M8161

Special-quality rugged variable-mu RF pentode for gain-controlled equipment exposed to vibration and shock.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: -
Base pins: -
Nominal heater: 6.3 V / 200 mA

Description

SPECIAL QUALITY VARIABLE-MU R.F. PENTODE M I I Special quality variable-mu r.f. pentode for use in equip- ment where mechanical vibration and shocks are unavoid- able and where statistically controlled major electrical characteristics are required. This data should be read in conjunction with GENERAL NOTES— The supplied datasheet publishes electrical ratings and characteristics for this pentode device.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 6.3 V
Nominal heater current: 200 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 900000 Ω
Transconductance: 0.00245 S
Amplification factor: 30
Max plate voltage: 300 V
Max screen voltage: 300 V
Max plate dissipation: 3 W
Max screen dissipation: 0.7 W

Promoted values taken from published characteristics and absolute/limiting ratings.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Heater or filament voltage
6.3 V
Heater or filament current
200 mA
MaxPlateVoltage
300
Promoted field source value
MaxScreenVoltage
300
Promoted field source value
MaxPlateDissipation
3
Promoted field source value
MaxScreenDissipation
0.7
Promoted field source value

Characteristic

Plate Resistance
900000
Promoted field source value
Transconductance
0.00245
Promoted field source value
Amplification Factor
30
Promoted field source value