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Voltage Pentode ·Pentode

EF50

Mullard high-slope RF pentode for demanding radio, radar, television, and wideband signal-amplifier applications.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
B9G
Socket code
B9G
Base pins
9
Nominal heater
6.3 V / 300 mA

Description

The Mullard EF50 is a single-ended RF pentode with dual control-grid operating modes.

Socket description

Loctal 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
B9G
Socket code
B9G
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

B9G - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1000000 Ω
Transconductance
0.0065 S
Max plate voltage
300 V
Max screen voltage
300 V
Max plate dissipation
3 W
Max screen dissipation
1.7 W
Max cathode current
15 mA

Published ratings and characteristics promoted from the supplied Brimar source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1951 Mullard Valve and Service Manual

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Cutoff characteristic

    Sharp cutoff

Application

  • Application

    Short-wave RF amplification

Data set 02

1958 Mullard Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Heater Voltage

    6.3 V

  • Heater Current

    300 mA

Data set 03

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater Voltage

    6.3 V

  • Heater Current

    300 mA

  • Plate Voltage

    250 V

  • Screen Voltage

    250 V

  • Plate Current

    10 mA

  • Screen Current

    3 mA

  • Transconductance

    6500 uS

  • Plate Resistance

    1000000 ohm

  • Plate-Grid Capacitance Maximum

    0.007 pF

  • Input Capacitance Average

    8.3 pF

  • Output Capacitance Average

    5.2 pF

  • Grid1-Grid2 Capacitance

    2.4 pF

  • Input Damping Resistance

    4000 ohm

    50MHz

  • Output Damping Resistance

    50000 ohm

    50MHz

  • Grid Voltage for 10:1 Transconductance Reduction

    -4.5 V

    ControlledByGrid1

  • Grid Voltage for 10:1 Transconductance Reduction

    -53 V

    ControlledByGrid3

Other

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    300 V

  • Maximum Plate Dissipation

    3 W

  • Maximum Screen Dissipation

    1.7 W

Data set 04

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

  • Heater current

    300 mA

  • Typical plate voltage

    250 V

  • Typical screen voltage

    250 V

  • Typical grid voltage

    -1.55 V

  • Typical plate current

    10 mA

  • Typical screen current

    3 mA

  • Transconductance

    6500 uS

  • Plate resistance

    1 Mohm

Capacitance

  • Plate capacitance

    5.2 pF

  • Grid input capacitance

    8.3 pF

  • Plate-grid capacitance maximum

    0.007 pF

  • Grid-cathode capacitance maximum

    0.01 pF