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Voltage Triode Pentode ·Pentode-Triode

ECF86

Triode-pentode combination for high-frequency electronic service; available source material does not establish a narrower functional role confidently.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
9MP
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 390 mA

Description

Triode-pentode for VHF oscillator and frequency-converter service.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9MP
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
390 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9MP - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
9000 Ω
Transconductance
0.0065 S
Amplification factor
55
Max plate voltage
250 V
Max plate dissipation
1.5 W
Max cathode current
20 mA

Published maximum ratings and typical characteristics promoted from the approved source.

Section 2

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
250000 Ω
Transconductance
0.0065 S
Amplification factor
60
Max plate voltage
250 V
Max screen voltage
250 V
Max plate dissipation
2.5 W
Max screen dissipation
0.5 W
Max cathode current
25 mA

Published maximum ratings and typical characteristics promoted from the approved source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Amperex Condensed

Published operating points and test conditions from this source.

SECTION 1

Triode

Characteristic

  • Heater voltage

    6.3 V

    Published heater rating

  • Heater current

    340 mA

    Published heater rating

Other

  • Triode plate voltage

    100 V

    TriodeSection Oscillator

  • Triode control-grid bias

    -3 V

    TriodeSection Oscillator

  • Triode plate current

    14 mA

    TriodeSection Oscillator

SECTION 2

Pentode

Other

  • Pentode plate voltage

    170 V

    PentodeSection Mixer

  • Pentode screen voltage

    150 V

    PentodeSection Mixer

  • Pentode control-grid bias

    -1.5 V

    PentodeSection Mixer

  • Pentode plate current

    10 mA

    PentodeSection Mixer

  • Pentode screen current

    3.3 mA

    PentodeSection Mixer

Characteristic

  • Pentode amplification factor

    60

    PentodeSection Mixer

  • Pentode plate resistance

    350000 ohm

    PentodeSection Mixer

  • Pentode transconductance

    12000 µS

    PentodeSection Mixer

Data set 02

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Triode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    390 mA

    Published nominal value

Other

  • Maximum plate dissipation

    1.5 W

    Published maximum rating

SECTION 2

Pentode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    390 mA

    Published nominal value

  • Transconductance

    12000 µS

    Published nominal or operating characteristic

  • Equivalent noise resistance

    1000 ohm

    Pentode section

Other

  • Maximum plate dissipation

    2 W

    Published maximum rating

Data set 03

1972 Philips Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    390 mA

    Nominal

  • Maximum Plate Voltage

    250 V

  • Maximum Plate Dissipation

    1.5 W

  • Maximum Cathode Current

    20 mA

Characteristic

  • Transconductance

    6500 µS

    Typical

  • Amplification Factor

    55

    Typical

  • Plate Resistance

    9000 ohm

    Typical

SECTION 2

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    390 mA

    Nominal

  • Maximum Plate Voltage

    250 V

  • Maximum Screen Voltage

    250 V

  • Maximum Plate Dissipation

    2.5 W

  • Maximum Screen Dissipation

    0.5 W

  • Maximum Cathode Current

    25 mA

Characteristic

  • Transconductance

    6500 µS

    Typical

  • Plate Resistance

    250000 ohm

    Typical

Data set 04

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • For fixed-bias operation 0.5

    0.25 MΩ

    Published in approved ECF86 target datasheet entry; Section1

  • For cathode-bias operation 1

    1 MΩ

    Published in approved ECF86 target datasheet entry; Section1

  • Heater Voltage (ac/dc) 5.3 6.3

    7.2 V

    Published in approved ECF86 target datasheet entry; Section1

  • Heater Current

    300 mA

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Voltage 125

    250 V

    Published in approved ECF86 target datasheet entry; Section1

  • Grid-No.2 (Screen-Grid) Voltage

    150 V

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Dissipation 1.5

    2 W

    Published in approved ECF86 target datasheet entry; Section1

  • Grid-No.2 Input

    0.5 W

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Voltage 100

    170 V

    Published in approved ECF86 target datasheet entry; Section1

  • Grid-No.2 Voltage

    160 V

    Published in approved ECF86 target datasheet entry; Section1

  • Voltage —3

    -1.2 V

    Published in approved ECF86 target datasheet entry; Section1

  • Transconductance 5500

    12000 µS

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Current 14

    10 mA

    Published in approved ECF86 target datasheet entry; Section1

  • Grid-No.2 Current

    3.3 mA

    Published in approved ECF86 target datasheet entry; Section1

  • For fixed-bias operation

    0.25 MΩ

    Published in approved ECF86 target datasheet entry; Section1

  • For cathode-bias operation 0.5

    0.5 MΩ

    Published in approved ECF86 target datasheet entry; Section1

  • amperes, 0.6; warm-up time (average),

    11 seconds

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Voltage 330

    330 V

    Published in approved ECF86 target datasheet entry; Section1

  • Grid-No.2 (Screen-Grid) Supply Voltage

    330 V

    Published in approved ECF86 target datasheet entry; Section1

  • 0

    0 V

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Dissipation 2.5

    2.5 W

    Published in approved ECF86 target datasheet entry; Section1

  • For grid-No.2 voltages up to

    165 V

    Published in approved ECF86 target datasheet entry; Section1

  • For grid-No.2 voltages between 165 and

    330 V

    Published in approved ECF86 target datasheet entry; Section1

Characteristic

  • Plate Resistance (Approx.)

    0.35 MΩ

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Voltage 125

    125 V

    Published in approved ECF86 target datasheet entry; Section1

  • Grid-No.2 Voltage

    125 V

    Published in approved ECF86 target datasheet entry; Section1

  • Grid-No.l Voltage 1 —

    -1 V

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Resistance (Approx.) 5000

    150000 Ω

    Published in approved ECF86 target datasheet entry; Section1

  • Transconductance 7000

    10000 µS

    Published in approved ECF86 target datasheet entry; Section1

  • Plate Current 12.5

    12 mA

    Published in approved ECF86 target datasheet entry; Section1

  • 20 iiA —

    -7 V

    Published in approved ECF86 target datasheet entry; Section1

SECTION 2

Pentode

Other

  • For fixed-bias operation 0.5

    0.25 MΩ

    Published in approved ECF86 target datasheet entry; Section2

  • For cathode-bias operation 1

    1 MΩ

    Published in approved ECF86 target datasheet entry; Section2

  • Heater Voltage (ac/dc) 5.3 6.3

    7.2 V

    Published in approved ECF86 target datasheet entry; Section2

  • Heater Current

    300 mA

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Voltage 125

    250 V

    Published in approved ECF86 target datasheet entry; Section2

  • Grid-No.2 (Screen-Grid) Voltage

    150 V

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Dissipation 1.5

    2 W

    Published in approved ECF86 target datasheet entry; Section2

  • Grid-No.2 Input

    0.5 W

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Voltage 100

    170 V

    Published in approved ECF86 target datasheet entry; Section2

  • Grid-No.2 Voltage

    160 V

    Published in approved ECF86 target datasheet entry; Section2

  • Voltage —3

    -1.2 V

    Published in approved ECF86 target datasheet entry; Section2

  • Transconductance 5500

    12000 µS

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Current 14

    10 mA

    Published in approved ECF86 target datasheet entry; Section2

  • Grid-No.2 Current

    3.3 mA

    Published in approved ECF86 target datasheet entry; Section2

  • For fixed-bias operation

    0.25 MΩ

    Published in approved ECF86 target datasheet entry; Section2

  • For cathode-bias operation 0.5

    0.5 MΩ

    Published in approved ECF86 target datasheet entry; Section2

  • amperes, 0.6; warm-up time (average),

    11 seconds

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Voltage 330

    330 V

    Published in approved ECF86 target datasheet entry; Section2

  • Grid-No.2 (Screen-Grid) Supply Voltage

    330 V

    Published in approved ECF86 target datasheet entry; Section2

  • 0

    0 V

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Dissipation 2.5

    2.5 W

    Published in approved ECF86 target datasheet entry; Section2

  • For grid-No.2 voltages up to

    165 V

    Published in approved ECF86 target datasheet entry; Section2

  • For grid-No.2 voltages between 165 and

    330 V

    Published in approved ECF86 target datasheet entry; Section2

Characteristic

  • Plate Resistance (Approx.)

    0.35 MΩ

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Voltage 125

    125 V

    Published in approved ECF86 target datasheet entry; Section2

  • Grid-No.2 Voltage

    125 V

    Published in approved ECF86 target datasheet entry; Section2

  • Grid-No.l Voltage 1 —

    -1 V

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Resistance (Approx.) 5000

    150000 Ω

    Published in approved ECF86 target datasheet entry; Section2

  • Transconductance 7000

    10000 µS

    Published in approved ECF86 target datasheet entry; Section2

  • Plate Current 12.5

    12 mA

    Published in approved ECF86 target datasheet entry; Section2

  • 20 iiA —

    -7 V

    Published in approved ECF86 target datasheet entry; Section2

Data set 05

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Heater voltage Vg

    6.3 V

    Heater voltage Vg 6.3 V

  • Heater current I

    390 mA

    Heater current I 390 mA

  • Cathode to heater voltage Vkf max.

    100 V

    Cathode to heater voltage Vkf max. 100 V

SECTION 2

Pentode

Other

  • Cathode to heater voltage Vs max.

    100 V

    Cathode to heater voltage Vs max. 100 V