ECF803

ECF803 indirectly heated triode-pentode for mixer, oscillator and amplifier service in television and VHF receivers.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 2
Base: -
Socket code: -
Base pins: -
Nominal heater: 6.3 V / 380 mA

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: -
Nominal heater voltage: 6.3 V
Nominal heater current: 380 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances

Transconductance: 0.009 S
Amplification factor: 20
Max plate voltage: 125 V
Max plate dissipation: 1.5 W
Max cathode current: 20 mA

ECF803 triode, source page 419: switch-on anode max 550 V; typical Va 100 V, Ia 15 mA, gm 9 mA/V, mu 20. Capacitances input 3.3 pF, output 1.7 pF, transfer 1.8 pF. Max grid circuit resistance 500 kΩ.

Section 2

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 350000 Ω
Transconductance: 0.011 S
Max plate voltage: 250 V
Max screen voltage: 250 V
Max plate dissipation: 2 W
Max cathode current: 18 mA

ECF803 pentode, source page 419: switch-on anode/screen maximum 550 V. Typical Va 170 V, Vg2 120 V, Ia 10 mA, Ig2 3 mA, gm 11 mA/V, rp 350 kΩ. Screen dissipation max 0.3 W for -Vg1 >=2 V; 0.4 W for 1.5 < -Vg1 < 2 V; 0.45 W for -Vg1 <=1.5 V. Input 6.2 pF, output 3.7 pF, transfer <0.009 pF. Grid1 circuit resistance max 2.2 MΩ.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1981 Russian Tubes Katsnelson and Larionov

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

Plate voltage
100 V
ECF803 specific values, Katsnelson and Larionov 1981, p.419
Plate current
15 mA
ECF803 specific values, Katsnelson and Larionov 1981, p.419

Characteristic

Transconductance
9000 µS
ECF803 specific values, Katsnelson and Larionov 1981, p.419

SECTION 2

Pentode

Other

Plate voltage
170 V
ECF803 specific values, Katsnelson and Larionov 1981, p.419
Screen voltage
120 V
ECF803 specific values, Katsnelson and Larionov 1981, p.419
Plate current
10 mA
ECF803 specific values, Katsnelson and Larionov 1981, p.419
Screen current
3 mA
ECF803 specific values, Katsnelson and Larionov 1981, p.419

Characteristic

Transconductance
11000 µS
ECF803 specific values, Katsnelson and Larionov 1981, p.419
Plate resistance
350000 Ω
ECF803 specific values, Katsnelson and Larionov 1981, p.419