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Voltage Pentode - Remote Cutoff (single) ·Pentode

EF71

Mullard subminiature variable-mu RF pentode for compact gain-controlled high-frequency amplifier stages.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
WIRE8
Base pins
8
Nominal heater
6.3 V / 150 mA

Description

The Mullard EF71 is a subminiature variable-mu RF pentode for controlled RF amplification.

Socket description

Subminiature all-glass 8-wire lead family

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
WIRE8
Base pins
8
Nominal heater voltage
6.3 V
Nominal heater current
150 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
260000 Ω
Transconductance
0.0045 S
Max plate voltage
175 V
Max screen voltage
175 V
Max plate dissipation
1 W
Max screen dissipation
0.5 W

Published ratings and characteristics promoted from the supplied Brimar source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1958 Mullard Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Heater Voltage

    6.3 V

  • Heater Current

    150 mA

  • VariableMuCharacteristic

    1 boolean

Data set 02

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater Voltage

    6.3 V

  • Heater Current

    150 mA

  • Plate Voltage

    100 V

  • Screen Voltage

    100 V

  • Plate Current

    7.2 mA

  • Screen Current

    2.2 mA

  • Transconductance

    4500 uS

  • Plate Resistance

    260000 ohm

  • Input Capacitance

    4.5 pF

    Shielded

  • Output Capacitance

    3.4 pF

    Shielded

  • Plate-Grid Capacitance Maximum

    0.015 pF

    Shielded

  • Cathode Resistor

    120 ohm

  • Grid Voltage at gm=25uS

    -14 V

Other

  • Maximum Plate Voltage

    175 V

  • Maximum Screen Voltage

    175 V

  • Maximum Plate Dissipation

    1 W

  • Maximum Screen Dissipation

    0.5 W

  • Maximum Plate Supply Voltage

    300 V

  • Maximum Screen Supply Voltage

    300 V