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Voltage Triode Pentode ·Pentode-Triode

ECF801

Triode-pentode combination for electronic signal service; available source material does not establish a narrower functional application confidently.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
9QA
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 410 mA

Description

Triode-pentode for VHF frequency-converter service.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9QA
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
410 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9QA - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
9000 Ω
Transconductance
0.0085 S
Amplification factor
55
Max plate voltage
300 V
Max plate dissipation
1.5 W
Max cathode current
25 mA

Published maximum ratings and typical characteristics promoted from the approved source.

Section 2

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
250000 Ω
Transconductance
0.0075 S
Max plate voltage
300 V
Max screen voltage
300 V
Max plate dissipation
2.5 W
Max screen dissipation
0.6 W
Max cathode current
30 mA

Published maximum ratings and typical characteristics promoted from the approved source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Triode

Characteristic

  • Heater voltage

    6.3 V

    Published heater rating

  • Heater current

    410 mA

    Published heater rating

  • Heater voltage

    6.3 V

    Published rating

  • Heater current

    410 mA

    Published rating

Other

  • Application

    VHF television tuner frequency changer

    Published description

Data set 02

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Triode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    410 mA

    Published nominal value

Other

  • Maximum plate dissipation

    1.5 W

    Published maximum rating

SECTION 2

Pentode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    410 mA

    Published nominal value

Other

  • Maximum plate dissipation

    2 W

    Published maximum rating

  • Application

    VHF frequency converter

    Printed source application

Data set 03

1972 Philips Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    410 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Plate Dissipation

    1.5 W

  • Maximum Cathode Current

    25 mA

Characteristic

  • Transconductance

    8500 µS

    Typical

  • Amplification Factor

    55

    Typical

  • Plate Resistance

    9000 ohm

    Typical

SECTION 2

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    410 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    300 V

  • Maximum Plate Dissipation

    2.5 W

  • Maximum Screen Dissipation

    0.6 W

  • Maximum Cathode Current

    30 mA

Characteristic

  • Transconductance

    7500 µS

    Typical

  • Plate Resistance

    250000 ohm

    Typical

Data set 04

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • For grid-resistor-bias operation*

    1 MΩ

    Published in approved ECF801 target datasheet entry; Section1

  • # Pulse duration must not exceed 15% of a horizontal scanning cycle (

    10 microseconds

    Published in approved ECF801 target datasheet entry; Section1

  • Heater Current 4.1 5.6 6.3

    8 V

    Published in approved ECF801 target datasheet entry; Section1

  • Peak Heater-Cathode 0.6 0.45 0.41

    300 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Plate-Supply Voltage 600

    600 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Plate Voltage 140

    275 V

    Published in approved ECF801 target datasheet entry; Section1

  • Grid-No.2 (Screen-Grid) Supply Voltage

    600 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Grid-No.2 Voltage

    275 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Grid-No.l (Control-Grid) Voltage

    -50 V

    Published in approved ECF801 target datasheet entry; Section1

  • Cathode Current 22

    20 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Dissipation 1.8

    2.4 W

    Published in approved ECF801 target datasheet entry; Section1

  • Grid-No.2 Input*

    0.55 W

    Published in approved ECF801 target datasheet entry; Section1

  • DC Plate Voltage 100

    170 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Grid-No.2 Voltage

    120 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Grid-No.l Voltage —3

    -1.2 V

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Resistance (Approx.)

    0.35 MΩ

    Published in approved ECF801 target datasheet entry; Section1

  • receivers to

    50 V

    Published in approved ECF801 target datasheet entry; Section1

  • to

    0.5 W

    Published in approved ECF801 target datasheet entry; Section1

  • is

    0.36 W

    Published in approved ECF801 target datasheet entry; Section1

  • Heater Voltage (ac/dc) 2.3 2.8 4

    6.3 V

    Published in approved ECF801 target datasheet entry; Section1

  • Heater Current 0.6 0.45 0.3

    180 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Negative-bias value

    50 V

    Published in approved ECF801 target datasheet entry; Section1

  • Positive-bias value

    0 V

    Published in approved ECF801 target datasheet entry; Section1

  • Average Cathode Current

    22 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Dissipation

    2.5 W

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Voltage

    135 V

    Published in approved ECF801 target datasheet entry; Section1

  • Grid Voltage

    -1 V

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Resistance (Approx.)

    5400 Ω

    Published in approved ECF801 target datasheet entry; Section1

  • Transconductan'*.e

    15000 µS

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Current

    11.5 mA

    Published in approved ECF801 target datasheet entry; Section1

Characteristic

  • Plate Current 15

    10 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Grid-No.2 Current

    3 mA

    Published in approved ECF801 target datasheet entry; Section1

  • For fixed-bias operation 0.5

    1 MΩ

    Published in approved ECF801 target datasheet entry; Section1

  • For cathode-bias operation 0.5

    2.2 MΩ

    Published in approved ECF801 target datasheet entry; Section1

  • voltage to

    100 V

    Published in approved ECF801 target datasheet entry; Section1

  • Input Resistance*

    275 Ω

    Published in approved ECF801 target datasheet entry; Section1

  • Input Capacitance*

    11.2 pF

    Published in approved ECF801 target datasheet entry; Section1

  • Grid Voltage (Approx.) for transconductance of

    150 µS

    Published in approved ECF801 target datasheet entry; Section1

  • Grid Voltage (Approx.) for transconductance of

    1500 µS

    Published in approved ECF801 target datasheet entry; Section1

  • Grid Voltage (Approx.) for transconductance of 1500 /imhos

    -2.5 V

    Published in approved ECF801 target datasheet entry; Section1

Capacitance

  • Grid to Plate

    0.62 pF

    Published in approved ECF801 target datasheet entry; Section1

  • Grid to Cathode, Heater, and Internal Shield

    5 pF

    Published in approved ECF801 target datasheet entry; Section1

  • Plate to Cathode, Heater, and Internal Shield

    3.5 pF

    Published in approved ECF801 target datasheet entry; Section1

SECTION 2

Pentode

Other

  • For grid-resistor-bias operation*

    1 MΩ

    Published in approved ECF801 target datasheet entry; Section2

  • # Pulse duration must not exceed 15% of a horizontal scanning cycle (

    10 microseconds

    Published in approved ECF801 target datasheet entry; Section2

  • Heater Current 4.1 5.6 6.3

    8 V

    Published in approved ECF801 target datasheet entry; Section2

  • Peak Heater-Cathode 0.6 0.45 0.41

    300 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Plate-Supply Voltage 600

    600 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Plate Voltage 140

    275 V

    Published in approved ECF801 target datasheet entry; Section2

  • Grid-No.2 (Screen-Grid) Supply Voltage

    600 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Grid-No.2 Voltage

    275 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Grid-No.l (Control-Grid) Voltage

    -50 V

    Published in approved ECF801 target datasheet entry; Section2

  • Cathode Current 22

    20 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Dissipation 1.8

    2.4 W

    Published in approved ECF801 target datasheet entry; Section2

  • Grid-No.2 Input*

    0.55 W

    Published in approved ECF801 target datasheet entry; Section2

  • DC Plate Voltage 100

    170 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Grid-No.2 Voltage

    120 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Grid-No.l Voltage —3

    -1.2 V

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Resistance (Approx.)

    0.35 MΩ

    Published in approved ECF801 target datasheet entry; Section2

  • receivers to

    50 V

    Published in approved ECF801 target datasheet entry; Section2

  • to

    0.5 W

    Published in approved ECF801 target datasheet entry; Section2

  • is

    0.36 W

    Published in approved ECF801 target datasheet entry; Section2

  • Heater Voltage (ac/dc) 2.3 2.8 4

    6.3 V

    Published in approved ECF801 target datasheet entry; Section2

  • Heater Current 0.6 0.45 0.3

    180 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Negative-bias value

    50 V

    Published in approved ECF801 target datasheet entry; Section2

  • Positive-bias value

    0 V

    Published in approved ECF801 target datasheet entry; Section2

  • Average Cathode Current

    22 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Dissipation

    2.5 W

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Voltage

    135 V

    Published in approved ECF801 target datasheet entry; Section2

  • Grid Voltage

    -1 V

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Resistance (Approx.)

    5400 Ω

    Published in approved ECF801 target datasheet entry; Section2

  • Transconductan'*.e

    15000 µS

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Current

    11.5 mA

    Published in approved ECF801 target datasheet entry; Section2

Characteristic

  • Plate Current 15

    10 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Grid-No.2 Current

    3 mA

    Published in approved ECF801 target datasheet entry; Section2

  • For fixed-bias operation 0.5

    1 MΩ

    Published in approved ECF801 target datasheet entry; Section2

  • For cathode-bias operation 0.5

    2.2 MΩ

    Published in approved ECF801 target datasheet entry; Section2

  • voltage to

    100 V

    Published in approved ECF801 target datasheet entry; Section2

  • Input Resistance*

    275 Ω

    Published in approved ECF801 target datasheet entry; Section2

  • Input Capacitance*

    11.2 pF

    Published in approved ECF801 target datasheet entry; Section2

  • Grid Voltage (Approx.) for transconductance of

    150 µS

    Published in approved ECF801 target datasheet entry; Section2

  • Grid Voltage (Approx.) for transconductance of

    1500 µS

    Published in approved ECF801 target datasheet entry; Section2

  • Grid Voltage (Approx.) for transconductance of 1500 /imhos

    -2.5 V

    Published in approved ECF801 target datasheet entry; Section2

Capacitance

  • Grid to Plate

    0.62 pF

    Published in approved ECF801 target datasheet entry; Section2

  • Grid to Cathode, Heater, and Internal Shield

    5 pF

    Published in approved ECF801 target datasheet entry; Section2

  • Plate to Cathode, Heater, and Internal Shield

    3.5 pF

    Published in approved ECF801 target datasheet entry; Section2

Data set 05

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Heater voltage Ve

    6.3 V

    Heater voltage Ve 6.3 V

  • Heater current I¢

    410 mA

    Heater current I¢ 0.41 A