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EH90

Dual-control heptode for television pulse, gated-amplifier, and frequency-conversion circuits, with separate grids allowing effective signal gating and mixing.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: B7G
Base pins: 7
Nominal heater: 6.3 V / 300 mA

Description

Dual-control heptode for television-receiver applications.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: B7G
Base pins: 7
Nominal heater voltage: 6.3 V
Nominal heater current: 300 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Heptode

X-ray radiationInterelectrode capacitances

Plate resistance: 1000000 Ω
Transconductance: 0.0011 S
Max plate voltage: 300 V
Max screen voltage: 300 V
Max plate dissipation: 1 W
Max screen dissipation: 1 W
Max cathode current: 14 mA

Promoted ratings and characteristics are taken from the printed target-tube entry in the approved PDF.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Heptode

Characteristic

Heater voltage
6.3 V
Published heater rating
Heater current
200 mA
Published heater rating
Transconductance
1200 µS
DualControl
Plate resistance
900000 ohm
DualControl

Other

Plate voltage
100 V
DualControl
Screen voltage
30 V
DualControl
Plate current
0.75 mA
DualControl
Screen current
1.1 mA
DualControl
Maximum plate voltage
300 V
Published limit
Maximum plate dissipation
1 W
Published limit
Maximum screen voltage
100 V
Published limit

Data set 02

1967 Mullard Receiving Tubes for Maintenance

Published operating points and test conditions from this source.

SECTION 1

Heptode

Characteristic

Plate voltage
100 V
Screen-grid voltage
30 V
Control-grid 1 voltage
0 V
Control-grid 3 voltage
-1 V
Plate current
0.8 mA
Screen-grid current
4 mA
Transconductance grid3-to-anode
1.55 mA/V
Plate resistance
400 kOhm

Other

Maximum plate voltage
300 V
Maximum plate dissipation
1 W
Maximum screen-grid voltage
100 V
Maximum screen-grid dissipation
1 W
Maximum cathode current
14 mA

Capacitance

Input capacitance grid1
5.5 pF
Input capacitance grid3
7 pF
Output capacitance
7.5 pF

Data set 03

1973 Mazda Valves Binder 2

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

Heater Voltage Vh
63 V
Heater Current Ih
3 A
Maximum Anode Dissipation pa(max)
10 W
Maximum Screen Grids Dissipation pg2-_g4(max)
10 W
Maximum Anode Voltage Va(max)
300 V
Maximum Anode Supply Voltage Va(b)max
550 V
Maximum Screen Grids Voltage Vg2 .,..g4(max)
100 V
Maximum Screen Grids Supply Voltage Vg2+ g4(b)max
300 V
Maximum Cathode Current Ik(max)
14 mA

Characteristic

For V52 54
30 V
Cathode Positive
200 V
Cathode Negative
100 V
Anode to Grid 1 ca g1 <
7 pF
Anode to Grid 3 ca_g3 <
36 pF
Grid 1 Input Cin(g1)
5.5 pF
Output cot
75 pF
Grid 1 to Grid 3 cg1_g3 <
22 pF
Anode Voltage Va 10 100
100 V
Screen Grids Voltage Vg2_ g4 30 30
30 V
Control Grid Voltage Vg1 0 0 -1
0 V
Grid 3 Voltage Vg3 0 -1 0
0 V
Anode Current la 20 08
75 mA
Screen Grids Current Ig2 +g4 35 40 1'
1 mA
Anode) gm(g1-a) — — 1
2 mA
Control Grid Voltage (la=50µA) Vg1 — —
25 V
Vga+gs =
30 V
192+
9 a
V93 =
-2.5 V
Vga +9,
730 V
r.uov -O
5 V

Data set 04

1981 Russian Tubes Katsnelson and Larionov

Published operating points and test conditions from this source.

SECTION 1

Heptode

Characteristic

Heater voltage
6.3 V
Published nominal/basic-parameter heater condition.
Heater current
300 mA
Published heater current.
Plate current
0.8 mA
Published basic-parameter operating point.
Screen current
4 mA
Published basic-parameter operating point.
Transconductance
1100 µS
Published basic-parameter value; normalized to µS.
Plate resistance
1000000 Ω
Published internal/plate resistance.
Control-grid-1 transconductance
1100 µS
Published in the filename-designated tube entry.
Control-grid-3 transconductance
1250 µS
Published in the filename-designated tube entry.

Other

Maximum plate voltage
300 V
Published limiting operating value.
Maximum screen voltage
300 V
Published limiting operating value.
Maximum cathode current
14 mA
Published limiting cathode-current value.
Maximum plate dissipation
1 W
Published limiting plate-dissipation value.
Maximum screen dissipation
1 W
Published limiting screen-dissipation value.

Data set 05

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Heptode

Characteristic

Chauffage: indirecttpar C.A. ou C.C. Ve
6.3 V
rallele Ir
300 mA
alimentation série ou pa- Ve
6.3 V
rallele T,
300 mA
Ry = -~ 0,7
1 KO
Vg1 (12 [1]
50 pa
Vg1 (12 [2]
-2.5 v
Wgoiga = max
1 W
Ik = max
14 mA
Rgy (Vgouga &
30 V
Vi (k pos.; f neg.) = max
200 V

Capacitance

Cag1
< 0.07 pF
Cagy ‘¢
0.36 pF
Cg3— (k+f+gl+g2+84485)
7 pF
Ca- (k+f+gleg2+g3+g4+g5)
725 PF
Cg1g3 ¢
0.22 pF
Cags
< 0.36 PF
Cg1- (k+f+g2483+84+85)
5.5 pF
Cgz- (k+f+g1+g2+g4+85)
7 pF

Other

Vo = 10 100
100 V
Vgoepd = 30 30
30 V
Ve = G o
-1 v
I, = 1,2 0,8
0.75 ma
152+5* = 4,1 4,0
1.1 ma
g1 = ~
0.95 ma/v
v, = maX
550 V
Va = max
300 V
¥y = maX
1 W
V(g2+a4)o = pax
550 V
Veoses = max
100 V