PB2200

Directly heated thoriated-tungsten RF power pentode for HF amplification, telegraphy, telephony, and modulation. Philips industrial documentation identifies it as a versatile professional transmitting tube.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 12 V / 3.35 A

Description

PB2200 is a Pentode device in the supplied Philips industrial literature. Directly heated thoriated-tungsten RF power pentode for HF amplifier, telegraphy, telephony, and modulation service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 12 V
Nominal heater current: 3.35 A
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Transconductance: 0.0033 S
Amplification factor: 5.9
Max plate voltage: 2000 V
Max screen voltage: 400 V
Max plate dissipation: 110 W
Max screen dissipation: 25 W
Max grid dissipation: 12 W
Max cathode current: 285 mA

Directly heated thoriated-tungsten RF power pentode for HF amplifier, telegraphy, telephony, and modulation service.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

Anode capacitance
14 pF
Grid-1 capacitance
13.7 pF
Anode-to-grid1 capacitance
0.15 pF

Characteristic

Amplification factor grid2-grid1
5.9
Transconductance at 55mA
3300 uS

Other

Plate voltage
2000 V
ClassC; Telegraphy
Grid1 voltage
-150 V
ClassC; Telegraphy
Screen voltage
300 V
ClassC; Telegraphy
Plate current
190 mA
ClassC; Telegraphy
RF output power
270 W
ClassC; Telegraphy
Plate voltage
2000 V
ClassB; Telephony
Grid1 voltage
-65 V
ClassB; Telephony
Screen voltage
400 V
ClassB; Telephony
Plate current
77.5 mA
ClassB; Telephony
RF output power
45 W
ClassB; Telephony
Maximum grid1 dissipation
12 W
Maximum cathode current
285 mA
Maximum peak cathode current
1400 mA

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Maximum plate voltage
2000 V
Maximum screen voltage
400 V
Maximum plate dissipation
110 W
Maximum screen dissipation
25 W
Maximum cathode current
285 mA
Maximum peak cathode current
1.4 A
Operating plate voltage
2000 V
ClassC;Telegraphy
Operating screen voltage
300 V
ClassC;Telegraphy
Operating plate current
190 mA
ClassC;Telegraphy
RF output power
270 W
ClassC;Telegraphy
Efficiency
71 %
ClassC;Telegraphy

Characteristics

Transconductance
3300 uS
Screen-grid amplification factor
5.9

Capacitance

Plate-cathode capacitance
14 pF
Grid-cathode capacitance
13.7 pF
Plate-grid capacitance
0.15 pF