EF762

Subminiature high-slope RF pentode designed for high-frequency amplifier stages. Its compact construction and substantial transconductance support fixed-gain RF signal amplification.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: B9A
Base pins: 9
Nominal heater: 6.3 V / 150 mA

Description

Subminiature high-slope RF pentode for high-frequency amplifier stages.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: B9A
Base pins: 9
Nominal heater voltage: 6.3 V
Nominal heater current: 150 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 500000 Ω
Transconductance: 0.009 S
Max plate voltage: 175 V
Max screen voltage: 175 V
Max plate dissipation: 0.8 W
Max screen dissipation: 0.3 W
Max cathode current: 12 mA

Published ratings and characteristics promoted from the approved German source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1953 RFT Rundfunk Technik

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

HeaterVoltageNominal
6.3 V
Nominal
HeaterCurrentNominal
175 mA
Nominal
Maximum Plate Voltage
300 V
Maximum Screen Voltage
300 V
Maximum Plate Dissipation
2.5 W
Maximum Screen Dissipation
0.6 W
Maximum Cathode Current
25 mA

Characteristic

Transconductance
9000 µS
Typical
Plate Resistance
500000 ohm
Typical