Data set 01
1958 Mullard Receiving Tubes
Published operating points and test conditions from this source.
SECTION 1
Pentode
Characteristic
Heater Voltage
6.3 V
Heater Current
200 mA
Voltage Pentode - High Frequency (single) ·Pentode
EF70
Subminiature high-slope RF pentode with specialized suppressor-grid arrangement and internal suppressor diode for compact high-frequency circuitry.
Directly heatedCold cathodeCommon cathodeDissimilar
- Sections
- 1
- Base
- -
- Socket code
- WIRE8
- Base pins
- 8
- Nominal heater
- 6.3 V / 200 mA
Description
The Mullard EF70 is a subminiature high-slope RF pentode with short suppressor-grid base and internal suppressor diode.
Socket description
Subminiature all-glass 8-wire lead family
General specifications
Tube and section characteristics
Properties common to every published source and operating point.
Heater and base
- Base
- -
- Socket code
- WIRE8
- Base pins
- 8
- Nominal heater voltage
- 6.3 V
- Nominal heater current
- 200 mA
- Parallel heater voltage
- -
- Parallel heater current
- -
- Series capable
- No
Terminal pinout
Electrical assignments shared by every tube using this base designation.
No verified pinout is recorded for this base designation.
Section ratings
1 physical section, each with unique specifications.
Section 1
Pentode
X-ray radiationInterelectrode capacitances
- Plate resistance
- 100000 Ω
- Transconductance
- 0.0025 S
- Max plate voltage
- 175 V
- Max screen voltage
- 175 V
- Max plate dissipation
- 0.75 W
- Max screen dissipation
- 0.4 W
Published ratings and characteristics promoted from the supplied Brimar source.
Source-dependent data
Operating conditions by source
Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.
Data set 02
1963 Mullard
Published operating points and test conditions from this source.
SECTION 1
Pentode
Characteristics
Heater Voltage
6.3 V
Heater Current
200 mA
Plate Voltage
100 V
Screen Voltage
100 V
Plate Current
3 mA
Screen Current
2.25 mA
Transconductance
2500 uS
Plate Resistance
100000 ohm
Plate-Grid Capacitance Maximum
0.025 pF
Shielded
Input Capacitance
4.5 pF
Shielded
Output Capacitance
4.7 pF
Shielded
Grid Voltage
-2 V
Grid Voltage at PlateCurrent=100uA
-8 V
Other
Maximum Plate Voltage
175 V
Maximum Screen Voltage
175 V
Maximum Plate Dissipation
0.75 W
Maximum Screen Dissipation
0.4 W
Maximum Plate Supply Voltage
300 V
Maximum Screen Supply Voltage
300 V