Voltage Radio Detector Converter ·Diode-Diode-Pentode
Double-diode variable-mu pentode for radio IF amplification, detection, and automatic gain control. The pentode provides controllable gain while paired diodes handle detector and control-voltage rectification.
Dual-diode pentode for detection and RF or IF amplification; source also designates 6DC8.
Small-button Noval 9-contact
General specifications
Properties common to every published source and operating point.
Electrical assignments shared by every tube using this base designation.
No verified pinout is recorded for this base designation.
3 physical sections, each with unique specifications.
Section 1
Pentode section; representative characteristic point uses 250 V plate and 100 V screen.
Section 2
Detector diode I.
Section 3
Detector diode II.
Source-dependent data
Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.
Data set 01
Published operating points and test conditions from this source.
Interelectrode capacitances
Published
See source sheet for electrode-specific capacitance values
Interelectrode capacitances
Published
See source sheet for electrode-specific capacitance values
Interelectrode capacitances
Published
See source sheet for electrode-specific capacitance values
Data set 02
Published operating points and test conditions from this source.
Cutoff characteristic
Variable-mu
Application
RF / IF amplifier
Application
AM detector
Data set 03
Published operating points and test conditions from this source.
Plate voltage
250 V
IFAmplifier
Screen voltage
100 V
IFAmplifier
Control-grid bias
-2 V
IFAmplifier
Plate current
9 mA
IFAmplifier
Screen current
2.7 mA
IFAmplifier
Amplification factor
20
IFAmplifier
Plate resistance
1000000 ohm
IFAmplifier
Heater voltage
6.3 V
Published heater rating
Heater current
300 mA
Published heater rating
Data set 04
Published operating points and test conditions from this source.
Plate voltage
250 V
RFIFAmplifier
Screen voltage
100 V
RFIFAmplifier
Control-grid voltage
-2 V
RFIFAmplifier
Plate current
9 mA
RFIFAmplifier
Screen current
2.7 mA
RFIFAmplifier
Transconductance
3800 µS
Section1
Plate resistance
1000000 Ω
Section1
Plate capacitance
5.2 pF
Section1
Grid capacitance
5 pF
Section1
Grid-to-plate capacitance maximum
0.0025 pF
Section1
Diode capacitance
2.5 pF
Diode1
Diode capacitance
2.5 pF
Diode2
Data set 05
Published operating points and test conditions from this source.
Plate Current
9 mA
Va=250V;Vg2=100V
Screen Current
2.7 mA
Va=250V;Vg2=100V
Transconductance
3800 uS
Va=250V;Vg2=100V
Plate Resistance
1 Mohm
Va=250V;Vg2=100V
Control-to-Screen Amplification Factor
20
Va=250V;Vg2=100V
Plate Resistance
1000000 ohm
Transconductance
3800 uS
Amplification Factor
20
Maximum Plate Voltage
300 V
Maximum Screen Voltage
300 V
Maximum Plate Dissipation
2.25 W
Maximum Screen Dissipation
0.45 W
Maximum Cathode Current
16.5 mA
Interelectrode Capacitance Data Published
1
SourceTablePresent
Maximum Anode Current
800 uA
EachDiode
Maximum Peak Anode Current
5 mA
EachDiode
Peak Inverse Voltage
200 V
Nominal Output Current
0.8 mA
Peak Forward Current
5 mA
Interelectrode Capacitance Data Published
1
SourceTablePresent
Data set 06
Published operating points and test conditions from this source.
Application
RF_IF_Amplifier text
Application
Detector text
Data set 07
Published operating points and test conditions from this source.
Anode current Ia
9 mA
Transconductance S
4.5 mA/V
Heater voltage Vs
6.3 V
Heater current It
300 mA
Anode voltage Vao max
- to 550 V
Maximum
Anode dissipation W, max
- to 2.25 W
Maximum
Grid No. 2 voltage Vg20 max
- to 550 V
Maximum
at anode current I; max
- to 4 mA
Maximum
at anode current I; min
- to 8 mA
Maximum
Grid No. 2 dissipation Wg2 max
- to 0.45 W
Maximum
Cathode current Ix max
- to 16.5 mA
Maximum
Anode to all except grid No.1 Ca(gl)
5.2 pF
Grid No.1 to all except anode Cgl(a)
5 pF
Anode to grid No.1 Cagl max
- to 0.0025 pF
Maximum
Grid No. 1 to heater Cglf max
- to 0.05 pF
Maximum
Diode No.1 to grid No.1 Ca)g; max
- to 0.0008 pF
Maximum
Diode No.2 to grid No.1 Cdzg1 max
- to 0.001 pF
Maximum
Diode No.1 to anode Cdla max
- to 0.15 pF
Maximum
Diode No.2 to anode Cdza max
- to 0.025 pF
Maximum
Anode voltage Va 250 250 200
170 V
Grid No. 2 voltage Vg, 100 80 100
100 V
Anode current I 9 9 11
12 mA
Grid No.2 current Ig, 2.7 2.7 3.3
4 mA
Transconductance S 3.8 4.5 4.5
5 mA/V
Internal resistance R; 1.0 0.9 0.6
0.4 MQ
Supply voltage Vi 250 200
250 V
Grid No. 1 voltage Vg, =20 =20 -L5 -20 -1 1y
-20 v
Transconductance S 3.8 0.2 4.5 0.12 4.5
0.2 mA/V
Diode No.l to all Cd1
2.5 pF
Diode No.2 to all Cd2
2.5 pF
Diode No.1 to diode No.2 Cdldz max
- to 0.25 pF
Maximum
Diode No.1 to heater Cdlf max
- to 0.015 pF
Maximum
Diode No. 2 to heater Cdzf max
- to 0.003 pF
Maximum
Diode voltage, negative peak 'Vdp max
- to 200 V
Maximum
Diode current, average Iq max
- to 0.8 mA
Maximum
peak Idp max
- to 5 mA
Maximum
Cathode to heater voltage Vs max
- to 100 V
Maximum
l) With supply from a storage battery and vibrator the max. voltage is
- to 250 V
Maximum
Data set 08
Published operating points and test conditions from this source.
HeaterVoltageNominal
6.3 V
Nominal
HeaterCurrentNominal
300 mA
Nominal
Maximum Plate Voltage
300 V
Maximum Screen Voltage
300 V
Maximum Plate Dissipation
2.25 W
Maximum Screen Dissipation
0.45 W
Maximum Cathode Current
16.5 mA
Transconductance
3810 µS
Typical
Amplification Factor
20
Typical
Plate Resistance
1010000 ohm
Typical
HeaterVoltageNominal
6.3 V
Nominal
HeaterCurrentNominal
300 mA
Nominal
Maximum Cathode Current
0.8 mA
Maximum Peak Inverse Voltage
200 V
Rectified Output Current
0.8 mA
PeakForwardCurrent
5 mA
HeaterVoltageNominal
6.3 V
Nominal
HeaterCurrentNominal
300 mA
Nominal
Maximum Cathode Current
0.8 mA
Maximum Peak Inverse Voltage
200 V
Rectified Output Current
0.8 mA
PeakForwardCurrent
5 mA
Data set 09
Published operating points and test conditions from this source.
Heater voltage
6.3 V
Heater current
300 mA
Typical plate voltage
250 V
Transconductance
4500 uS
Plate resistance
0.9 Mohm
Screen-grid amplification factor
20
Plate current
9 mA
PlateVoltage=250V;ScreenVoltage=100V
Screen current
2.7 mA
PlateVoltage=250V;ScreenVoltage=100V
Transconductance
3800 uS
PlateVoltage=250V;ScreenVoltage=100V
Plate resistance
1 Mohm
PlateVoltage=250V;ScreenVoltage=100V
Plate current
9 mA
PlateVoltage=250V;ScreenVoltage=80V
Screen current
2.7 mA
PlateVoltage=250V;ScreenVoltage=80V
Transconductance
4500 uS
PlateVoltage=250V;ScreenVoltage=80V
Plate resistance
0.9 Mohm
PlateVoltage=250V;ScreenVoltage=80V
Plate current
11 mA
PlateVoltage=200V;ScreenVoltage=100V
Screen current
3.3 mA
PlateVoltage=200V;ScreenVoltage=100V
Transconductance
4500 uS
PlateVoltage=200V;ScreenVoltage=100V
Plate resistance
0.6 Mohm
PlateVoltage=200V;ScreenVoltage=100V
Plate current
12 mA
PlateVoltage=170V;ScreenVoltage=100V
Screen current
4 mA
PlateVoltage=170V;ScreenVoltage=100V
Transconductance
5000 uS
PlateVoltage=170V;ScreenVoltage=100V
Plate resistance
0.4 Mohm
PlateVoltage=170V;ScreenVoltage=100V
Maximum plate voltage
300 V
Maximum plate dissipation
2.25 W
Plate output capacitance
5.2 pF
Grid input capacitance
5 pF
Plate-grid capacitance maximum
0.0025 pF
Maximum diode current
0.8 mA
Maximum diode peak current
5 mA