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Voltage Pentode ·Pentode

EF51

High-transconductance pentode developed for ultra-short-wave RF amplification in demanding VHF receiver and broadband stages.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
B8G
Base pins
8
Nominal heater
6.3 V / 350 mA

Description

RF pentode for ultra-short-wave amplification. The supplied Philips source was read for heater data, ratings, characteristics, operating conditions, and capacitances; special secondary-emission quantities are retained as parameters where standard section fields do not apply.

Socket description

Loctal 8-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B8G
Base pins
8
Nominal heater voltage
6.3 V
Nominal heater current
350 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
500000 Ω
Transconductance
0.0095 S
Max plate voltage
300 V
Max screen voltage
300 V
Max plate dissipation
4.5 W
Max screen dissipation
1 W
Max cathode current
20 mA

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

  • Heater current

    350 mA

  • Typical plate voltage

    250 V

  • Typical grid voltage

    -2 V

  • Typical plate current

    14 mA

  • Typical screen current

    2.6 mA

  • Transconductance

    9500 uS

  • Plate resistance

    0.5 Mohm

  • Screen-grid amplification factor

    65

  • Equivalent noise resistance

    100 ohm

Capacitance

  • Plate-grid capacitance maximum

    0.007 pF

  • Plate capacitance

    4 pF

  • Grid input capacitance

    10 pF

  • Grid-heater capacitance maximum

    0.02 pF