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Voltage Radio Detector Converter ·Hexode

EH1

High-resistance hexode for first-detector/modulator and RF/IF amplifier service. Its multi-grid construction supports controlled mixing and signal amplification in radio receiver frequency-conversion stages.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
4.3 V / 400 mA

Description

Hexode for first-detector/modulator and RF/IF amplifier service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
4.3 V
Nominal heater current
400 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Hexode

X-ray radiationInterelectrode capacitances
Plate resistance
2000000 Ω
Transconductance
0.0018 S
Max plate voltage
250 V
Max screen voltage
125 V
Max plate dissipation
1.5 W
Max screen dissipation
0.5 W

Hexode for first-detector/modulator and RF/IF amplifier service.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Hexode

Other

  • Heater voltage

    4.3 V

    Heating

  • Heater current

    400 mA

    Heating

  • Maximum plate voltage

    250 V

    Promoted published datasheet value

  • Maximum screen voltage

    125 V

    Promoted published datasheet value

  • Maximum plate dissipation

    1.5 W

    Promoted published datasheet value

  • Maximum screen dissipation

    0.5 W

    Promoted published datasheet value

  • Vao max

    550 V

    Limiting values

  • Va max

    250 V

    Limiting values

  • Vg2o max

    400 V

    Limiting values

Characteristic

  • Plate resistance

    2000000 Ω

    Promoted published datasheet value

  • Transconductance

    1800 µS

    Promoted published datasheet value

  • Ia (Vgl

    -24 V

    Published datasheet value

  • Ig2 + 4 (Vgl =

    -2 V

    Published datasheet value

  • Sc (Vgl =

    -2 V

    Published datasheet value

  • Sc (Vgl =

    -24 V

    Published datasheet value

  • Ri (Vgl =

    -2 V

    Published datasheet value

  • Ri (Vgl =

    -24 V

    Published datasheet value

  • Ia (Vgl = Vg3 =

    -2 V

    Published datasheet value

  • Ia (Vgl = Vg3 =

    -24 V

    Published datasheet value

  • Ig 2 t 4 (Vgl = Vg3 =

    -2 V

    Published datasheet value

  • Sagl (Ia =

    3 mA

    Published datasheet value

  • Sagl (Vgl = Vgl =

    -24 V

    Published datasheet value

  • Ri (Ia =

    3 mA

    Published datasheet value

  • Ri (Vgl = Vgl =

    -24 V

    Published datasheet value