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Voltage Pentode ·Pentode

EF40

Low-noise pentode developed specifically for audio preamplification of microphone, pickup, and other weak low-level signals.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
RIMLOCK
Socket code
B8A
Base pins
8
Nominal heater
6.3 V / 200 mA

Description

Low-noise voltage-amplifier pentode for audio-frequency preamplifier service.

Socket description

Rimlock 8-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
RIMLOCK
Socket code
B8A
Base pins
8
Nominal heater voltage
6.3 V
Nominal heater current
200 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

RIMLOCK - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
2300000 Ω
Transconductance
0.002 S
Max plate voltage
300 V
Max screen voltage
200 V
Max plate dissipation
1 W
Max screen dissipation
0.4 W
Max cathode current
15 mA

Published ratings/characteristics promoted from the approved source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1951 Mullard Valve and Service Manual

Published operating points and test conditions from this source.

SECTION 1

Pentode

Application

  • Primary application

    Audio-frequency voltage amplification

Construction

  • Low-microphony construction

    Yes

Data set 02

1953 La Radiotechnique

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    200 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    200 V

  • Maximum Plate Dissipation

    1 W

Characteristic

  • Transconductance

    2000 µS

    Typical

  • Amplification Factor

    4600

    Typical

  • Plate Resistance

    2300000 ohm

    Typical

Data set 03

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Heater voltage

    6.3 V

    Published heater rating

  • Heater current

    200 mA

    Published heater rating

  • Transconductance

    1850 µS

    AFAmplifier

Other

  • Plate voltage

    250 V

    AFAmplifier

  • Screen voltage

    140 V

    AFAmplifier

  • Grid bias

    -2 V

    AFAmplifier

  • Plate current

    3 mA

    AFAmplifier

  • Screen current

    0.55 mA

    AFAmplifier

Data set 04

1967 Mullard Receiving Tubes for Maintenance

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Cross-reference type

    EF86

    Electrical ratings and characteristics

  • Maximum heater-cathode voltage

    50 V

Application

  • Intended service

    High-gain RC-coupled AF voltage amplifier

Data set 05

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    200 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    200 V

  • Maximum Plate Dissipation

    1 W

  • Maximum Screen Dissipation

    0.4 W

  • Maximum Cathode Current

    15 mA

Characteristic

  • Transconductance

    2000 µS

    Typical

  • Amplification Factor

    4600

    Typical

  • Plate Resistance

    2300000 ohm

    Typical

Data set 06

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

  • Heater current

    200 mA

  • Typical plate voltage

    250 V

  • Typical screen voltage

    140 V

  • Typical grid voltage

    -2 V

  • Typical plate current

    3 mA

  • Typical screen current

    0.55 mA

  • Transconductance

    1850 uS

  • Screen-grid amplification factor

    38

  • Plate resistance

    2.5 Mohm

Capacitance

  • Grid input capacitance

    4.5 pF

  • Plate capacitance

    5.2 pF

  • Plate-grid capacitance maximum

    0.04 pF

  • Grid-heater capacitance maximum

    0.002 pF