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Voltage Triode Pentode ·Pentode-Triode

ECF200

Triode-pentode combination for electronic signal service; available source material does not establish a narrower functional application confidently.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
-
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 410 mA

Description

Triode-pentode for television pulse processing and fixed-mu IF amplification.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
410 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
6000 Ω
Transconductance
0.0065 S
Max plate voltage
250 V
Max plate dissipation
1.5 W
Max cathode current
18 mA

Source-published values promoted where directly stated; additional values retained in parameter table.

Section 2

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
300000 Ω
Transconductance
0.0055 S
Max plate voltage
250 V
Max screen voltage
250 V
Max plate dissipation
2.1 W
Max screen dissipation
0.75 W
Max cathode current
20 mA

Source-published values promoted where directly stated; additional values retained in parameter table.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Triode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    410 mA

    Published nominal value

Other

  • Maximum plate dissipation

    1.5 W

    Published maximum rating

SECTION 2

Pentode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    410 mA

    Published nominal value

Other

  • Maximum plate dissipation

    2.1 W

    Published maximum rating

  • Application

    Television pulse processing and IF amplification

    Printed source application

Data set 02

1972 Philips Receiving Tubes

Published operating points and test conditions from this source.

SECTION 2

Pentode

Other

  • Heater voltage V¢

    6.3 V

  • Heater current If

    410 mA

Data set 03

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Plate Voltage 275

    275 V

    Published in approved ECF200 target datasheet entry; Section1

  • 0

    0 V

    Published in approved ECF200 target datasheet entry; Section1

  • Ptate D'ssipation 1.7

    2.3 W

    Published in approved ECF200 target datasheet entry; Section1

  • For grid-No.2 voltages up to

    137.5 V

    Published in approved ECF200 target datasheet entry; Section1

  • For grid-No.2 voltages between 137.5 and

    275 V

    Published in approved ECF200 target datasheet entry; Section1

  • 20 11K —7

    -6.5 V

    Published in approved ECF200 target datasheet entry; Section1

  • Heater Voltage

    6.3 V

    Published in approved ECF200 target datasheet entry; Section1

  • Heater Current

    410 mA

    Published in approved ECF200 target datasheet entry; Section1

  • Pentode Grid No.l to Triode Grid <

    1.2 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Pentode Plate to Triode Plate <

    1.5 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Plate Supply Voltage 550

    550 V

    Published in approved ECF200 target datasheet entry; Section1

  • Plate Voltage 250

    250 V

    Published in approved ECF200 target datasheet entry; Section1

  • Cathode Current 18

    18 mA

    Published in approved ECF200 target datasheet entry; Section1

  • Plate Dissipation 1.5

    2.1 W

    Published in approved ECF200 target datasheet entry; Section1

  • Grid-No. 2 Input

    0.7 W

    Published in approved ECF200 target datasheet entry; Section1

  • Grid-No. 1-Circuit Resistance 1

    1 MΩ

    Published in approved ECF200 target datasheet entry; Section1

  • * With a maximum duty factor of 0.18 and maximum pulse duration of

    18 microseconds

    Published in approved ECF200 target datasheet entry; Section1

  • Heater Voltage (ac/dc)

    6.3 V

    Published in approved ECF200 target datasheet entry; Section1

  • Heater Current

    1.25 A

    Published in approved ECF200 target datasheet entry; Section1

Characteristic

  • t,ee 125

    125 V

    Published in approved ECF200 target datasheet entry; Section1

  • Grid-No.2 Voltage

    125 V

    Published in approved ECF200 target datasheet entry; Section1

  • Plate Resistance (Appiox.) 6000

    300000 Ω

    Published in approved ECF200 target datasheet entry; Section1

  • Transconductance 6500

    5500 µS

    Published in approved ECF200 target datasheet entry; Section1

  • Plate Voltage 170

    160 V

    Published in approved ECF200 target datasheet entry; Section1

  • Grid-No.3 (Suppressor-Grid) Voltage

    0 V

    Published in approved ECF200 target datasheet entry; Section1

  • Grid-No.2 Voltage

    135 V

    Published in approved ECF200 target datasheet entry; Section1

  • Grid-No.l (Control-Grid) Voltage —1

    -1.7 V

    Published in approved ECF200 target datasheet entry; Section1

  • Transconductance 4800

    14000 µS

    Published in approved ECF200 target datasheet entry; Section1

  • Plate Current 8.6

    13 mA

    Published in approved ECF200 target datasheet entry; Section1

  • Grid-No.2 Current

    5 mA

    Published in approved ECF200 target datasheet entry; Section1

Capacitance

  • Plate to All Other Elements (except grid)

    3 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Grid to All Other Elements (except plate)

    2.5 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Plate to Grid

    2 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Plate to All Other Elements (except grid No.l)

    3.5 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Grid No.l to All Other Elements (except plate)

    6.5 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Grid No.l to Cathode

    4 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Plate to Grid No.l <

    6.5 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Grid No.l to Grid No.2

    1.8 pF

    Published in approved ECF200 target datasheet entry; Section1

  • Pentode Grid No.l to Triode Plate

    15 pF

    Published in approved ECF200 target datasheet entry; Section1

SECTION 2

Pentode

Other

  • Plate Voltage 275

    275 V

    Published in approved ECF200 target datasheet entry; Section2

  • 0

    0 V

    Published in approved ECF200 target datasheet entry; Section2

  • Ptate D'ssipation 1.7

    2.3 W

    Published in approved ECF200 target datasheet entry; Section2

  • For grid-No.2 voltages up to

    137.5 V

    Published in approved ECF200 target datasheet entry; Section2

  • For grid-No.2 voltages between 137.5 and

    275 V

    Published in approved ECF200 target datasheet entry; Section2

  • 20 11K —7

    -6.5 V

    Published in approved ECF200 target datasheet entry; Section2

  • Heater Voltage

    6.3 V

    Published in approved ECF200 target datasheet entry; Section2

  • Heater Current

    410 mA

    Published in approved ECF200 target datasheet entry; Section2

  • Pentode Grid No.l to Triode Grid <

    1.2 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Pentode Plate to Triode Plate <

    1.5 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Plate Supply Voltage 550

    550 V

    Published in approved ECF200 target datasheet entry; Section2

  • Plate Voltage 250

    250 V

    Published in approved ECF200 target datasheet entry; Section2

  • Cathode Current 18

    18 mA

    Published in approved ECF200 target datasheet entry; Section2

  • Plate Dissipation 1.5

    2.1 W

    Published in approved ECF200 target datasheet entry; Section2

  • Grid-No. 2 Input

    0.7 W

    Published in approved ECF200 target datasheet entry; Section2

  • Grid-No. 1-Circuit Resistance 1

    1 MΩ

    Published in approved ECF200 target datasheet entry; Section2

  • * With a maximum duty factor of 0.18 and maximum pulse duration of

    18 microseconds

    Published in approved ECF200 target datasheet entry; Section2

  • Heater Voltage (ac/dc)

    6.3 V

    Published in approved ECF200 target datasheet entry; Section2

  • Heater Current

    1.25 A

    Published in approved ECF200 target datasheet entry; Section2

Characteristic

  • t,ee 125

    125 V

    Published in approved ECF200 target datasheet entry; Section2

  • Grid-No.2 Voltage

    125 V

    Published in approved ECF200 target datasheet entry; Section2

  • Plate Resistance (Appiox.) 6000

    300000 Ω

    Published in approved ECF200 target datasheet entry; Section2

  • Transconductance 6500

    5500 µS

    Published in approved ECF200 target datasheet entry; Section2

  • Plate Voltage 170

    160 V

    Published in approved ECF200 target datasheet entry; Section2

  • Grid-No.3 (Suppressor-Grid) Voltage

    0 V

    Published in approved ECF200 target datasheet entry; Section2

  • Grid-No.2 Voltage

    135 V

    Published in approved ECF200 target datasheet entry; Section2

  • Grid-No.l (Control-Grid) Voltage —1

    -1.7 V

    Published in approved ECF200 target datasheet entry; Section2

  • Transconductance 4800

    14000 µS

    Published in approved ECF200 target datasheet entry; Section2

  • Plate Current 8.6

    13 mA

    Published in approved ECF200 target datasheet entry; Section2

  • Grid-No.2 Current

    5 mA

    Published in approved ECF200 target datasheet entry; Section2

Capacitance

  • Plate to All Other Elements (except grid)

    3 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Grid to All Other Elements (except plate)

    2.5 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Plate to Grid

    2 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Plate to All Other Elements (except grid No.l)

    3.5 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Grid No.l to All Other Elements (except plate)

    6.5 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Grid No.l to Cathode

    4 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Plate to Grid No.l <

    6.5 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Grid No.l to Grid No.2

    1.8 pF

    Published in approved ECF200 target datasheet entry; Section2

  • Pentode Grid No.l to Triode Plate

    15 pF

    Published in approved ECF200 target datasheet entry; Section2

Data set 04

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 2

Pentode

Other

  • Heater voltage V¢

    6.3 V

    Heater voltage V¢ 6.3 V

  • Heater current If

    410 mA

    Heater current If 410 mA