: 3.5
Max plate voltage: 3000 V
Max screen voltage: 600 V
Max plate dissipation: 450 W
Max screen dissipation: 100 W
Max cathode current: 700 mA

Promoted where the locked schema directly matches published RF values; frequency/service-specific limits and operating conditions are retained as parameter rows.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Maximum plate voltage
3000 V
RFPowerTube
Maximum screen voltage
600 V
RFPowerTube
Application
RF power pentode for high-frequency amplifier and oscillator service.
SourceDescription
Service category
RF/AF power service as specified in source
RFPowerTube
Heater/filament voltage
12 V
RFPowerTube
Heater/filament current
8.5 A
RFPowerTube
Operating frequency
60 MHz
RFPowerAmplifier
Plate voltage
3000 V
RFPowerAmplifier
Plate current
550 mA
RFPowerAmplifier
Screen voltage
300 V
RFPowerAmplifier
Maximum frequency
200 MHz
RFPowerAmplifier

Construction

Heating method
Direct
RFPowerTube
Device class
Pentode
RFPowerTube

Characteristic

Transconductance
6500 µS
RFPowerTube
Screen-to-control-grid amplification factor
3.5
RFPowerTube

Capacitance

Plate capacitance
21 pF
RFPowerTube
Control-grid capacitance
29 pF
RFPowerTube

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Maximum plate voltage
3000 V
Maximum screen voltage
750 V
Maximum plate dissipation
450 W
Maximum screen dissipation
100 W
Maximum cathode current
700 mA
Maximum peak cathode current
4.5 A
Operating plate voltage
3000 V
ClassC;Telegraphy
Operating screen voltage
600 V
ClassC;Telegraphy
Operating plate current
700 mA
ClassC;Telegraphy
RF output power
1200 W
ClassC;Telegraphy
Efficiency
57 %
ClassC;Telegraphy

Characteristics

Transconductance
6500 uS
Screen-grid amplification factor
3.5

Capacitance

Plate-cathode capacitance
21 pF
Grid-cathode capacitance
29 pF
Plate-grid capacitance
0.05 pF