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Voltage Pentode - High Frequency (single) ·Pentode

EF730

Subminiature RF pentode with short suppressor-grid base for specialized miniature high-frequency and signal-control circuitry.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
WIRE8
Base pins
8
Nominal heater
6.3 V / 150 mA

Description

The Mullard EF730 is a subminiature RF pentode with short suppressor-grid base.

Socket description

Subminiature all-glass 8-wire lead family

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
WIRE8
Base pins
8
Nominal heater voltage
6.3 V
Nominal heater current
150 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
110000 Ω
Transconductance
0.0032 S
Max plate voltage
165 V
Max screen voltage
155 V
Max plate dissipation
1.1 W
Max screen dissipation
0.7 W

Published ratings and characteristics promoted from the supplied Brimar source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1958 Mullard Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Heater Voltage

    6.3 V

  • Heater Current

    150 mA

Data set 02

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater Voltage

    6.3 V

  • Heater Current

    150 mA

  • Plate Voltage

    100 V

  • Screen Voltage

    100 V

  • Plate Current

    5.3 mA

  • Screen Current

    0 mA

  • Transconductance

    3200 uS

  • Plate Resistance

    110000 ohm

  • Grid1 Transconductance

    3200 uS

  • SuppressorGrid Transconductance

    500 uS

  • Grid1 Cutoff Voltage

    -7.5 V

    Ia=10uA

  • Grid3 Cutoff Voltage

    -8 V

    Ia=10uA

  • Plate-Grid1 Capacitance Maximum

    0.02 pF

    Shielded

  • Grid1-Grid3 Capacitance Maximum

    0.15 pF

    Shielded

  • Input Capacitance Grid1

    4 pF

    Shielded

  • Input Capacitance Grid3

    3.7 pF

    Shielded

Other

  • Maximum Plate Voltage

    165 V

  • Maximum Screen Voltage

    155 V

  • Maximum Plate Dissipation

    1.1 W

  • Maximum Screen Dissipation

    0.7 W

  • Maximum Plate Supply Voltage

    330 V

  • Maximum Screen Supply Voltage

    310 V

  • Maximum Grid3 Positive Voltage

    30 V