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Voltage Dual Pentode ·Pentode-Pentode

EFF51

Twin RF pentode designed for push-pull ultra-short-wave amplification to approximately 500 MHz, providing two matched sections for VHF service.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
-
Socket code
-
Base pins
-
Nominal heater
6.3 V / 600 mA

Description

Twin RF pentode for push-pull ultra-short-wave amplification up to 500 MHz.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
6.3 V
Nominal heater current
600 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
350000 Ω
Transconductance
0.0075 S
Max plate voltage
300 V
Max screen voltage
225 V

Twin sections electrically identical; one representative section row per compression rule.

Section 2

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
350000 Ω
Transconductance
0.0075 S
Max plate voltage
300 V
Max screen voltage
225 V

Second identical physical pentode section; added to align rows with SectionCount.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater voltage

    6.3 V

    Heating

  • Heater current

    600 mA

    Heating

  • Maximum plate voltage

    300 V

    Promoted published datasheet value

  • Maximum screen voltage

    225 V

    Promoted published datasheet value

Characteristic

  • Plate resistance

    350000 Ω

    Promoted published datasheet value

  • Transconductance

    7500 µS

    Promoted published datasheet value

  • Vg2

    225 v

    Published datasheet value

  • Ia 2x

    10 mA

    Published datasheet value