PB2500

Directly heated thoriated-tungsten RF power pentode for HF amplification, telegraphy, telephony, and modulation. Its construction supports substantial professional radio-frequency power service.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 12 V / 7.3 A

Description

PB2500 is a Pentode device in the supplied Philips industrial literature. Directly heated thoriated-tungsten RF power pentode for HF amplifier, telegraphy, telephony, and modulation service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 12 V
Nominal heater current: 7.3 A
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Transconductance: 0.006 S
Amplification factor: 6.2
Max plate voltage: 2500 V
Max screen voltage: 500 V
Max plate dissipation: 250 W
Max screen dissipation: 60 W
Max grid dissipation: 20 W
Max cathode current: 600 mA

Directly heated thoriated-tungsten RF power pentode for HF amplifier, telegraphy, telephony, and modulation service.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

Anode capacitance
20 pF
Grid-1 capacitance
23 pF
Anode-to-grid1 capacitance
0.2 pF

Characteristic

Amplification factor grid2-grid1
6.2
Transconductance at 120mA
6000 uS

Other

Plate voltage
2500 V
ClassC; Telegraphy
Grid1 voltage
-150 V
ClassC; Telegraphy
Screen voltage
400 V
ClassC; Telegraphy
Plate current
340 mA
ClassC; Telegraphy
RF output power
600 W
ClassC; Telegraphy
Plate voltage
2000 V
ClassB; Telephony
Grid1 voltage
-50 V
ClassB; Telephony
Screen voltage
350 V
ClassB; Telephony
Plate current
170 mA
ClassB; Telephony
RF output power
90 W
ClassB; Telephony
Maximum grid1 dissipation
20 W
Maximum cathode current
600 mA
Maximum peak cathode current
2400 mA
Maximum pin-seal temperature
200 degC

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Maximum plate voltage
2500 V
Maximum screen voltage
500 V
Maximum plate dissipation
250 W
Maximum screen dissipation
60 W
Maximum cathode current
600 mA
Maximum peak cathode current
2.4 A
Operating plate voltage
2500 V
ClassC;Telegraphy
Operating screen voltage
400 V
ClassC;Telegraphy
Operating plate current
340 mA
ClassC;Telegraphy
RF output power
600 W
ClassC;Telegraphy
Efficiency
71 %
ClassC;Telegraphy

Characteristics

Transconductance
6000 uS
Screen-grid amplification factor
6.2

Capacitance

Plate-cathode capacitance
20 pF
Grid-cathode capacitance
23 pF
Plate-grid capacitance
0.2 pF