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Voltage Pentode - High Frequency (single) ·Pentode

EF42

High-transconductance pentode for wideband and high-frequency voltage amplification, providing strong broadband gain and useful signal current.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
RIMLOCK
Socket code
B8A
Base pins
8
Nominal heater
6.3 V / 200 mA

Description

High-transconductance pentode for wideband and high-frequency voltage amplification.

Socket description

Rimlock 8-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
RIMLOCK
Socket code
B8A
Base pins
8
Nominal heater voltage
6.3 V
Nominal heater current
200 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

RIMLOCK - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
600000 Ω
Transconductance
0.0095 S
Max plate voltage
300 V
Max screen voltage
300 V
Max plate dissipation
2.5 W
Max screen dissipation
0.8 W
Max cathode current
30 mA

Published ratings/characteristics promoted from the approved source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1951 Mullard Valve and Service Manual

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Cutoff characteristic

    Sharp cutoff

Data set 02

1953 La Radiotechnique

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    200 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    300 V

  • Maximum Plate Dissipation

    2.5 W

Characteristic

  • Transconductance

    9500 µS

    Typical

  • Amplification Factor

    5700

    Typical

  • Plate Resistance

    600000 ohm

    Typical

Data set 03

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Heater voltage

    6.3 V

    Published heater rating

  • Heater current

    330 mA

    Published heater rating

  • Transconductance

    9000 µS

    RForIFAmplifier

  • Bandwidth

    0.8 MHz

    At 100 MHz

Other

  • Plate voltage

    250 V

    RForIFAmplifier

  • Screen voltage

    250 V

    RForIFAmplifier

  • Grid bias

    -2 V

    RForIFAmplifier

  • Plate current

    10 mA

    RForIFAmplifier

  • Screen current

    2.4 mA

    RForIFAmplifier

Data set 04

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    330 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    300 V

  • Maximum Plate Dissipation

    2.5 W

  • Maximum Screen Dissipation

    0.8 W

  • Maximum Cathode Current

    30 mA

Characteristic

  • Transconductance

    9500 µS

    Typical

  • Amplification Factor

    5700

    Typical

  • Plate Resistance

    600000 ohm

    Typical

Data set 05

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

  • Heater current

    330 mA

  • Typical plate voltage

    250 V

  • Typical plate current

    10 mA

  • Typical screen current

    2.4 mA

  • Transconductance

    9000 uS

  • Screen-grid amplification factor

    83

Capacitance

  • Plate capacitance

    4.3 pF

  • Grid input capacitance

    8.5 pF

  • Plate-grid capacitance maximum

    0.006 pF

  • Grid-heater capacitance maximum

    0.2 pF